A06 TRANSISTOR Search Results

MPSA55

Abstract: A06 NPN mpsa56 mpsa06 MFS-A05 MPS-A05 MPS-A06 MPS-A55 MPS-A56 MPS A06
Contextual Info: MPS-A06 MPS-A56 MPS-A05 MPS-A55 W'ß\ COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS CASE TO-92A THE MPS-A05, MPS-A06, MPS-A55» MPS-A56 ARE SILICON PLANAR EPITAXIAL„TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE MPS-A05,

Contextual Info: MPS-A05 • MPS-A06 MPS-A55 •MPS-A56 COMPLEMENTARY SILICON AP MEDIUM POWER TRANSISTORS * <l t e ± s . i = M = L ? « 1~ " x ” s ~ • CASE TO-92A THE MPS-A05, MPS-A06, MPS-A55» MPS-A56 'ARE SILICON PLANAR EPITAXIAL„TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS

MPSa56

Abstract: transistor A55 LO5A A06 NPN MPS-A56 mpsa55 a56 transistor kps a56 MPS A56 transistor MPS-A05
Contextual Info: MPS-A55 • MPS-A56 COMPLEMENTARY SILICON AP MEDIUM POWER TRANSISTORS i II CASE T0-92A THE MPS-A05, MPS-A06, MPS-A55, MPS-A56 'ARE SILICON PLANAR EPITAXIAL„TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE MPS-A05, MPS-A06 ARE NPN AND ARE COMPLEMENTARY TO

a06 amplifier

Abstract: a06 transistor a06 transistor 165 MPS-A05 MPS-A06
Contextual Info: r— i Silicon Transistors I I B I MPS-A05 MPS-A06 The MPS-A05 and MPS-A06 are silicon planar epitaxial passivated NPN tran­ sistors designed for general purpose audio amplifier applications. a b s o lu te m a x im u m r a t i n g s : TA = 25°c unless otherwise specified

marking A06

Abstract: marking A06 amplifier KTMC1060SC MMBT3904T MMBT3906T transistor j25
Contextual Info: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • Suitable for general switching & amplification Marking : A06 • Well suited for portable application

Contextual Info: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • Suitable for general switching & amplification • Well suited for portable application E B Marking : A06

Contextual Info: Transistors NPN General Purpose Transistor I SSTA06/M MSTA06/M PS A06 # External dimensions Units : mm •F eatures 1 ) B V ceo < 4 0 V (lc = *1 m A ) SSTA06 2 ) Complements the SSTA56/MMSTA56/MPSA56. 0 .9 5 ± g ; f 1 9 ± 0 .2 •P ackage, mark and packaging specifications

sta06

Abstract: mark T116
Contextual Info: Transistors I NPN General Purpose Transistor SST A06/MMSTA06/MPSA06 •Features •Externa dimensions Units : mm) Í ) B V c e o < 4 0 V ( I c ^ lm A ) 2 ) Com plem ents the SS T A 56 /M M S T A 5 6/M PS A 56 . SSTA06 •Package, mark and packaging specifications

a06 transistor

Abstract: transistor 468 TRANSISTOR A06 mpsa065 a06 amplifier transistor A55 MPSA55 GE 001755 a56 transistor Transistor B C 468
Contextual Info: G E SOLID STATE Öl ÏVEÏ3Û750Û1 DOIVES Signal Transistors MPS-A05, A06, A55, A56 Silicon Transistors TO-92 The GE/RCA MPS-A 05,06 NPN types and M PS-A 55,56 PNP types are planar epitaxial passivated silicon transistors de­ signed for medium current general purpose amplifier appli­

Contextual Info: MPS-A06 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)500m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)100m

a06 transistor

Abstract: TRANSISTOR A06 a06 amplifier mpsa065
Contextual Info: G E SOLI» STATE DI DEÏ3Û75D01 DOIVES Signal Transistors MPS-A05, A06, A55, A56 Silicon Transistors TO-92 T h e G E/R C A M P S -A 0 5 ,0 6 N PN types and M P S -A 5 5 ,56 PNP types are planar epitaxial passivated silicon transistors de­ signed for medium current general purpose amplifier appli­

Siemens DIODE E 1240

Abstract: AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor
Contextual Info: S IE M E N S SIEGET 25 BFP420 NPN Silicon RF Transistor • • • • • • For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency 1j = 25 GHz Gold metalization for high reliability

SIEMENS BFP405

Abstract: marking A06 transistor A06
Contextual Info: SIEMENS SIEGET 25 BFP405 NPN Silicon RF Transistor • • • • • • For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 22 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability

a06 transistor

Abstract: CHIP T503 S BFP450 siemens BFP450
Contextual Info: S IE M E N S SIEGET 25 BFP450 NPN Silicon RF Transistor • • • • • For Medium Power Amplifiers Compression Point P.1dB = +19 dBm at 1.8 GHz Maximum Available Gain G ma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency f j = 24 GHz

a06 transistor

Abstract: TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405
Contextual Info: SIEGET 25 BFP405 NPN Silicon RF Transistor Low Current Applications l For Oscillators up to 12 GHz l For Noise Figure F = 1.15 dB at 1.8 GHz l Outstanding G = 22 dB at 1.8 GHz Transition Frequency f = 25 GHz l Gold metalization for high reliability l SIEGET 25-Line

A05 SOT

Abstract: A06 NPN a06 transistor marking A06 A05 sot-23 a06 to92 k 036 A06 diode D 92 M 03 DIODE MMBTA05
Contextual Info: MPSA05/06 / MMBTA05/06 NPN SMALL SIGNAL TRANSISTORS POWER SEMICONDUCTOR Features • • • MMBTA05 / MMBTA06 Epitaxial Planar Die Construction High Transition Frequency Recommended for Driver and Low-Power Output Stages A C TOP VIEW B C B E G E D H K Mechanical Data

AMS 3630

Abstract: a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420
Contextual Info: SIEGET 25 BFP420 NPN Silicon RF Transistor l For High Gain Low Noise Amplifiers l For Oscillators up to 10 GHz l Noise Figure F = 1.05 dB at 1.8 GHz Outstanding G = 20 dB at 1.8 GHz l Transition Frequency f = 25 GHz l Gold metalization for high reliability

Contextual Info: CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N-P-N transistor Marking CMBTA05 = IH CMBTA06 = IG PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 038 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR J.02 0.89" 2 .00 _ 0.60 0.40

Contextual Info: CMBTA05 CMBTA06 SIOCON EPITAXIAL TRANSISTORS N -P-N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0_ 2.8 0.14 0.48 1538 L 0.70 0.50 3 Pin configuration 1.4 2.6 2.4 1.2 RO.l 1 = BASE 2 = EMITTER 3 = COLLECTOR ComT

Contextual Info: CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N -P-N transistor Marking CMBTA05 = IH CMBTA06 = IG PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 "^^009 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _K02 0.89" 0.60 0.40

Contextual Info: DISCRETE SEMICONDUCTORS MPSA05; MPSA06 NPN general purpose transistors Product specification Supersedes data of 1997 Mar 26 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Jul 21 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors

a06 transistor

Abstract: TRANSISTOR A06 marking A06 CMBTA05 CMBTA06 TZ marking
Contextual Info: CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N -P-N transistor M arking CMBTA05 = IH CMBTA06 = IG PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1. 02 _ 0.89 0.60 0.40

A06 smd

Abstract: A06 smd transistor SMD A06 a06 transistor A05 smd A05 SOT marking a06 CMBTA05 CMBTA06 transistor A06
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transisto r Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm