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lvds to eDP

Abstract: CB-130UH Power consumption of FCBGA nec asic product letter nec cb cell-based product letter
Contextual Info: CB-130 0.13 µm Features >> 0.13 µm drawn silicon gate CMOS process >> Four transistor characteristics (low power, mid-range power, high speed, ultra-high speed) selectable on the same chip >> All-layer Cu wiring with up to 9 metal-layers options CB-130 Cell-based CMOS ASIC