A475 C Search Results

a564 transistor

Abstract: transistor a564 a684 transistor transistor a684 J476 series cx 20015 A564 transistor datasheet B565 A224 K277
Contextual Info: TANTALUM DIPPED / RADIAL — POLAR PERFORMANCE CHARACTERISTICS • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10% standard. • DISSIPATION FACTOR: Maximum DF limits are shown in corresponding series part number listings. See Application Notes Section, page 76 for

a564 transistor

Abstract: a124 335 35K c3953 cx 20015 a a335 a684 transistor transistor a564 K277 capacitor 106 35K
Contextual Info: TANTALUM DIPPED / RADIAL — POLAR PERFORMANCE CHARACTERISTICS • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10% standard. • DISSIPATION FACTOR: Maximum DF limits are shown in corresponding series part number listings. See Application Notes Section, page 76 for

a564 transistor

Abstract: transistor a564 335 35K T35 diode A564 transistor datasheet B565 K186 F5653 A564 a684 transistor
Contextual Info: KEMET TANTALUM DIPPED / RADIAL - POLAR T350, T351, T352, T353, T354, T355 & T356 SERIES “ULTRADIP II” The KEMET ‘UltraDip II’ Capacitors offer the designer of quality instruments and entertainment systems the widely recognized advantages inherent in solid tantalum capacitors at competitive

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 1414-15L PRELIMINARY Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 30.0 dBm, Single Carrier Level • High power - PldB = 42.0 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz

A475 DIODE

Abstract: a476 A475 a475 C ESAC87M-009 T151 T460 T760 T810
Contextual Info: E S A C 8 7 M - 0 0 9 n 6A '>3'yHr—s< V T ÿ ' f ï —K SCHOTTKY BARRIER DIOC • f t # : Features Insulated package by fully m olding. • ftV p m um &m Connection Diagram Low VF Super high speed switching. High reliability by planer design. r- W c

Contextual Info: IIM II R B September 1989 HM 65664 DATASHEET 8 Kx8 ULTIMATE CMOS SRAM FEATURES . . . ACCESS TIME MILITARY/INDUSTRIAL : 45/55 ns max COMMERCIAL : 35/45 ns (max) VERY LOW POWER CONSUMPTION ACTIVE : 175.0 mW (typ) STANDBY : 2.0 |iW (typ) DATA RETENTION : 0.8 nW (typ)

A11RC

Contextual Info: TOSHIBA TC5116160AJ/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 16 bit. The TC5116160AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

TC5116160

Abstract: A461
Contextual Info: T O S H IB A TC5116160AI/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynam ic RAM organized 1,048,576 w ord by 16 bit. The TC5116160AJ/AFT utilizes T oshiba's CM OS silicon gate process technology as well as advanced circuit

A47-2000-S

Contextual Info: Series 470 and A47 Electrical Specifications R esistance R ange 1 5 0 ft to 5 M egohm s linear; I K£2 to 2-5 M egohm s tapered. R esistance Tolerance L inear up to SOOKU, ±1 0 % : above 500K12. ±20% . T apers up lo lOOKii; ± 10% ; above I0 0 K U . ±20% .

TC511665

Abstract: TC511665BZ TC511665BJ ZIP40 TC5116
Contextual Info: T C 5 1 1 6 6 5 B J /B Z - 8 0 . T C 5 1 1 T E N T A T IV E D A T A 6 5 ,5 3 6 W O R D x 16 B IT D Y N A M IC R A M D E SC R IP TIO N The TC511665BJ/BZ is the new generation dynamic KAM organized 65,536 words by 16 bits. _ The TC511665BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit

Contextual Info: * T h is a re is advanced s u b je c t to in fo rm a tio n change w ith o u t and specifications notice. 1 , 0 4 8 , 5 7 6 W O R D x 4 BIT D Y N A M I C R A M DESCRIPTION The TC514410J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as

B824 transistor

Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

WV-103

Abstract: Z80 application note dynamic ram
Contextual Info: * This is advanced information a n d s p e cifications are subject to change w i t h o u t notice. 1,048,576 W O R D x 4 BIT DYNAMIC RAM DESCRIPTION T h e T C 5 1 4 4 1 0 J / Z is the n e w g e n e r a t i o n dynamic R A M o r g anized 1 , 0 4 8 , 5 7 6 w o r d s by 4

smd diode J476

Abstract: LP5 ELNA diode sy 170/2 smd J476 RJ3 Elna SYF-1A335M-RJ ELNA RE2 DCK-3R3E224U-E 10 micro farad 25 v electrolytic capacitor 22 35L CAPacitor
Contextual Info: TECHNICAL NOTETECHNICAL NOTE Certifications of of Quality Quality Management ManagementSystem System as (asofofJun. Jun.2007 2006) Certifications (Malaysia) ELNA-LELON ELECTRONICS (SUZHOU)ELECTRONICS CO., LTD. ELNA-LELON (China) (SUZHOU) CO., LTD. (China)

sandisk eMMC 4.41

Abstract: toshiba emmc 4.4 spec SANDISK inand Samsung eMMC 4.41 sandisk emmc 4.5 bcm 4330 programming Guide Sandisk iNAND eMMC toshiba emmc 4.4 linux toshiba emmc 4.4.1 spec sandisk inand extreme emmc
Contextual Info: An addendum for this document is available. See Document ID#: IMX25RMAD. i.MX25 Multimedia Applications Processor Reference Manual Supports i.MX251 MCIMX251 i.MX253 (MCIMX253) i.MX255 (MCIMX255) i.MX257 (MCIMX257) i.MX258 (MCIMX258) IMX25RM Rev. 1 06/2009