A3 DIODE Search Results

Contextual Info: www.fairchildsemi.com K A3 8 4 2 B/K A3 8 4 3 B/K A3 8 4 4 B/ K A3 8 4 5 B SM PS Cont rolle r Features Description • • • • The KA3842B/KA3843B/KA3844B/KA3845B are fixed frequency current-mode PWM controller. They are specially designed for Off - Line and DC-to-DC converter

SEMIPACK0

Abstract: Semikron 50 04 a3 C3185 9B19 b17 diode skke15 Semikron 60 08 a3 semipack 1
Contextual Info: VRSM VRRM V V 500 700 900 1300 1500 1700 400 600 800 1200 1400 1600 IFRMS maximum values for continuous operation 24 A2); 28 A3) 24 A2); 28 A3) 60 A IFAV (sin. 180; Tcase = 71 °C) 17,5 A3) 17,5 A3) 38 A – SKKD 15/06 SKKD 15/08 SKKD 15/12 SKKD 15/14 SKKD 15/16

Contextual Info: Laser Diodes Ant Series- 9x× nm High Brightness Laser Diode BLD-91-tt-30W-A3-F-10-c-l-22 BLD-94-tt-30W-A3-F-10-c-l-22 BLD-98-tt-30W-A3-F-10-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and

diode 14512 H

Contextual Info: Li IXYS Mil 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IGBT Modules lC25 = 160 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^CE sat typ. = ^ Mil MID I Ir 7C ^J 6 0 -+ ^ MDI I 11 l. o1 M : : ^ l iïjÔ jj E 72873 Preliminary data Symbol Conditions Maximum Ratings

Contextual Info: Li IXYS Mil 75-12 A3 MID 75-12 A3 MDI 75-12 A3 IGBT Modules lC25 = 90 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^ C E s a t typ. = Mil MID I Ir 7C ^J 6 0 -+ ^ MDI I 11 l. o1 M : : ^ ^ l iïjÔ jj E 72873 Preliminary data Symbol Conditions

IXYS DS 145

Abstract: diode 14512 H
Contextual Info: ÖIXYS Mil 145*12 A3 MIO 145*12 A3 U m 145-12 A3 IGBT M odules lC25 = 160 A Short Circuit SOA Capability Square RBSOA ^ ces ” ^ ^ C E s a t t yP. = M il MID I ^ ^-2 V MDI E' : : 60—I- isÖL • i : E 72873 P relim in ary data S ym bo l C o n d itio n s

E72873

Abstract: 0443k ic equivalent MID 400
Contextual Info: MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IC25 = 160 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 7 6 3 4 5 2 MDI 1 1 3 4 5 Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW

Contextual Info: OIXYS MH 75-12 A3 IGBT Modules ^C25 V CES V CE sat typ. Short Circuit SOA Capability Square RBSOA MID MID 75-12 A3 MDI 75*12 A3 90 A 1200 V 2.2 V MDI E 72873 Preliminary data Symbol Conditions Maximum Ratings V qeS VCGR Tj = 25°C to 150°C 1200 V Tj = 25°C to 150°C; RGE = 20 k il

0443k

Abstract: E72873 ic equivalent MID 400 MDI11
Contextual Info: MII 100-12 A3 MID 100-12 A3 MDI 100-12 A3 IC25 = 135 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 7 6 3 4 5 2 MDI 1 1 3 4 5 Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW

Contextual Info: se MIKROn zurück V rsm V rrm Ifrms maximum value for continuous operation 24 A2*; 28 A3> 24 A2*; 28 A3> Ifav sin. 180; Tcase = 7 17,5 A3> 60 A SEMIPACK 0 SKKD 15 SKKE 15 38 A SEMIPACK® 1 SKKD 26 °C) V V 500 400 S K K E 15/04 - 700 600 S K K D 15/06

MII 75-12 A3

Abstract: ixys 75-12 A3 DIODE E72873 TR 7512
Contextual Info: MII 75-12 A3 MID 75-12 A3 MDI 75-12 A3 IC25 = 90 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 7 6 3 4 5 2 MDI 1 1 3 4 5 Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW

