A1972 TRANSISTOR Search Results

A1972 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

A1972 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor A1972 Abstract: A1972 A1972 IE 2SA1972 Contextual Info: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO	Original	2SA1972 transistor A1972 A1972 A1972 IE 2SA1972	PDF
transistor A1972 Abstract: a1972 2SA1972 a1972 Transistor Nortec 19 Contextual Info: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO −400	Original	2SA1972 transistor A1972 a1972 2SA1972 a1972 Transistor Nortec 19	PDF
transistor 2sa1972 Abstract: transistor A1972 A1972 Contextual Info: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO −400	Original	2SA1972 transistor 2sa1972 transistor A1972 A1972	PDF
a1972 Abstract: transistor A1972 2SA1972 transistor 2sa1972 A1972 IE a1972 Transistor Contextual Info: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO	Original	2SA1972 a1972 transistor A1972 2SA1972 transistor 2sa1972 A1972 IE a1972 Transistor	PDF
a1972 Abstract: transistor A1972 2SA1972 A1972 IE Contextual Info: 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO	Original	2SA1972 O-92MOD a1972 transistor A1972 2SA1972 A1972 IE	PDF
"Signal Line Filter" Abstract: electrical based microcontroller projects 78M05 sot223 EMC for PCB Layout MC908AP64 1n4733 smd MC68HC9S08AW60 AN2764 Signal Line Filters a1972 Contextual Info: Freescale Semiconductor Application Note AN2764 Rev. 0, 06/2005 Improving the Transient Immunity Performance of Microcontroller-Based Applications by: Ross Carlton, Greg Racino, John Suchyta Freescale Semiconductor, Inc. Introduction Increased competition among appliance manufacturers, as well as market regulatory pressures, are	Original	AN2764 "Signal Line Filter" electrical based microcontroller projects 78M05 sot223 EMC for PCB Layout MC908AP64 1n4733 smd MC68HC9S08AW60 AN2764 Signal Line Filters a1972	PDF