A475 C Search Results

a564 transistor

Abstract: transistor a564 a684 transistor transistor a684 J476 series cx 20015 A564 transistor datasheet B565 A224 K277
Contextual Info: TANTALUM DIPPED / RADIAL — POLAR PERFORMANCE CHARACTERISTICS • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10% standard. • DISSIPATION FACTOR: Maximum DF limits are shown in corresponding series part number listings. See Application Notes Section, page 76 for

j336

Abstract: SY7-1A476M-RB SY5-1A106M-RA J156 SYF-1A106M-RP J476 J475 SY2-1A685M-RB MARKING A106 capacitor Marking J336
Contextual Info: Tantalum Chip Capacitors SY „ Standard Ratings Rated voltage v 6.3V Rated Voltage : 6.3V Capacitance Marking EIA (µF)(120Hz) (P, A2, A) size Code 1.5 JE 1.5 J155 2.2 JJ 2.2 J225 2.2 2012 Size symbol Series code Tangent of the loss angle (less)(120Hz,20℃)

kss 120c

Abstract: A47-50K-S A475 a475 C clarostat swe Clarostat type J SWE-20 CLAROSTAT 470 CLAROSTAT A47
Contextual Info: Series 4 70 and A 4 7 Series 4 7 0 and A 4 7 Electrical Specifications Panel Monnl 0.5 W alt, T h ic k -F ilm . C o n d l i et i v e - P i a s l i c P o t e n t i d m e t e re r Resistance Range 150il to 5 M egohms linear; 1KQ to 2.5 Megohms tapered. Resistance Tolerance

a564 transistor

Abstract: a124 335 35K c3953 cx 20015 a a335 a684 transistor transistor a564 K277 capacitor 106 35K
Contextual Info: TANTALUM DIPPED / RADIAL — POLAR PERFORMANCE CHARACTERISTICS • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10% standard. • DISSIPATION FACTOR: Maximum DF limits are shown in corresponding series part number listings. See Application Notes Section, page 76 for

a476

Abstract: T3D DIODE ESAC87M-009 ESAC87M-009H6A esac87
Contextual Info: ESAC87M-009H6A v 'a 'y M 1— s< t —K SCHOTTKY BARRIER DIODE • f t # I Features Insulated package by fully m o ld in g . • te V F IWS&fft Low V f Connection Diagram Super high speed sw itchin g. H igh reliability by planer design. : Applications H igh speed pow er sw itchin g.

a564 transistor

Abstract: transistor a564 335 35K T35 diode A564 transistor datasheet B565 K186 F5653 A564 a684 transistor
Contextual Info: KEMET TANTALUM DIPPED / RADIAL - POLAR T350, T351, T352, T353, T354, T355 & T356 SERIES “ULTRADIP II” The KEMET ‘UltraDip II’ Capacitors offer the designer of quality instruments and entertainment systems the widely recognized advantages inherent in solid tantalum capacitors at competitive

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 1414-15L PRELIMINARY Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 30.0 dBm, Single Carrier Level • High power - PldB = 42.0 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz

A475 DIODE

Abstract: a476 A475 a475 C ESAC87M-009 T151 T460 T760 T810
Contextual Info: E S A C 8 7 M - 0 0 9 n 6A '>3'yHr—s< V T ÿ ' f ï —K SCHOTTKY BARRIER DIOC • f t # : Features Insulated package by fully m olding. • ftV p m um &m Connection Diagram Low VF Super high speed switching. High reliability by planer design. r- W c

Contextual Info: IIM II R B September 1989 HM 65664 DATASHEET 8 Kx8 ULTIMATE CMOS SRAM FEATURES . . . ACCESS TIME MILITARY/INDUSTRIAL : 45/55 ns max COMMERCIAL : 35/45 ns (max) VERY LOW POWER CONSUMPTION ACTIVE : 175.0 mW (typ) STANDBY : 2.0 |iW (typ) DATA RETENTION : 0.8 nW (typ)

SY7-1A476M-RB

Abstract: SY6-1C106M-RA SY1-1V104M-RA SY1-1C105M-RA SY5-1A106M-RA Elna ce 105 SY4-1C106M-RB SY4-1E225M-RA elna RA2 SY5-1C476M-RC
Contextual Info: Specifications, Dimension Table TANTALUM CHIP CAPACITORS CHIPCON Specifications Item Performance Category temperature range (˚C) −55 to +125 (Above 85˚C use category voltage) Leakage current (µA) See standard ratings table Tolerance at rated capacitance (%)

