A4T 65 Search Results

smd a4t

Abstract: A4t diode marking A4t DIODE smd marking A4t
Contextual Info: Product specification BAV70S SOT-363 Unit: mm +0.1 1.3-0.1 0.65 +0.15 2.3-0.15 Small plastic SMD package +0.1 1.25-0.1 0.525 Features 0.36 High switching speed: max. 4 ns +0.1 0.3-0.1 +0.1 2.1-0.1 Repetitive peak reverse voltage:max. 85 V +0.05 0.1-0.02 0.1max

smd A4t

Abstract: DIODE smd marking A4t A4t smd diode a4t transistor A4t 85 MARKING A4T A4t diode smd diode A4T smd marking a4t transistor A4t
Contextual Info: Diodes SMD Type High-Speed Double Diode Array BAV70S SOT-363 Unit: mm +0.1 1.3-0.1 0.65 +0.15 2.3-0.15 Small plastic SMD package +0.1 1.25-0.1 0.525 Features 0.36 High switching speed: max. 4 ns Continuous reverse voltage:max. 75 V +0.05 0.1-0.02 0.1max +0.1

DIODE smd marking A4t

Abstract: smd marking code A4t smd a4t A4t smd MSA370 DIODE smd marking A4 SOT363 diode a4t A4t diode smd code A4t marking A4t
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MBD128 BAV70S High-speed double diode array Product specification Supersedes data of 1997 Aug 27 File under Discrete Semiconductors, SC01 1997 Oct 21 Philips Semiconductors Product specification High-speed double diode array

CRX14

Contextual Info: SRIX4K 13.56MHz Short Range Contactless Memory Chip With 4096 bit EEPROM, Anti-Collision and Anti-Clone Functions DATA BRIEFING FEATURES SUMMARY • ISO 14443 - 2 Type B Air Interface Compliant ■ ISO 14443 - 3 Type B Frame Format Compliant ■ 13.56MHz Carrier Frequency

a2232

Abstract: A-2232 TI AIH 2SK1552-01 155201
Contextual Info: 2SK1552-01 L,S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -II S E R IE S • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • \'r<ss= ±30V Guarantee • Avalanche-proof

EIA-449

Contextual Info: Ul IN T E G R A T E D C IR C U IT S UCC5305 U N IT R Q D E ADVANCED INFORMATION Synchronous Modem Control Transceiver FEATURES DESCRIPTION • Modem Interface Transceiver, 4 Drivers and 6 Receivers Switch, 2 Drivers and 2 Receivers EIA232E/ EIA423A/CCITT V.28/V.10 Only

Contextual Info: MICRON TECHNOLOGY INC 3fiE D b l U S M T D0027ÖS fi BiflRN m T -M -ii-o Ç t [iUiiW 4K X 4 SRAM SRAM WITH SEPARATE INPUTS AND OUTPUTS FEATURES PIN ASSIGNMENT Top View « High speed: 12,15,20,25,30 and 35ns • High-performance, low-power, CMOS double metal

JRC 2355

Abstract: PWM Power Control Circuit APAA NJM2355 dead time control
Contextual Info: U b ò NJM2355 3 TW O OUTPUT HIGH VOLTAGE SWITCHING REGULATOR • GENERAL DESCRIPTION ■ PACKAGE OUTLINE New JRC's high voltage switching regulator, NJM2355, is a mono­ lithic high voltage 50V max operation integrated circuit consisting of two channel PWM controlers.

RW02

Contextual Info: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 8 advanced high-speed CMOS static RAM • Equal access and cycle times — Military: 15/20/25ns — Commercial: 12/15/20/25ns • One Chip Select plus one Output Enable pin

Contextual Info: QS7244A High-Speed CMOS 4K x 9 Clocked FIFO with Output Enable Q QS7244A FEATURES/BENEFITS • • • • • • Clocked interface FIFOs for high-speed systems Data and flags change on rising edge of clocks Fully asynchronous read and write TTL compatible input and output levels

