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    A2HB TRANSISTOR Search Results

    A2HB TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    A2HB TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    a2hb transistor

    Abstract: 1000A diode Transistor AC 188 A2HB 20/a2hb transistor
    Contextual Info: MITSUBISHI TRANSISTOR MODULES QM 1000H A-2HB HIGH POWER SWITCHING USE INSULATED TYPE | QM1000HA-2HB • Ic Collector current. • V C EX Collector-emitter voltage. • hFE DC current gain. 10 00A 1000V


    OCR Scan     		1000H QM1000HA-2HB E8Q276 E80271 a2hb transistor 1000A diode Transistor AC 188 A2HB 20/a2hb transistor PDF

    VEB mikroelektronik

    Abstract: Datenblattsammlung mikroelektronik datenblattsammlung U880D A4510D VEB M ik ro e le k tro n ik u880 U7660 Erfurt Mikroelektronik
    Contextual Info: o = in ] S [ h o = ü @ e iB i< b n a r iil- c EÎE' D Â 1b ^ feLÂ 'î l¡ SM /EháLUfi^G e le k t r o n is c h e b g u g t e im n t e •- 2 / S ;■ D A T E N B L A T T S A M M L U N G "Elektronische Bauelemente" Ausgabe 2/88 13 : " N e u e un d w e i t e r e n t w i c k e l t e


    OCR Scan     		PDF