A4T 75 Search Results

smd A4t

Abstract: DIODE smd marking A4t A4t smd diode a4t transistor A4t 85 MARKING A4T A4t diode smd diode A4T smd marking a4t transistor A4t
Contextual Info: Diodes SMD Type High-Speed Double Diode Array BAV70S SOT-363 Unit: mm +0.1 1.3-0.1 0.65 +0.15 2.3-0.15 Small plastic SMD package +0.1 1.25-0.1 0.525 Features 0.36 High switching speed: max. 4 ns Continuous reverse voltage:max. 75 V +0.05 0.1-0.02 0.1max +0.1

smd a4t

Abstract: A4t diode marking A4t DIODE smd marking A4t
Contextual Info: Product specification BAV70S SOT-363 Unit: mm +0.1 1.3-0.1 0.65 +0.15 2.3-0.15 Small plastic SMD package +0.1 1.25-0.1 0.525 Features 0.36 High switching speed: max. 4 ns +0.1 0.3-0.1 +0.1 2.1-0.1 Repetitive peak reverse voltage:max. 85 V +0.05 0.1-0.02 0.1max

2SC517

Abstract: A4t 01 a4t 85 FM Tranceiver
Contextual Info: 3T DÌJjim7aSG_DGDlflSa T |~~ TO S H I B A { D I S C R E T E / O P T O ! 39C 0 1 8 5 2 SEMICONDUCTOR 3Í <£ 2SC517 i ^ a V N P N x t f ^ + i'T A -* 7 V — j TECHNICAL DATA O VHF * « tl Ü T ~ 3 > 3 'O l te ffl o VHF Power A m p lifier A p p lic a tio n s

DIODE smd marking A4t

Abstract: smd marking code A4t smd a4t A4t smd MSA370 DIODE smd marking A4 SOT363 diode a4t A4t diode smd code A4t marking A4t
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MBD128 BAV70S High-speed double diode array Product specification Supersedes data of 1997 Aug 27 File under Discrete Semiconductors, SC01 1997 Oct 21 Philips Semiconductors Product specification High-speed double diode array

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EIA-449

Contextual Info: Ul IN T E G R A T E D C IR C U IT S UCC5305 U N IT R Q D E ADVANCED INFORMATION Synchronous Modem Control Transceiver FEATURES DESCRIPTION • Modem Interface Transceiver, 4 Drivers and 6 Receivers Switch, 2 Drivers and 2 Receivers EIA232E/ EIA423A/CCITT V.28/V.10 Only

transistor A4t

Abstract: transistor A4t 45 transistor A4t 35 transistor A4t 16
Contextual Info: ï éoJm RAfITRON CORP 33E D 755SD15 aGOQG71 □ FMx 1208FRAM Memory r ^ M 4,096-Bit Nonvolatile Ferroelectric RAM Engineering Evaluation Unit* T R ü N v Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512w x 8b ■ CMOS Technology with Integrated Ferroelectric

Contextual Info: DATA SHEET f V BIPOLAR ANALOG INTEGRATED CIRCUITS ^ P C 1 1 0 0 ,^ P C 1 1 5 0 DUAL S W IT C H IN G REGULATOR CONTROL C IR C U IT DESCRIPTION The ¿uPC1100, ¿ PC1150 are PWM type dual switching regulator control circuits which incorporate 2.5 V voltage reference,

Contextual Info: SN74ALVCHR162269 12-BIT TO 24-BIT REGISTERED BUS EXCHANGER WITH 3-STATE OUTPUTS SC ES050- AUGUST 1995 □GG OR DL PACKAGE TOP VIEW • Member of the Texas Instruments Widebus Family • EPIC™ (Enhanced-Performance Implanted CMOS) Submicron Process • ESD Protection Exceeds 2000 V Per

lm 4194

Contextual Info: TMS27C040 4194 304-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC040 4194 304-BIT PROGRAMMABLE READ-ONLY MEMORY SMLSO4OD-NOVEMBER 1990-REVISED JANUARY 1993 TMS27C040 J PACKAGE+ TOP VIEW Organization . . . 512K x 8 Single 5-V Power Supply Industry Standard 32-Pin Dual In-Line

WF512K8-XCXB

Abstract: WF256K8
Contextual Info: UH ITE M ICRO ELECTRO N ICS 5V FLASH MODULE PRELIMINARY WF256K8, WF512K8-XCX5 * FEATURES • Access Tim es of 60, 70, 90 and 150nS ■ 5 V o lt Programm ing; 5V ±10% Supply ■ 32 pin Ceram ic DIP, JEDEC approved Package 300 ■ Low Power CM OS ■ Organized as 256K x 8 and 512K x 8

