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    A475 C Search Results

    A475 C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GRM31CR61A475KA01K
    Murata Manufacturing Co Ltd Ceramic Capacitor, Multilayer, Ceramic, 10V, 10% +Tol, 10% -Tol, X5R, 15% TC, 4.7uF, Surface Mount, 3216M/1206 PDF
    GRM31CR71A475KA01K
    Murata Manufacturing Co Ltd Ceramic Capacitor, Multilayer, Ceramic, 10V, 10% +Tol, 10% -Tol, X7R, 15% TC, 4.7uF, Surface Mount, 3216M/1206 PDF
    KRM55LR72A475KH01K
    Murata Manufacturing Co Ltd Ceramic Capacitor, Multilayer, Ceramic, 100V, 10% +Tol, 10% -Tol, X7R, 15% TC, 4.7uF, Surface Mount, 5750M/2220 PDF
    GRM188B31A475KE15D
    Murata Manufacturing Co Ltd Ceramic Capacitor, Multilayer, Ceramic, 10V, 10% +Tol, 10% -Tol, B, 10% TC, 4.7uF, Surface Mount, 1608M/0603 PDF
    GRM21BC8YA475KE51K
    Murata Manufacturing Co Ltd Ceramic Capacitor, Multilayer, Ceramic, 35V, 10% +Tol, 10% -Tol, X6S, 22% TC, 4.7uF, Surface Mount, 2012M/0805 PDF

    A475 C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    a564 transistor

    Abstract: a124 335 35K c3953 cx 20015 a a335 a684 transistor transistor a564 K277 capacitor 106 35K
    Contextual Info: TANTALUM DIPPED / RADIAL — POLAR PERFORMANCE CHARACTERISTICS • CAPACITANCE TOLERANCE: Available in standard EIA nominal values with ±20% and ±10% standard. • DISSIPATION FACTOR: Maximum DF limits are shown in corresponding series part number listings. See Application Notes Section, page 76 for


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    c-7301c-7301/7303a564 transistora124+8335 35kc3953cx 20015 aa335a684 transistortransistor a564k277capacitor 106 35k PDF

    a564 transistor

    Abstract: transistor a564 335 35K T35 diode A564 transistor datasheet B565 K186 F5653 A564 a684 transistor
    Contextual Info: KEMET TANTALUM DIPPED / RADIAL - POLAR T350, T351, T352, T353, T354, T355 & T356 SERIES “ULTRADIP II” The KEMET ‘UltraDip II’ Capacitors offer the designer of quality instruments and entertainment systems the widely recognized advantages inherent in solid tantalum capacitors at competitive


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    035asa564 transistortransistor a564335 35k+7t35 diodea564 transistor datasheetb565k186f5653a564a684 transistor PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 1414-15L PRELIMINARY Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 30.0 dBm, Single Carrier Level • High power - PldB = 42.0 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz


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    1414-15l-131x-115x-142x+2mw50380196qqee337 PDF

    A475 DIODE

    Abstract: a476 A475 a475 C ESAC87M-009 T151 T460 T760 T810
    Contextual Info: E S A C 8 7 M - 0 0 9 n 6A '>3'yHr—s< V T ÿ ' f ï —K SCHOTTKY BARRIER DIOC • f t # : Features Insulated package by fully m olding. • ftV p m um &m Connection Diagram Low VF Super high speed switching. High reliability by planer design. r- W c


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    esac87m-009h6a500nsfn-tslls19i95t/r89+9a475 diodea476a475a475 cesac87m-009t151t460t760t810 PDF

    TC5116160

    Abstract: A461
    Contextual Info: T O S H IB A TC5116160AI/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynam ic RAM organized 1,048,576 w ord by 16 bit. The TC5116160AJ/AFT utilizes T oshiba's CM OS silicon gate process technology as well as advanced circuit


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    tc5116160ai/aft-60/70/80tc5116160aj/afttc51161610aj/aft-60/70/80a8r--a11r+3tc5u6160aj/aft-60/70/80tc5116160a461 PDF

