A11A17 Search Results

JESD97

Abstract: M29F400 M29F400B M29F400BB M29F400BT
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical

A67L73361

Abstract: A67L83181
Contextual Info: A67L83181/A67L73361 Preliminary 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAM Document Title 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue July 8, 2005 Preliminary

Contextual Info: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

M29W400

Abstract: nc 555 M29W400BB M29W400BT TFBGA48
Contextual Info: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME FBGA – 10µs per Byte/Word typical

M50FW002

Abstract: PLCC32
Contextual Info: M50FW002 2 Mbit 256Kb x8, Boot Block 3V Supply Firmware Hub Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 3 V to 3.6 V for Program, Erase and Read Operations – VPP = 12 V for Fast Program and Fast Erase

Contextual Info: 4 Mbit x16 Multi-Purpose Flash Plus A Microchip Technology Company SST39VF401C / SST39VF402C / SST39LF401C / SST39LF402C Data Sheet The SST39VF401C / SST39VF402C / SST39LF401C / SST39LF402C are 512K x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary,

JESD97

Abstract: M29F400 M29F400B M29F400BB M29F400BT K 1603 24v
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Features • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical ■ 11 memory blocks

Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5V±10% supply voltage for program, erase and read operations ■ Access time: 45ns ■ Programming time – 8µs per Byte/Word typical ■

Contextual Info: M29W400DT M29W400DB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 45, 55, 70ns ■ PROGRAMMING TIME

Contextual Info: M50FW002 2 Mbit 256Kb x8, Boot Block 3V Supply Firmware Hub Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 3 V to 3.6 V for Program, Erase and Read Operations – VPP = 12 V for Fast Program and Fast Erase (optional)

M29DW324D

Abstract: M76DW52004TA Stacked 4MB NOR FLASH
Contextual Info: M76DW52004TA M76DW52004BA 32Mbit 4Mb x8/ 2Mb x16, Dual Bank, Boot Block Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • MULTIPLE MEMORY PRODUCT Figure 1. Package – 32 Mbit (4Mb x8 or 2Mb x16), Dual Bank, Boot

J32CG

Abstract: 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4
Contextual Info: 1 2 4 3 5 6 7 TABLE OF CONTENTS F F PAGE 02 - BLOCK DIAGRAM PAGE 03 - 750GX ADDRESS/DATA BUSSES PAGE 04 - 750GX CONTROLS AND GROUND PAGE 05 - 750GX POWER AND DECOUPLING PAGE 06 - TSI108 PROCESSOR BUS INTERFACE PAGE 07 - TSI108 MEMORY INTERFACE PAGE 08 - DDR2 DIMM CONNECTOR SLOT 0

3348DC

Contextual Info: M29W400DT M29W400DB 4 Mbit 512 Kb x 8 or 256 Kb x 16, boot block 3 V supply Flash memory Features „ Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read SO44 (M)(1) „ Access time: 45, 55, 70 ns „ Programming time – 10 s per byte/word typical

Contextual Info: M50LPW002 2 Mbit 256Kb x8, Boot Block 3V Supply Low Pin Count Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 3 V to 3.6 V for Program, Erase and Read Operations – VPP = 12 V for Fast Program and Fast Erase

Stacked 4MB NOR FLASH & SRAM

Abstract: m76 symbol M76 switch M29DW323D M76DW52003BA M76DW52003TA
Contextual Info: M76DW52003TA M76DW52003BA 32Mbit 4Mb x8/ 2Mb x16, Dual Bank, Boot Block Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • MULTIPLE MEMORY PRODUCT Figure 1. Package – 32 Mbit (4Mb x8 or 2Mb x16), Dual Bank, Boot

M29W400BB

Abstract: M29W400BT TFBGA48 M29w400 application
Contextual Info: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME FBGA – 10µs per Byte/Word typical

Contextual Info: M50FW002 2 Mbit 256Kb x8, Boot Block 3V Supply Firmware Hub Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 3 V to 3.6 V for Program, Erase and Read Operations – VPP = 12 V for Fast Program and Fast Erase (optional)

low pin count lpc

Contextual Info: M50LPW002 2 Mbit 256Kb x8, Boot Block 3V Supply Low Pin Count Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 3 V to 3.6 V for Program, Erase and Read Operations – VPP = 12 V for Fast Program and Fast Erase

Contextual Info: M50LPW020 2 Mbit 256Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional) ■ TWO INTERFACES – Low Pin Count (LPC) Standard Interface for

Contextual Info: M50LPW002 2 Mbit 256Kb x8, Boot Block 3V Supply Low Pin Count Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 3 V to 3.6 V for Program, Erase and Read Operations – VPP = 12 V for Fast Program and Fast Erase

Contextual Info: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical

Contextual Info: M50LPW012 2 Mbit 256Kb x8, Boot Block 3V Supply Low Pin Count Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations ■ – VPP = 12V for Fast Program and Fast Erase LOW PIN COUNT (LPC) – Standard Interface for embedded operation

29lv400

Abstract: AS29LV400
Contextual Info: 6HSWHPEHU  3UHOLPLQDU\ ,QIRUPDWLRQ $6/9 Š 9 . [ . î  &026 ODVK 3520 )HDWXUHV • Low power consumption - 200 nA typical automatic sleep mode current - 200 nA typical standby current - 10 mA typical read current • JEDEC standard software, packages and pinouts

J-STD-020B

Abstract: M36W0R5020B0 M36W0R5020T0 m36w0r5
Contextual Info: M36W0R5020T0 M36W0R5020B0 32 Mbit 2Mb x16, Multiple Bank, Burst Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 32 Mbit (2Mb x 16) Flash Memory – 1 die of 4 Mbit (256Kb x16) SRAM • SUPPLY VOLTAGE