A29 SURFACE Search Results

transistor 13000

Contextual Info: u u U A29-1 / SMA29-1 w 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +22 dBm TYP. ♦ HIGH THIRD ORDER I.P.: +32 dBm (TYP.) Outline Drawings A29-1 Specifications 0.200 (5.08) I I I Characteristics Frequency (Min.)

WJ-A29

Contextual Info: WJ-A29 / SMA29 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +22 dBm TYP. HIGH THIRD ORDER I.P.: +34 dBm (TYP.) WIDE POWER SUPPLY RANGE: +10 T O +18 VOLTS Outline Drawings A29 0.200 (5 08) Specifications’1

WJ-CA29-1

Abstract: WJ-A29-1
Contextual Info: WJ-A29-1 / SMA29-1 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +22 dBm TYP. ♦ HIGH THIRD ORDER I.P.: +32 dBm (TYP.) Outline Drawings A29-1 0.450 n (11.41) ü Specifications * 0.185 ± 0.015 ‘ (4 70 ± 0 38)

CA29-1

Abstract: Ca29 A29-1 SMA29-1
Contextual Info: Cascadable Amplifier 10 to 1500 MHz A29-1/ SMA29-1 V3 Features Product Image • HIGH OUTPUT POWER: +22 dBm TYP. • HIGH THIRD ORDER I.P.: +32 dBm (TYP.) Description The A29-1 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for

SMA29-1

Abstract: ca29 a29 surface A29-1 CA29-1 A29 Series
Contextual Info: A29-1 / SMA29-1 Cascadable Amplifier 10 to 1500 MHz Rev. V3 Features Product Image • HIGH OUTPUT POWER: +22 dBm TYP. • HIGH THIRD ORDER I.P.: +32 dBm (TYP.) Description The A29-1 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for

a29 surface

Abstract: A29-1 CA29-1 SMA29-1
Contextual Info: A29-1/SMA29-1 10 TO 1500 MHz CASCADABLE AMPLIFIER • HIGH OUTPUT POWER: +22 dBm TYP. · HIGH THIRD ORDER I.P.: +32 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency Small Signal Gain (min.) Gain Flatness (max.)

Contextual Info: A29-1/SMA29-1 10 TO 1500 MHz CASCADABLE AMPLIFIER • HIGH OUTPUT POWER: +22 dBm TYP. · HIGH THIRD ORDER I.P.: +32 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency Small Signal Gain (min.) Gain Flatness (max.)

diode b34

Abstract: diode u2 a54 0.01MF AMD C32 CR0805 surface mount transistor A48 surface mount transistor A61 b34 diode B34 motorola sn74ls574
Contextual Info: P3V VIO P2 P1 3 5 6 INTA# 4 TDO 5 6 INTA# PCI_5V 7 X7 7 X10 X50 8 8 TOOL1 B2 TOOL_130 TOOL_130 B3 B4 C51 B5 0.1 B6 C15 0.1 0.1 CC0805 C19 CC0805 CC0805 B8 A27 A28 A29 A30 A31 A32 A33 A34 A35 A36 A37 A38 A39 A40 A41 A42 A43 A44 A45 A46 A47 A48 A49 A50 A51 A52

ZNR 470 D 10

Abstract: ZNR 20 znr 14 k 470 Thyristor+12kV+10+kA
Contextual Info: Technische Information / Technical Information Netz-Thyristor Phase Control Thyristor T 3709 N 02.04 N Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung

Contextual Info: Technische Information / Technical Information Netz-Thyristor Phase Control Thyristor T 3709 N 02.04 N Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung

circuit thyristor

Abstract: thyristor Thyristor 470 A KA 0204 Thyristor+12kV+10+kA
Contextual Info: Technische Information / Technical Information Netz-Thyristor Phase Control Thyristor T 3709 N 02.04 N Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung

Contextual Info: Technische Information / Technical Information Netz-Thyristor Phase Control Thyristor T 3709 N 02.04 N Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung

Contextual Info: RT9161/A 300/500mA Low Dropout Linear Voltage Regulator General Description Features The RT9161/A is a 300/500mA fixed output voltage low dropout linear regulator. Typical ground current is approximately 110 A, from zero to maximum loading conditions. Wide range of available output voltage fits most

T388N

Contextual Info: Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor T388N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max enndaten

sma 42056

Abstract: sm 42056 A25 SMD SMD L31 A27 smd A29 SMD g31 motherboard A36 SMD g28 SMD SMD resistors K24
Contextual Info: IO Expansion on the V2F-1XV5 board via the PISMO2 connector The V2F-1XV5 board does not have system bus header connectors on its top surface. As such, it does not support stacking of further LogicTiles on top of itself, nor can a custom-made interface board be mounted on top. It is

a42e

Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn
Contextual Info: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless

K215

Abstract: SK22A SK25A SK26A
Contextual Info: SK22A - SK215A 2.0 AMPS. Surface Mount Schottky Barrier Rectifiers SMA/DO-214AC Features For surface mounted application Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters

zener diode A29

Abstract: ZENER A29 a37 zener a23 zener zener diode A36 diode ZENER A26 A26 zener a36 zener marking codes A32 a59 zener diode
Contextual Info: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ59C2V7 – CAZ59C51 „ Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)

zener diode A36

Abstract: zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener ZENER A34 CAZ23C24 a59 zener diode ZENER A26
Contextual Info: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ23C2V7 – CAZ23C51 „ Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)

Contextual Info: NEW High speed, matched impedance, parallel board-to-board connector system IT1 Series receptacle 2 required IT1 Series outline IT1 is a high-speed matched-impedance parallel board-toboard connector designed for applications requiring 16mm to 50mm board-to-board spacing with transmission speeds

330 A83

Abstract: IT1-168S-SV IT1-252S-SV IT1A-168S-SV IT1A-252S-SV
Contextual Info: NEW High Speed, Matched-Impedance, Parallel Board-to-board Connector System IT1 Series Receptacle 2 required IT1 Series Outline High-speed matched-impedance parallel board-to-board connector designed for applications requiring board-toboard spacing with transmission speeds exceeding

d432937

Abstract: TRANSISTOR MARKING A33 MXXXXX O-I/025
Contextual Info: DATA SHEET_ NEC MOS INTEGRATED CIRCUIT UPD432937 2M-BIT CMOS SYNCHRONOUS FAST SRAM 64K-WORD BY 36-BIT PIPELINED OPERATION / HSTL INTERFACE Description The ,uPD432937 is a 65,536-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology

166518

Contextual Info: NEW High Speed, Matched-Impedance, Parallel Board-to-board Connector System IT1 Series Receptacle 2 required IT1 Series Outline IT1 is a high-speed matched-impedance parallel board-toboard connector designed for applications requiring 16mm to 50mm board-to-board spacing with transmission speeds

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD432937 2M-BIT CMOS SYNCHRONOUS FAST SRAM 64K-WORD BY 36-BIT PIPELINED OPERATION / HSTL INTERFACE Description The µPD432937 is a 65,536-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.