A475 C Search Results
A475 C Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| GRM31CR61A475KA01K | Murata Manufacturing Co Ltd | Ceramic Capacitor, Multilayer, Ceramic, 10V, 10% +Tol, 10% -Tol, X5R, 15% TC, 4.7uF, Surface Mount, 3216M/1206 | |||
| GRM31CR71A475KA01K | Murata Manufacturing Co Ltd | Ceramic Capacitor, Multilayer, Ceramic, 10V, 10% +Tol, 10% -Tol, X7R, 15% TC, 4.7uF, Surface Mount, 3216M/1206 | |||
| KRM55LR72A475KH01K | Murata Manufacturing Co Ltd | Ceramic Capacitor, Multilayer, Ceramic, 100V, 10% +Tol, 10% -Tol, X7R, 15% TC, 4.7uF, Surface Mount, 5750M/2220 | |||
| GRM188B31A475KE15D | Murata Manufacturing Co Ltd | Ceramic Capacitor, Multilayer, Ceramic, 10V, 10% +Tol, 10% -Tol, B, 10% TC, 4.7uF, Surface Mount, 1608M/0603 | |||
| GRM21BC8YA475KE51K | Murata Manufacturing Co Ltd | Ceramic Capacitor, Multilayer, Ceramic, 35V, 10% +Tol, 10% -Tol, X6S, 22% TC, 4.7uF, Surface Mount, 2012M/0805 |
A475 C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
a564 transistor
Abstract: a124 335 35K c3953 cx 20015 a a335 a684 transistor transistor a564 K277 capacitor 106 35K
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c-7301c-7301/7303a564 transistora124+8 | |
a564 transistor
Abstract: transistor a564 335 35K T35 diode A564 transistor datasheet B565 K186 F5653 A564 a684 transistor
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035asa564 transistortransistor a564335 35k+7 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 1414-15L PRELIMINARY Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 30.0 dBm, Single Carrier Level • High power - PldB = 42.0 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz |
OCR Scan |
1414-15l-131x-115x-142x+2 | |
A475 DIODE
Abstract: a476 A475 a475 C ESAC87M-009 T151 T460 T760 T810
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OCR Scan |
esac87m-009h6a500nsfn-tslls19i95t/r89+9 | |
TC5116160
Abstract: A461
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OCR Scan |
tc5116160ai/aft-60/70/80tc5116160aj/afttc51161610aj/aft-60/70/80a8r--a11r+3 | |
TC511665
Abstract: TC511665BZ TC511665BJ ZIP40 TC5116
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OCR Scan |
tc511665bj/bztc511665tc511665bztc511665bj+2 | |
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Contextual Info: * T h is a re is advanced s u b je c t to in fo rm a tio n change w ith o u t and specifications notice. 1 , 0 4 8 , 5 7 6 W O R D x 4 BIT D Y N A M I C R A M DESCRIPTION The TC514410J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as |
OCR Scan |
tc514410j/zo-1/03 | |
B824 transistor
Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
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t110/t212csr13mil-prf-39003/1t111/t213+16 | |
WV-103
Abstract: Z80 application note dynamic ram
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OCR Scan |
tc51441oj/z-60tc51441oj/z-10wv-103z80 application note dynamic ram | |
smd diode J476
Abstract: LP5 ELNA diode sy 170/2 smd J476 RJ3 Elna SYF-1A335M-RJ ELNA RE2 DCK-3R3E224U-E 10 micro farad 25 v electrolytic capacitor 22 35L CAPacitor
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1f/dzn-2r5d105tiso/ts9001my04/0675t2003ristics+13 | |
sandisk eMMC 4.41
Abstract: toshiba emmc 4.4 spec SANDISK inand Samsung eMMC 4.41 sandisk emmc 4.5 bcm 4330 programming Guide Sandisk iNAND eMMC toshiba emmc 4.4 linux toshiba emmc 4.4.1 spec sandisk inand extreme emmc
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imx25rmadmx251mcimx251mx253+16 |