HM65664

Contextual Info: 4R E 5ôf c . ûM5b D QDD1D71 ^Q^ •MflHS Septem ber 1990 MAT RA M H S HM 65664 DATA SHEET 8 Kx8 ULTIMATE CMOS SRAM FEATURES 300 AND 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME GATED INPUTS : NO PULL-UP/DOWN

A11RC

Contextual Info: TOSHIBA TC5116160AJ/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 16 bit. The TC5116160AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

MDM 6600

Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Contextual Info: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1

TC5116160

Abstract: A461
Contextual Info: T O S H IB A TC5116160AI/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynam ic RAM organized 1,048,576 w ord by 16 bit. The TC5116160AJ/AFT utilizes T oshiba's CM OS silicon gate process technology as well as advanced circuit

TC511665

Abstract: TC511665BZ TC511665BJ ZIP40 TC5116
Contextual Info: T C 5 1 1 6 6 5 B J /B Z - 8 0 . T C 5 1 1 T E N T A T IV E D A T A 6 5 ,5 3 6 W O R D x 16 B IT D Y N A M IC R A M D E SC R IP TIO N The TC511665BJ/BZ is the new generation dynamic KAM organized 65,536 words by 16 bits. _ The TC511665BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit

Contextual Info: Tantalum Surface Mount Capacitors – Automotive T495 Surge Robust Low ESR MnO2 Series Overview The low ESR, surge-robust T495 Automotive Series is designed for demanding applications that require high surge current and high ripple current capability. This series builds upon the proven

Contextual Info: * T h is a re is advanced s u b je c t to in fo rm a tio n change w ith o u t and specifications notice. 1 , 0 4 8 , 5 7 6 W O R D x 4 BIT D Y N A M I C R A M DESCRIPTION The TC514410J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as

B824 transistor

Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

TANTALUM capacitor 685 35K

Abstract: 335 35K 685k 100v capacitor a564 transistor capacitor 336 35K 102 capacitor 226 35K 022 electrolytic cat 7199 ca K277 capacitor 685 35K 106 16k
Contextual Info: F-3100C 5/99 KEMET CAPACITORS Parts shown are actual size KEMET also manufactures Ceramic Leaded, and Surface Mount Capacitors — Tantalum and Ceramic. Refer to Catalog F-3101 — Ceramic Leaded, and F-3102 — Surface Mount Capacitors for detailed information on these products. GR500

a564 transistor

Abstract: a684 transistor cat 7199 ca transistor a564 capacitor 226 35K 022 electrolytic transistor a684 A564 transistor datasheet up board exam date sheet 2012 D5653 B824 transistor
Contextual Info: TANTALUM LEADED CAPACITORS To find parts fast, visit at www.kemet.com. F-3100D 09/01 KEMET CAPACITORS Parts shown are actual size Due to ever changing technology, all series may not be depicted. Kemet Electronics Corporation P.O. Box 5928 • Greenville, SC 29606 • Tel: 864-963-6300

WV-103

Abstract: Z80 application note dynamic ram
Contextual Info: * This is advanced information a n d s p e cifications are subject to change w i t h o u t notice. 1,048,576 W O R D x 4 BIT DYNAMIC RAM DESCRIPTION T h e T C 5 1 4 4 1 0 J / Z is the n e w g e n e r a t i o n dynamic R A M o r g anized 1 , 0 4 8 , 5 7 6 w o r d s by 4

smd diode J476

Abstract: LP5 ELNA diode sy 170/2 smd J476 RJ3 Elna SYF-1A335M-RJ ELNA RE2 DCK-3R3E224U-E 10 micro farad 25 v electrolytic capacitor 22 35L CAPacitor
Contextual Info: TECHNICAL NOTETECHNICAL NOTE Certifications of of Quality Quality Management ManagementSystem System as (asofofJun. Jun.2007 2006) Certifications (Malaysia) ELNA-LELON ELECTRONICS (SUZHOU)ELECTRONICS CO., LTD. ELNA-LELON (China) (SUZHOU) CO., LTD. (China)

sysmac s6 cpu 15

Abstract: sysmac s6 omron cv500-PS221 omron C60k cables pin diagram
Contextual Info: SYSMAC CV-series CV500/CV1000/CV2000/CVM1 Programmable Controllers Operation Manual: Ladder Diagrams Revised August 1998 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator and only for the purposes described in this manual.

DDI 0100E

Abstract: ARMv5TE instruction set ARMv2 a798 ARMv2a ARM600 ARMv5T 82C482 datasheet arm1 microprocessor ARM9E-S
Contextual Info: ARM Architecture Reference Manual ARM DDI 0100E Copyright 1996-2000 ARM Limited. All rights reserved. Copyright © 1996–2000 ARM Limited. All rights reserved. Release Information The following changes have been made to this document. Change History Date