    TC511665

    Abstract: TC511665BZ TC511665BJ ZIP40 TC5116
    Contextual Info: T C 5 1 1 6 6 5 B J /B Z - 8 0 . T C 5 1 1 T E N T A T IV E D A T A 6 5 ,5 3 6 W O R D x 16 B IT D Y N A M IC R A M D E SC R IP TIO N The TC511665BJ/BZ is the new generation dynamic KAM organized 65,536 words by 16 bits. _ The TC511665BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit


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    tc511665bj/bztc511665tc511665bztc511665bj+2zip40tc5116 PDF

    Contextual Info: * T h is a re is advanced s u b je c t to in fo rm a tio n change w ith o u t and specifications notice. 1 , 0 4 8 , 5 7 6 W O R D x 4 BIT D Y N A M I C R A M DESCRIPTION The TC514410J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as


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    tc514410j/zo-1/03 PDF

    B824 transistor

    Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
    Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information


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    t110/t212csr13mil-prf-39003/1t111/t213+16csr91mil-prf-39003/4csr09mil-prf-39003/2t140/t242csr23b824 transistora564 transistor335 35k106 16kradial capacitorthomson th 5221transistor a564pc 8178t110a335j015asa684 transistor PDF

    WV-103

    Abstract: Z80 application note dynamic ram
    Contextual Info: * This is advanced information a n d s p e cifications are subject to change w i t h o u t notice. 1,048,576 W O R D x 4 BIT DYNAMIC RAM DESCRIPTION T h e T C 5 1 4 4 1 0 J / Z is the n e w g e n e r a t i o n dynamic R A M o r g anized 1 , 0 4 8 , 5 7 6 w o r d s by 4


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    tc51441oj/z-60tc51441oj/z-10wv-103z80 application note dynamic ram PDF

    smd diode J476

    Abstract: LP5 ELNA diode sy 170/2 smd J476 RJ3 Elna SYF-1A335M-RJ ELNA RE2 DCK-3R3E224U-E 10 micro farad 25 v electrolytic capacitor 22 35L CAPacitor
    Contextual Info: TECHNICAL NOTETECHNICAL NOTE Certifications of of Quality Quality Management ManagementSystem System as (asofofJun. Jun.2007 2006) Certifications (Malaysia) ELNA-LELON ELECTRONICS (SUZHOU)ELECTRONICS CO., LTD. ELNA-LELON (China) (SUZHOU) CO., LTD. (China)


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    1f/dzn-2r5d105tiso/ts9001my04/0675t2003ristics+13100ma5v100f2007/2008esmd diode j476lp5 elnadiode sy 170/2smd j476rj3 elnasyf-1a335m-rjelna re2dck-3r3e224u-e10 micro farad 25 v electrolytic capacitor22 35l capacitor PDF

    sandisk eMMC 4.41

    Abstract: toshiba emmc 4.4 spec SANDISK inand Samsung eMMC 4.41 sandisk emmc 4.5 bcm 4330 programming Guide Sandisk iNAND eMMC toshiba emmc 4.4 linux toshiba emmc 4.4.1 spec sandisk inand extreme emmc
    Contextual Info: An addendum for this document is available. See Document ID#: IMX25RMAD. i.MX25 Multimedia Applications Processor Reference Manual Supports i.MX251 MCIMX251 i.MX253 (MCIMX253) i.MX255 (MCIMX255) i.MX257 (MCIMX257) i.MX258 (MCIMX258) IMX25RM Rev. 1 06/2009


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    imx25rmadmx251mcimx251mx253+16mcimx253mx255mcimx255mx257mcimx257mx258sandisk emmc 4.41toshiba emmc 4.4 specsandisk inandsamsung emmc 4.41sandisk emmc 4.5bcm 4330 programming guidesandisk inand emmctoshiba emmc 4.4 linuxtoshiba emmc 4.4.1 specsandisk inand extreme emmc PDF