Contextual Info: DATA SHEET f V BIPOLAR ANALOG INTEGRATED CIRCUITS ^ P C 1 1 0 0 ,^ P C 1 1 5 0 DUAL S W IT C H IN G REGULATOR CONTROL C IR C U IT DESCRIPTION The ¿uPC1100, ¿ PC1150 are PWM type dual switching regulator control circuits which incorporate 2.5 V voltage reference,

Contextual Info: SN74ALVCHR162269 12-BIT TO 24-BIT REGISTERED BUS EXCHANGER WITH 3-STATE OUTPUTS SC ES050- AUGUST 1995 □GG OR DL PACKAGE TOP VIEW • Member of the Texas Instruments Widebus Family • EPIC™ (Enhanced-Performance Implanted CMOS) Submicron Process • ESD Protection Exceeds 2000 V Per

Contextual Info: SONY C X A 1741Q IF Amplifier for Analog Cellular Communications Description The CXA1741Q is an analog cellular TACS/ NTACS FM IF 1C which incorporates an IF filter. Features • Incorporates a ceramic filter function, which is normally mounted externally.

Contextual Info: Features • Fast Read Access Time - 70 ns • Low Power CMOS Operation 100 |^A max. Standby 30 mA max. Active at 5 MHz • JEDEC Standard Packages 32-Lead 600-mii PDIP 32-Lead 450-mil SOIC SOP 32-Lead PLCC 32-Lead TSOP • 5 V ± 10% Supply • High Reliability CMOS Technology

WF512K8-XCXB

Abstract: WF256K8
Contextual Info: UH ITE M ICRO ELECTRO N ICS 5V FLASH MODULE PRELIMINARY WF256K8, WF512K8-XCX5 * FEATURES • Access Tim es of 60, 70, 90 and 150nS ■ 5 V o lt Programm ing; 5V ±10% Supply ■ 32 pin Ceram ic DIP, JEDEC approved Package 300 ■ Low Power CM OS ■ Organized as 256K x 8 and 512K x 8

AT2*C257

Contextual Info: AT29C257 Features • • • • • • • • • • • • Fast Read Access Tim e - 70 ns 5-Volt-Only Reprogramming Page Program Operation Single Cycle Reprogram Erase and Program Internal Address and Data Latches for 64-Bytes Internal Program Control and Timer

TL783C

Abstract: adjustable regulator high voltage TL783Y TL783 TL783CKC
Contextual Info: TL783C TL783Y HIGH-VOLTAGE ADJUSTABLE REGULATORS _ , SLVSQ36B - SEPTEMBER 1 9 B 1 -R E V IS E D AUGUST 1995 • Output Adjustable From 1.25 V to 125 V When Used With an External Resistor Divider • 700-mA Output Current • Full Short-Circuit, Safe-Operating-Area, and

Contextual Info: AT29C1024 Features Fast Read Access Tim e - 70 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram Erase and Program 512 Sectors (128 words/sector) Internal Address and Data Latches for 128 Words Internal Program Control and Timer

ZD 103 ma

Contextual Info: Features • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 70 ns Internal Program Control and Timer 8K word Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Word By Word Programming -1 0 ^s/Word Typical Hardware Data Protection

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

mark a4t

Contextual Info: MP3274 Fault Protected 32 Channel, 12-Bit Data Acquisition Subsystem Z ” E X A R FEATURES • Complete 32-Channel 12-Bit A/D Converter with Sample & Hold, Reference, Clock and 3-State Outputs • Fast Conversion, less than 15|xS • Microprocessor Bus Interface

Contextual Info: Features Single Voltage for Read and Write: 2.7V to 3.6V BV , 3.0V to 3.6V (LV) Fast Read Access Time -120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Chip Erase Cycle Time -1 0 seconds Byte-by-Byte Programming - 30 |is/Byte Typical

IC 810 audio Power Amplifier

Abstract: audio amplifier IC 810 810 audio amplifier snubber design audio amplifier AN-450 LM4860 LM4860M M16A 77cl 9km-10
Contextual Info: National August 1994 Semiconductor LM 4860 Boom er Audio Power Amplifier Series 1W Audio P ow er A m plifier w ith Shutdow n M ode General Description Key Specifications The LM4860 is a bridge-connected audio power amplifier capable of delivering 1W of continuous average power to an

Contextual Info: KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Perform ance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications