A1357 TRANSISTOR Search Results

A1357 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA	Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
27S185DM/B	Rochester Electronics LLC	27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18	PDF

A1357 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
A1357 transistor Abstract: a1357 2SA1357 Contextual Info: 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)	Original	2SA1357 A1357 transistor a1357 2SA1357	PDF
A1357 transistor Abstract: A1357 Contextual Info: 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)	Original	2SA1357 150HIBA A1357 transistor A1357	PDF
A1357 transistor Abstract: a1357 Toshiba A1357 2SA1357 Contextual Info: 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications • Unit: mm hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)	Original	2SA1357 A1357 transistor a1357 Toshiba A1357 2SA1357	PDF

Catalog Datasheet

Type

Document Tags

PDF

A1357 transistor

Abstract: a1357 2SA1357
Contextual Info: 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)

Original

2SA1357 A1357 transistor a1357 2SA1357

PDF

A1357 transistor

Abstract: A1357
Contextual Info: 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)

Original

2SA1357 150HIBA A1357 transistor A1357

PDF

A1357 transistor

Abstract: a1357 Toshiba A1357 2SA1357
Contextual Info: 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications • Unit: mm hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)

Original

2SA1357 A1357 transistor a1357 Toshiba A1357 2SA1357

PDF