A1356 TRANSISTOR Search Results

A1356 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

A1356 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: A1356 High Precision Linear Hall-Effect Sensor With an Open Drain Pulse Width Modulated Output Features and Benefits Description Simultaneous programming of PWM carrier frequency, quiescent duty cycle, and sensitivity; for system optimization Factory programmed sensitivity temperature coefficient	Original	A1356	PDF
A1356 transistor Abstract: a1356 "Linear Hall-effect Sensor" Contextual Info: A1356 High Precision Linear Hall-Effect Sensor With an Open Drain Pulse Width Modulated Output Features and Benefits Description ▪ Simultaneous programming of PWM carrier frequency, quiescent duty cycle, and sensitivity; for system optimization ▪ Factory programmed sensitivity temperature coefficient	Original	A1356 A1356 transistor a1356 "Linear Hall-effect Sensor"	PDF
A1356 transistor Abstract: A1356 A1356LKB-T Contextual Info: A1356 High Precision Linear Hall-Effect Sensor IC With an Open Drain Pulse Width Modulated Output Features and Benefits Description ▪ Simultaneous programming of PWM carrier frequency, quiescent duty cycle, and sensitivity; for system optimization ▪ Factory programmed sensitivity temperature coefficient	Original	A1356 A1356 transistor A1356LKB-T	PDF
A1356 transistor Contextual Info: A1356 High Precision Linear Hall-Effect Sensor IC With an Open Drain Pulse Width Modulated Output Features and Benefits Description ▪ Simultaneous programming of PWM carrier frequency, quiescent duty cycle, and sensitivity; for system optimization ▪ Factory programmed sensitivity temperature coefficient	Original	A1356 A1356 transistor	PDF
A1356 transistor Abstract: 2SA1356 a1356 2SC3419 Contextual Info: 2SA1356 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1356 Audio Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.32 V (typ.) (IC = −500 mA, IB = −50 mA) • High collector power dissipation: PC = 1.2 W (Ta = 25°C)	Original	2SA1356 2SC3419 A1356 transistor 2SA1356 a1356 2SC3419	PDF
A1356 transistor Abstract: 2SA1356 Contextual Info: 2SA1356 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1356 Audio Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.32 V (typ.) (IC = −500 mA, IB = −50 mA) • High collector power dissipation: PC = 1.2 W (Ta = 25°C)	Original	2SA1356 2SC3419 A1356 transistor 2SA1356	PDF
A1356 transistor Abstract: 2SA1356 2SA1356 A1356 2SC3419 A1356 A135 Contextual Info: 2SA1356 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1356 Audio Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.32 V (typ.) (IC = −500 mA, IB = −50 mA) • High collector power dissipation: PC = 1.2 W (Ta = 25°C)	Original	2SA1356 2SC3419 A1356 transistor 2SA1356 2SA1356 A1356 2SC3419 A1356 A135	PDF