A1356 TRANSISTOR Search Results

A1356 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
BLA1011-300		Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B		Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA		Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B		Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
27S185DM/B		Rochester Electronics LLC	27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18	PDF

A1356 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: A1356 High Precision Linear Hall-Effect Sensor With an Open Drain Pulse Width Modulated Output Features and Benefits Description Simultaneous programming of PWM carrier frequency, quiescent duty cycle, and sensitivity; for system optimization Factory programmed sensitivity temperature coefficient	Original	A1356	PDF
A1356 transistor Abstract: a1356 "Linear Hall-effect Sensor" Contextual Info: A1356 High Precision Linear Hall-Effect Sensor With an Open Drain Pulse Width Modulated Output Features and Benefits Description ▪ Simultaneous programming of PWM carrier frequency, quiescent duty cycle, and sensitivity; for system optimization ▪ Factory programmed sensitivity temperature coefficient	Original	A1356 A1356 transistor a1356 "Linear Hall-effect Sensor"	PDF
A1356 transistor Abstract: A1356 A1356LKB-T Contextual Info: A1356 High Precision Linear Hall-Effect Sensor IC With an Open Drain Pulse Width Modulated Output Features and Benefits Description ▪ Simultaneous programming of PWM carrier frequency, quiescent duty cycle, and sensitivity; for system optimization ▪ Factory programmed sensitivity temperature coefficient	Original	A1356 A1356 transistor A1356LKB-T	PDF
A1356 transistor Contextual Info: A1356 High Precision Linear Hall-Effect Sensor IC With an Open Drain Pulse Width Modulated Output Features and Benefits Description ▪ Simultaneous programming of PWM carrier frequency, quiescent duty cycle, and sensitivity; for system optimization ▪ Factory programmed sensitivity temperature coefficient	Original	A1356 A1356 transistor	PDF
A1356 transistor Abstract: 2SA1356 a1356 2SC3419 Contextual Info: 2SA1356 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1356 Audio Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.32 V (typ.) (IC = −500 mA, IB = −50 mA) • High collector power dissipation: PC = 1.2 W (Ta = 25°C)	Original	2SA1356 2SC3419 A1356 transistor 2SA1356 a1356 2SC3419	PDF
A1356 transistor Abstract: 2SA1356 Contextual Info: 2SA1356 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1356 Audio Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.32 V (typ.) (IC = −500 mA, IB = −50 mA) • High collector power dissipation: PC = 1.2 W (Ta = 25°C)	Original	2SA1356 2SC3419 A1356 transistor 2SA1356	PDF
A1356 transistor Abstract: 2SA1356 2SA1356 A1356 2SC3419 A1356 A135 Contextual Info: 2SA1356 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1356 Audio Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.32 V (typ.) (IC = −500 mA, IB = −50 mA) • High collector power dissipation: PC = 1.2 W (Ta = 25°C)	Original	2SA1356 2SC3419 A1356 transistor 2SA1356 2SA1356 A1356 2SC3419 A1356 A135	PDF