TL783C

Abstract: adjustable regulator high voltage TL783Y TL783 TL783CKC
Contextual Info: TL783C TL783Y HIGH-VOLTAGE ADJUSTABLE REGULATORS _ , SLVSQ36B - SEPTEMBER 1 9 B 1 -R E V IS E D AUGUST 1995 • Output Adjustable From 1.25 V to 125 V When Used With an External Resistor Divider • 700-mA Output Current • Full Short-Circuit, Safe-Operating-Area, and

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

mark a4t

Contextual Info: MP3274 Fault Protected 32 Channel, 12-Bit Data Acquisition Subsystem Z ” E X A R FEATURES • Complete 32-Channel 12-Bit A/D Converter with Sample & Hold, Reference, Clock and 3-State Outputs • Fast Conversion, less than 15|xS • Microprocessor Bus Interface

Contextual Info: KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Perform ance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

EB 13007

Abstract: fAr-f5cc SAA 1025 sz 13886 F5CC-888M50-L2CA FAR-F5CC-881M50-L2AB 40527 marking 41R3 d0117 h1d marking
Contextual Info: cP DS04-23108-3E DATA SHEET FUJITSU ASSP PIEZOELECTRIC SAW BPF F5 SERIES L2 Type SAW BANDPASS FILTER (700 to 1000 MHz) DESCRIPTION F5 series are wideband bandpass filters for use in the 700MHz to 1000MHz of frequency range. F5 series uses a single lithium tantalate piezoelectric crystal (LiTaOa) that has large electromechanical coupling

74ls86n

Abstract: 74ls138n 74LS155N 74ls173n 74LS153N 74LS75N CD 8227 IC TTL 74LS153N 74LS158N 74LS161N
Contextual Info: S ig n e tic s Integrated C ircuits - Low Power S chottky T T L R EFERENCE T A B L E TYPE NO. D E S C R IP T IO N STOCK NO. N 7 4LS 51N N 7 4LS 54N N74LS 55N N 7 4LS 73N N 7 4LS 74N D u a l 2 -W id e 2 - I n p u t A O I G a te 4 -W id e 2 - I n p u t A O I G ate

A4t 75

Abstract: 32D532
Contextual Info: 9 SILICON SYSTEMS INC SflE D 0253^5 T S 2 -3 > S > 0003^51= 3 SSI 32D538 ¿émMknts Data Synchronizer/ 2, 7 RLL ENDEC Advance Information October, 1989 DESCRIPTION FEATURES The SSI 32D538 Data Synchronizer/ 2,7 RLL ENDEC provides data recovery and data encoding for storage

33D10

Abstract: A4t 3m 3 pin DDD22 S2042B-05 1010 OEI YAT-6
Contextual Info: PRELIMINARY DEVICE SPECIFICATION >9MCC HIGH PERFORMANCE SERIAL INTERFACE CIRCUITS FEATURES • Functionally compliant with ANSI X3T11 Fibre Channel physical and transmission protocol standards • S2042 transmitter incorporates phase-locked loop PLL providing clock synthesis from lowspeed reference

ISO10373-6

Abstract: ISO14443-2 transistor A4t 46 ISO14443 ISO14443-3 SR176 ctype.h ST 2864 EEPROM T0128
Contextual Info: SR176 13.56MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64 bits Unique ID FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ISO 14443 - 2 Type B Air Interface Compliant ISO 14443 - 3 Type B Frame Format Compliant 13.56MHz Carrier Frequency

tda 7188

Abstract: tda 7182 32c9001 d0117
Contextual Info: SSI 32C9302 ¿ ilm s iis k m PC-AT Combo Controller Reed Solomon, 3.3V Operation s A TDK Group#Company Advance Information December 1993 DESCRIPTION FEATURES The SSI 32C9302 is an advanced CMOS VLSI device which integrates major portions of the hardware needed to build an ATA disk drive. The SSI 32C9302

Contextual Info: EGJ DD-03296 IL C D A r A D E V IC E R A T IO N _ 96-CHANNEL DISCRETE-TO-DIGITAL INTERFACE "R O D S " FEATURES DESCRIPTION APPLICATIONS • HIRF Layer The DD-03296 device is a 96-channel discrete-to-digital interface with uni­ versal HIRF-isolated inputs to handle

ISO10373-6

Abstract: transistor A4t 46 ISO14443-2 CRX14 ISO14443 ISO14443-3 13.56MHz antenna design
Contextual Info: SRI4K 13.56MHz Short Range Contactless Memory Chip with 4096 bit EEPROM and Anti-Collision Functions FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ISO 14443 - 2 Type B Air Interface Compliant ISO 14443 - 3 Type B Frame Format

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S 16165L , 4 2 16 16 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The /iP D 42S 16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynam ic RAMs with optional hyper page