A23 TRANSISTOR Search Results

Contextual Info: bbSBTBl 003221b A23 Philips Semiconductors Product specification W A P X NPN 9 GHz wideband transistor crystal X3A-BFR520 . . N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied

Transistor A23

Abstract: DS070515 RF5125 RF5125PCBA-41X a23 power transistor
Contextual Info: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC NC VC1 NC RoHS Compliant & Pb-Free Product Package Style: QFN, 16-Pin, 3 x 3 16 15 14 13 NC 1 12 RF OUT/ VC2 RF IN 2 11 RF OUT Features „ „ 28dB Typical Small Signal Gain 10 RF OUT RF IN 3 50Ω Input and Interstage Matching

alu 74181

Abstract: 25B22 f422 S2 f19
Contextual Info: CFT1812A CFT1812A CFT1812A 32-bit ALU 74181-type DESCRIPTION: CFT1812A is a 32-bit ALU which is extended from the CFT1810A with the same functions. LOGIC SYMBOL : INPUTS (LOADING IN TRANSISTOR PAIRS ) : S3(4), S2(4), SI(4), SO(4 ), A31(2.5), A30(2.5),A29{2.5),

48-PIN

Abstract: KM29U128 KM29U128IT KM29U128T
Contextual Info: Back KM29U128T, KM29U128IT FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 1 Changed t PROG Parameter : 1ms Max.) → 500µs(Max.) July 14th 1998

SMFV016

Contextual Info: Back SmartMediaTM SMFV016 Document Title 16M x 8 Bit SmartMediaTM Card Revision History History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 1 Changed t PROG Parameter : 1ms Max.) → 500µs(Max.) July 14th 1998 Final Revision No 2) Changed t BERS Parameter : 4ms(Max.) → 3ms(Max.)

M37733S4LHP

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

M37733S4LHP

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

6D16

Abstract: M37733S4BFP
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

M37733S4BFP

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

KM29U128AT

Abstract: SAMSUNG NAND Flash Qualification Report K9F2808U0A
Contextual Info: K9F2808U0A-YCB0, K9F2808U0A-YIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advanced Information 0.0 Initial issue. April 10th 1999 0.1 1. Revised real-time map-out algorithm refer to technical notes

Contextual Info: K9F2808U0A-YCB0, K9F2808U0A-YIB0 Advanced Information FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advanced Information 0.0 Initial issue. April 10th 1999 0.1 1 Revised real-time map-out algorithm refer to technical notes)

Contextual Info: Advanced Information SmartMediaTM K9S2808V0B-SSB0 Document Title 16M x 8 Bit SmartMediaTM Card Revision History Revision No 0.0 History Draft Date Remark Initial issue. July 17th 2000 Advanced Information Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

Contextual Info: SmartMediaTM K9S2808V0M-SSB0 Document Title 16M x 8 Bit SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 1 Changed tPROG Parameter : 1ms Max.) → 500µs(Max.) July 14th 1998 Final

SMFV016

Contextual Info: SmartMediaTM SMFV016 Document Title 16M x 8 Bit SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 1 Changed tPROG Parameter : 1ms Max.) → 500µs(Max.) July 14th 1998 Final April 10th 1999

Contextual Info: Advanced Information SmartMediaTM K9S2808V0A-SSB0 Document Title 16M x 8 Bit SmartMediaTM Card Revision History History Draft Date Remark 0.0 Initial issue. April 10th 1999 Advanced Information 0.1 1 Revised real-time map-out algorithm refer to technical notes)

Contextual Info: K9F2808U0M-YCB0, K9F2808U0M-YIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 1 Changed tPROG Parameter : 1ms Max.) → 500µs(Max.) July 14th 1998 Final April 10th 1999

Contextual Info: SmartMediaTM K9S2808V0A-SSB0 Document Title 16M x 8 Bit SmartMediaTM Card Revision History History Draft Date Remark 0.0 Initial issue. April 10th 1999 Advanced Information 0.1 1 Revised real-time map-out algorithm refer to technical notes) 2) Changed voltage-density model marking method on SmartMedia

K9S2808V0C

Abstract: K9S6408V0C K9S5608V0X
Contextual Info: K9S5608V0C/B K9S2808V0C/B K9S6408V0C/B SmartMediaTM Document Title SmartMediaTM Card Revision History Revision No Draft Date Remark 0.0 Initial issue July 17th 2000 0.1 1. Explain how pointer operation works in detail. 2. Updated operation for tRST timing

50REF

Abstract: FPT-48P-M19 FPT-48P-M20 MBM30LV0128
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20885-2E FLASH MEMORY CMOS 128 M 16 M x 8 BIT NAND-type MBM30LV0128 • DESCRIPTION The MBM30LV0128 device is a single 3.3 V 16 M × 8 bit NAND flash memory organized as 528 byte × 32 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

CTS1B

Abstract: header10x2 M68SZ328ADS VME COnnector p8 and p9 68SZ328 8MX16BIT flash 29lv640 MC74HC125AD P15C transistor MBM29DL640E90TN
Contextual Info: M68SZ328ADS Application Development System User’s Manual Revision 1.2 January 29, 2002 Motorola, Inc. M68SZ328ADS Application Development System User’s Manual Revision 1.2 Jan 29, 2002 Motorola reserves the right to make changes without further notice to any product herein to improve

K9F2808U0C-YCB0

Abstract: K9F2816X0C K9F2808U0C K9F2808Q0C-DCB0 K9F2808Q0C-HCB0 K9F2808U0C-DCB0 K9F2808U0C-FCB0 K9F2808U0C-VCB0 K9F2816Q0C-DCB0 K9F2816U0C-DCB0
Contextual Info: K9F2808Q0C-DCB0,DIB0 K9F2808U0C-YCB0,YIB0 K9F2808U0C-DCB0,DIB0 K9F2808U0C-VCB0,VIB0 K9F2816Q0C-DCB0,DIB0 K9F2816U0C-YCB0,YIB0 K9F2816U0C-DCB0,DIB0 FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History

Contextual Info: K9F2808Q0C-BCB0,BIB0 K9F2808U0C-YCB0,YIB0 K9F2808U0C-BCB0,BIB0 K9F2816Q0C-BCB0,BIB0 K9F2816U0C-YCB0,YIB0 K9F2816U0C-BCB0,BIB0 K9F2808U0C-VCB0,VIB0 Advance FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History

A23 transistor

Abstract: 32MB
Contextual Info: K9F2808Q0C-BCB0,BIB0 K9F2808U0C-YCB0,YIB0 K9F2808U0C-BCB0,BIB0 K9F2816Q0C-BCB0,BIB0 K9F2816U0C-YCB0,YIB0 K9F2816U0C-BCB0,BIB0 K9F2808U0C-VCB0,VIB0 Advance FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History

Contextual Info: K9F2808Q0C-DCB0,DIB0 K9F2808U0C-YCB0,YIB0 K9F2808U0C-DCB0,DIB0 K9F2816Q0C-DCB0,DIB0 K9F2816U0C-YCB0,YIB0 K9F2816U0C-DCB0,DIB0 K9F2808U0C-VCB0,VIB0 Advance FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History