A2299 Search Results

STK5F4U3C2D-E

Contextual Info: Ordering number : EN*A2299 STK5F4U3C2D-E Advance Information Thick-Film Hybrid IC http://onsemi.com Inverter Power IPM for 3-phase Motor Drive Overview This “Inverter Power IPM” is highly integrated device containing all High Voltage HV control from HV-DC to

256MSDRAM

Abstract: celestica
Contextual Info: HYS 64/72V8300/16220GU SDRAM-Modules 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory

64V32300GU-8-A

Contextual Info: HYS 64/72V32300GU SDRAM-Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length, and Wrap Sequence Sequential &

HYS72V1

Contextual Info: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • Programmed Latencies: • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications Product Speed CL tRCD tRP • PC100 and PC133 versions

256MDDRSDRAM

Abstract: B22XX
Contextual Info: HYS 64/72V64220GU SDRAM-Modules 3.3 V 64M x 64/72-Bit SDRAM Modules 168-pin Unbuffered DIMM Modules • Single + 3.3 V ± 0.3 V power supply • 168-pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmable CAS Latency, Burst Length,

Contextual Info: HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 32M × 64/72-Bit 2 Bank SDRAM Module 168-Pin Unbuffered DIMM Modules • Programmed Latencies: • 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory

T151M

Abstract: E9H diode
Contextual Info: 2SK1945-01 L. S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • Hhjh speed switching • • • • Low on-resistance No secondary breakdown Low driving power High voltage • V c .;= ± 30 V Guarantee • Avalanche-proof

K1945

Abstract: K1945-01 2SK1945-01 2SK1945-01L T151
Contextual Info: 2 S K 1 9 4 5 - 1 L , FUJI POW ER M OS-FET S N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES I Features Outline Drawings •Hi jh speed switching >Low on-resistance >No secondary breakdown >Low driving power »High voltage 'V c;= ±30V Guarantee •Avalanche-proof

Contextual Info: HYS 72Vx2xxGR PC100 Registered SDRAM-Modules 3.3 V 168-pin Registered SDRAM Modules 64 MB, 128 MB, 256 MB, 512 MB & 1 GB Densities • 168-pin JEDEC Standard, Registered 8 Byte Dual-In-Line SDRAM Module for PC and Server main memory applications • Programmable CAS Latency, Burst Length,

PC133R-333-542-b2

Contextual Info: HYS 72Vxx3xxGR-7.5 PC133 Registered SDRAM-Modules 3.3 V 168-pin Registered SDRAM Modules PC133 128 MByte Module PC133 256 MByte module PC133 512 MByte Module PC133 1 GByte Module • 168-pin Registered 8 Byte Dual-In-Line SDRAM Module for PC and Server main