TS 100-12

Contextual Info: ÖIXYS MH 100*12 A3 MIO 100*12 A3 Um 100-12 A3 IGBT M odules lC25 = 135 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^ C E s a t t yP. = M il MID I ^ ^-2 V MDI E' : : 60—I- • i : E 72873 P relim in ary data S ym bo l C o n d itio n s M ax im u m R atin g s

C2C36

Abstract: VPW09197 BAS21U SC74
Contextual Info: BAS21U Silicon Switching Diode Array 5 4 6
For high-speed switching applications
Internal galvanic isolated diodes 3 2 in one package 1 VPW09197 C1 C2 C3 6 5 4 1 2 3 A1 A2 A3 EHA07291 Type BAS21U Marking Pin Configuration Package JSs 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74

marking 6c1

Abstract: BAS16U SC74
Contextual Info: BAS16U Silicon Switching Diode Array 5
For high-speed switching applications 4 6
Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74

Contextual Info: MCO 150 Single Thyristor Module ITRMS = 234 A VRRM = 1200-1600 V ITAV = 149 A Preliminary data VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 G1 K2/4 Type miniBLOC, SOT-227 B K2 G1 MCO 150-12io1 MCO 150-16io1 A3 K4 A3 Symbol Test Conditions ITRMS ITAV TVJ = TVJM

SN74LS85

Abstract: SN74LS85D SN74LS85N on semiconductor diode b-14
Contextual Info: SN74LS85 4-Bit Magnitude Comparator The SN74LS85 is a 4-Bit Magnitude Camparator which compares two 4-bit words A, B , each word having four Parallel Inputs (A0 – A3, B0 – B3); A3, B3 being the most significant inputs. Operation is not restricted to binary codes, the device will work with any

Contextual Info: MCO 150 Single Thyristor Module ITRMS = 234 A VRRM = 1200-1600 V ITAV = 149 A Preliminary data VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 G1 K2/4 Type miniBLOC, SOT-227 B K2 G1 MCO 150-12io1 MCO 150-16io1 A3 K4 A3 Symbol Test Conditions ITRMS ITAV TVJ = TVJM

Contextual Info: OP A3 OPA 79 OPA379 OPA2379 OPA4379 OPA 4379 2379 www.ti.com . SBOS347D – NOVEMBER 2005 – REVISED MAY 2008

mosfet inverter 2kW 100khz

Contextual Info: OP A3 OPA 79 OPA379 OPA2379 OPA4379 OPA 4379 2379 www.ti.com . SBOS347D – NOVEMBER 2005 – REVISED MAY 2008

TLV27Lx

Contextual Info: OP A3 OPA 79 OPA379 OPA2379 OPA4379 OPA 4379 2379 www.ti.com . SBOS347D – NOVEMBER 2005 – REVISED MAY 2008

OPA2379

Abstract: OPA379 OPA4379 SC70-5 OPA2379AIDCNRG4 80nVHz
Contextual Info: OP A3 OPA 79 OPA379 OPA2379 OPA4379 OPA 4379 2379 www.ti.com . SBOS347D – NOVEMBER 2005 – REVISED MAY 2008

OPA2376

Abstract: OPA376 OPA4376 SC70-5 a2188 marking code FA sot23
Contextual Info: OP A3 76 OPA 2376 OPA376 OPA2376 OPA4376 OPA 4376 www.ti.com . SBOS406C – JUNE 2007 – REVISED OCTOBER 2008

thyristor Itav 60 Itrms 100

Contextual Info: MCO 25 Single Thyristor Module ITRMS = 49 A VRRM = 1200-1600 V ITAV = 31 A Preliminary data VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 G1 K2/4 Type miniBLOC, SOT-227 B K2 G1 MCO 25-12io6 MCO 25-16io6 A3 K4 A3 Symbol Conditions ITRMS ITAV TVJ = TVJM TC = 80°C; 180° sine

single thyristor

Abstract: thyristor Itav 60 Itrms 100
Contextual Info: MCO 75 Single Thyristor Module ITRMS = 121 A VRRM = 1200-1600 V ITAV = 77 A Preliminary data VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 G1 K2/4 Type miniBLOC, SOT-227 B K2 G1 MCO 75-12io6 MCO 75-16io6 A3 K4 A3 Symbol Conditions ITRMS ITAV TVJ = TVJM TC = 80°C; 180° sine