A1T 33 Search Results

TMP68HC11A1T3

Abstract: TOSHIBA 0 el suffix tmp68hc11a0t
Contextual Info: TOSHIBA TMP68HC11A0T-3/A1T-3 The TMP68HC11A1T-3/TMP68HC11A0T-3 microcontroller MCU device is a high speed version of the TMP68HCUA1/A0 MCU device. The entire data sheet of the TMP68HC11A8 MCU applies to the TMP68HC1X A1T-3/TMP68HC11A0T-3 MCU with the exceptions provided in this appendix.

Contextual Info: Rev: 002 Product Family Data Sheet LM231A - 2323 Middle Power LED Introduction Features Beam Angle: 120˚ Precondition : JEDEC Level 2a Dimension : 2.3 x 2.3 x 0.7 mm ESD withstand Voltage : up to ± 5KV [HBM] Reliability Test : LM-80 qualified Applications

iso 10373-7 loop

Abstract: cyclic redundancy check LRI512 ISO15693 1 out of 4 inventory request AI06668 iso 10373-7 ISO15693 LRI512 ISO10373-7 7816-6 AM1
Contextual Info: LRI512 Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S. FEATURES SUMMARY • ISO15693 Standard: Fully Compliant ■ 13.56 MHz ±7 kHz Carrier Frequency ■ To the LRI512: 10% or 100% ASK modulation using: – 1/4 pulse position coding 26 kbit/s

SPMWHT

Contextual Info: Rev: 003 Product Family Data Sheet LM231A - 2323 Middle Power LED Introduction Features Beam Angle : 120˚ Precondition : JEDEC Level 2a Dimension : 2.3 x 2.3 x 0.7 mm ESD withstand Voltage : up to ± 5KV [HBM] Reliability Test : LM-80 qualified Applications

Contextual Info: ー ※ T111ax T H I R DA N G L EP R O J EC iI O N ト ! 』 CODE i÷TEEJ 1 M 1 i I LJ CAPACITANCE1D F 中 ※L 103JM3 0.01 E※T (123) f I (153) 1 1 I 1 1J183JM3 1J223JM3 O . 018 ( 183) f I 1 1 f I O . 022 (223) 1 1 1 1 f I U 1J273JM3 O . 027 ( 273) f I

Contextual Info: DATA SHEET AS218-321: PHEMT GaAs IC High Power Transfer Switch DC–6 GHz Applications ● QFN-12 WLAN 802.11a, b, g diversity 0.008 0.20 mm Seating Plane 0.118 (3.00 mm) Pin 1 Indicator Features ● Operating frequency DC–6 GHz ● Positive low voltage control (0/+3 V operation)

Contextual Info: Rev: 007 Product Family Data Sheet LM231A - 2323 Middle Power LED Introduction Features  Beam Angle : 120˚  Precondition : JEDEC Level 2a  Dimension : 2.3 x 2.3 x 0.7 mm  ESD withstand Voltage : up to ± 5KV [HBM]  Reliability Test : LM-80 qualified

a18e

Contextual Info: Preliminary I V t I C MXS3C3S11 3SM-Bit Mask ROM 8/16 Bit Output] FEATURES • Bit organization • Fast access time • Page Size • Current • Supply voltage • Package ORDER INFORMATION 4M x 8 (byte mode 2M x 16 (word mode) Random access: 100ns (max.)

STGL 12

Abstract: 60P-004
Contextual Info: MITSUBISHI MEMORY CARD STATIC R A M C AR DS M F 3 25 7 - M L D A P X X 16-bit Data Bus MF3 51 3 -M L D A P X X Static R A M Card Connect or T y p e Two-piece 60-pin DESCRIPTION M it s u b is h i's i 60-pin co n n ecto r s ta tic RAM c a rd s p ro v id e la rg e

A1T TRANSISTOR

Abstract: AD8538 A1t SOT23 AD8628 AD8629 AD8630 AD8638 AD5541 AD5542 AD8539
Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifier AD8638 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C Rail-to-rail output swing +16 V single- or ±8 V dual-supply operation High gain and CMRR: 133 dB typical High PSRR: 143 dB typical

