A1W* TRANSISTOR Search Results
A1W* TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| 93L422ADM/B |
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93L422A - 256 x 4 TTL SRAM |
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| 27S185DM/B |
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27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 |
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A1W* TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Multi-device Optimization for Scalable Linear HEMT ModelContextual Info: Multi-device Optimization for Scalable Linear HEMT Model Sagar Karalkar and Kanti Prasad Yu Zhu, Cejun Wei, Jerod Mason, and Dylan Bartle ECE Dept., University of Massachusetts Lowell Lowell, MA 01854 USA Sagar_karalkar@student.uml.edu Skyworks Solutions Inc., Woburn, MA 01801 USA |
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Contextual Info: SbE D • 7^237 004DQ3Ô ITA ■ S 6 T H SGS-THOMSON illM M « s 6 H *- S- THOMSON M54HC221 M74HC221 r-/7 -/f-0 DUAL MONOSTABLE MULTIVIBRATORS ■ HIGH SPEED t PD= 32 ns TYP at VCc = 5V ■ LOW POWER DISSIPATION STANDBY STATE lCc = 4 /»A (MAX.) at TA = 25°C |
OCR Scan |
004DQ3Ã M54HC221 M74HC221 150ns Duty/100 | |
A1s2
Abstract: blocking oscillator design R5B transistor MC33501 MC33503 NCS2001 NCS2200
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AND8054/D r14525 A1s2 blocking oscillator design R5B transistor MC33501 MC33503 NCS2001 NCS2200 | |
FTF4052M
Abstract: FTF4052 BAS28 BAT74 BG40 03FCG261 transistor a4z A1W diode diode a4W FTF4052C
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FTF4052M 4008H FTF4052M FTF4052 BAS28 BAT74 BG40 03FCG261 transistor a4z A1W diode diode a4W FTF4052C | |
FTF7040M
Abstract: 74ACT04 BAS28 BG40 ccd application vns Dalsa
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FTF7040M 7168H 74ACT04 BAS28 BG40 ccd application vns Dalsa | |
variable oscillator
Abstract: MC33501 MC33503 NCS2001 NCS2200 dual zener diode 3B piezoelectric film sensor
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AND8054/D r14525 variable oscillator MC33501 MC33503 NCS2001 NCS2200 dual zener diode 3B piezoelectric film sensor | |
diode a4W
Abstract: 74ACT04 BAS28 BAT74 FTF6146 FTF6146C ccd application vns transistor a4y
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FTF6146C 6096H diode a4W 74ACT04 BAS28 BAT74 FTF6146 FTF6146C ccd application vns transistor a4y | |
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Contextual Info: Advance Information KM29V64000T/R FLASH MEMORY 8M X 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64000T/R is a 8M 8,388,608 x8 bit NAND • Organization Flash memory with a spare 256K(262,144)x8 bit. Its - Memory Cell Array |
OCR Scan |
KM29V64000T/R KM29V64000T/R 528-byte |