Contextual Info: C M O S 8M 1M x 8 M ask-Program m able RO M FEATURES PIN CONNECTIONS • 1,048,576 x 8 bit organization 32-PIN DIP TOP VIEW • Access time: 120 ns (MAX.) • Programmable output enable • Fully-static operation • TTL compatible I/O • Three-state outputs

Contextual Info: P6KE SERIES V *1 4« * Si S t» M I T MO. gMwiwrÌBwrW*r r r w w E 2 E * C T fi ' " EH I ' 1 h 'j î m ü « t e : w lì» l i U M i gf, E T S ËMi taxa ‘ */Hi E M wzmim « w . tma "IBiitHit'. IN W , V • ‘ M isa ir T * NOM *■ IlLfeteim! ÏÏZ'J

Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical

A1T TRANSISTOR

Abstract: AD5541 AD8538 AD8539 AD8628 AD8629 AD8630 AD8638 AD8639 A1t SOT23
Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical

Contextual Info: i H I R DA N G L EP R O J E C T I O N ALTERATION CAP ITEM CODE F ※L 中 I DIMENSIONS ※T ※H ※ H， ※ d ECWH8103RHA 0.010 (103) 1 / 8123RHA 0.012 (123) H 5 .8 1O . 2 32. 2 f I 1 / 8153RHA 0.015(153) f I 6 .2 1O . 6 32. 6 f I 15 .4 出 バパ- 5

Contextual Info: LH5316500C FEATURES CMOS 16M 2M x 8/1M x 16 Mask-Programmable ROM PIN CONNECTIONS • 2,097,152 x 8 bit organization (Byte mode) 1,048,576 x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 nW (MAX.)

A1T TRANSISTOR

Abstract: MO-229-WEED-4 AD5541 AD8538 AD8539 AD8628 AD8629 AD8630 AD8638 AD8639
Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 µV maximum Offset drift: 0.04 µV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical

a1t diode

Abstract: A1T TRANSISTOR A1t 03 AD8639 a1y PACKAGE Thermopile Circuit AD5541 AD8538 MO-178-AA AD8628
Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical

a1T Transistor

Abstract: MO-229-WEED-4 AD8639ARZ1 A1t SOT23 a1t diode
Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical

Contextual Info: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 Low offset voltage: 9 µV maximum Offset drift: 0.04 µV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical

Contextual Info: MD-173 High Stability Coefficient Oscillator I C interface Oven Controlled Crystal Oscillator 2 MD-173 The MD-173 is a Vectron “Coefficient Oscillator” CCXO that contains a high-stability ovenized crystal oscillator and an I2C interface that communicates with temperature and current sensors, and an onboard EEPROM. The interface enables the customer

Contextual Info: 10 /\ ^ y y ? H o u s in g B = D d D O D D O D I I D D d D B D D B D I I D D d D O D D O D iI D D d D O D D D D I I D D d D O D D O D d d 00 8 . 1.47 0.55 4.55 0 . 7 * 0.05 1. ( f 7 f - ) (N O N (P IT C H ) -A C C U M U L A T IV E ) M ATERIAL : $ 0B0tf U V -

Contextual Info: MD-173 High Stability Coefficient Oscillator I C interface Oven Controlled Crystal Oscillator 2 MD-173 The MD-173 is a Vectron “Coefficient Oscillator” CCXO that contains a high-stability ovenized crystal oscillator and an I2C interface that communicates with temperature and current sensors, and an onboard EEPROM. The interface enables the customer

a1s package

Abstract: 182T2 block diagram of VCD block diagram of VCD and its functions cyclic redundancy check LRI512 ISO15693 1 out of 4 inventory request CRC16 ISO15693 LRI512 ISO10373-7
Contextual Info: LRI512 ISO 15693 standard compliant, 13.56 MHz, 512 bit, high-endurance EEPROM TAG IC with EAS Not For New Design Features • ISO 15693 standard: fully compliant ■ 13.56 MHz ±7 kHz carrier frequency ■ To the LRI512: – 10% or 100% ASK modulation using: