A02 55 DIODE Search Results

a02 marking code

Abstract: marking AAS diode a02
Contextual Info: S IE M E N S BAR 80 Silicon RF Switching Diode • • • Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss Type BAR 80 Marking AAs Ordering code tape and reel Package ’ > Pin configuration 1 2 3 Q62702-A1084

Marking AAs

Abstract: Q62702-A1084
Contextual Info: BAR 80 Silicon RF Switching Diode l l l Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss Type BAR 80 Marking AAs Ordering code tape and reel Package Pin configuration 1 2 3 Q62702-A1084 C A 1) 4 C A MW-4 Maximum ratings

BXY43P

Abstract: BXY43P-FP 43P-FP 43p MARKING CODE diode a02
Contextual Info: HiRel Silicon PIN Diode BXY 43P Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Current controlled RF resistor for RF attenuators and switches ¥ High reverse voltage ¥ Matched diode - pair ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5513/030

Contextual Info: SIEMENS BXY 44P HiRel Silicon PIN Diode Features • HiRel Discrete and Microwave Semiconductor • Current controlled RF resistor for RF attenuators and switches • High reverse voltage • Matched diode - pair • Hermetically sealed microwave package @sa qualified

44P-FP

Abstract: BXY44P BXY44P-FP Q62702X165 Q62702X166
Contextual Info: HiRel Silicon PIN Diode BXY 44P Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Current controlled RF resistor for RF attenuators and switches ¥ High reverse voltage ¥ Matched diode - pair ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5513/030

Contextual Info: BAS20H Small Signal Switching Diodes .039 1.0 2 1 .055(1.4) .031(0.8) .045(1.15) .004(0.10 )Max. .071(1.8) .063(1.6) .106(2.7) .091(2.3) .016(0.40) .010(0.25) PRIMARY CHARACTERISTICS IF 200mA VRRM 200V IFSM 625mA VF 1250mV .007(0.18)Max. SOD-323 Dimensions in inches and (millimeters)

Contextual Info: BAS21H Small Signal Switching Diodes .039 1.0 2 1 .055(1.4) .031(0.8) .045(1.15) .004(0.10 )Max. .071(1.8) .063(1.6) .106(2.7) .091(2.3) .016(0.40) .010(0.25) PRIMARY CHARACTERISTICS IF 200mA VRRM 250V IFSM 625mA VF 1250mV .007(0.18)Max. SOD-323 Dimensions in inches and (millimeters)

Contextual Info: BAW56/BAV70/BAV99/BAL99 Small Signal Switching Diodes .119 3.0 .110(2.8) .103(2.6) .086(2.2) .056(1.4) .047(1.2) .007(.17) .002(.05) .007(.20)MIN .083(2.1) .066(1.7) .044(1.1) .035(0.9) .020(.50) .013(.35) .006(.15)MAX PRIMARY CHARACTERISTICS SOT-23 Dimensions in inches and (millimeters)

W65C265

Abstract: diode u2 a05 diode A23 C2344 62C256 A06 diode a06 transistor W65C265DB W65C265S OSC14A
Contextual Info: 5 4 3 2 1 REVISION RECORD LTR E CO NO: A P PROVED: D A T E: VCC_ARROW VCC_ARROW D 2 4 6 8 D J6 JUMPER4 C3 C C4 C C5 C C6 C C7 C C8 C 23 44 63 84 JP3 1 JP4 3 JP5 5 JP6 7 C2 C Y2 1 EN OUT 8 C 17 12 19 18 16 15 J1 1 3 5 7 WE PHI2 SYNC DODB TG1 TG0 VDD VDD VDD

W65C816

Abstract: A06 diode RWB 252 diode A23 dba1 62C256 27C256 XC9572 a03p a023
Contextual Info: 6 5 4 3 2 1 R E V I SION RECORD L TR E C O NO: A P P R O V ED: D ATE: VCC_ARROW C6 C7 C8 C9 C10 C11 C12 C C C C C C C GND J8 D D GND VCC_ARROW 4 2 4 2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 OCSE VCC_ARROW 1 21 22 23 24 25 26 27 28 29 30 31 32 J P1

W65C02

Abstract: PLD26 62c256 XC9572 A06 diode pld-40 PLD32 PLD33 SW_SPST PLD40
Contextual Info: 6 5 4 3 2 1 REVISION RECORD LTR E CO NO: A P PROVED: D A T E: VCC_ARROW C6 C C7 C C8 C C9 C C10 C C11 C C12 C GND J8 D VCC_ARROW +5V 2 4 2 4 VCC_ARROW JP6 JP1 JUMPER2 JUMPER2 A[00:23] 1 3 1 3 A[00:23] D[0:7] VCC_ARROW Y1 EN OUT 8 10 11 13 14 15 16 17 18 19

3B27V

Abstract: 3B16V 3B-22 SMB3EZ150 3B91V 3B130V 3B11V ma121
Contextual Info: SMB3EZxx SERIES Surface Mount Device 0.086 2.20 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) PRIMARY CHARACTERISTICS 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 6.2~200V VRRM 0.008 (0.203) Max. VF 1.5V

BCM 4752

Abstract: AM4825P_AP ICS951418 1310A21421-0 Inventec tt1.0 Inventec 8C540 R5C803 BQ24703 BSS84_3P
Contextual Info: TT 1.0 MV2 Build 2007/03/02 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : TT1.0 SIZE CODE A3 CS SHEET For WWAN Solution REV DOC. NUMBER 1310A21421-0 1 OF A02

Contextual Info: 1SS355 Small Signal Switching Diodes .039 1.0 2 1 .055(1.4) .031(0.8) .045(1.15) .004(0.10 )Max. .071(1.8) .063(1.6) .106(2.7) .091(2.3) .016(0.40) .010(0.25) PRIMARY CHARACTERISTICS IF 100 mA VRRM 80 V IFSM 500 mA VF 1.2 V TJ max 125°C .007(0.18)Max. SOD-323

Contextual Info: BAW56T/BAV70T/BAV99T Small Signal Switching Diodes 4˚ 0˚ .069 1.75 .057 (1.45) .043 (1.10) .035 (0.90) .008 (0.20) .004 (0.10) .004 (0.10) .000 (0.00) .069 (1.75) .057 (1.45) .010 (0.25) .006 (0.15) .0020TYP (0.500)TYP .033 (0.85) .030 (0.75) .022REF (0.55)REF

panasonic r1551

Abstract: Inventec kbc1122 3C1140 U700D CN702 aux m62 ati VAIL2-0 TP9054 slg8lp462
Contextual Info: CONISTON 1.0 PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 PAGE PAGE TABLE OF CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM DC & BATTERY CHANGER BATTERY CONN & SELECT SYSTEM POWER +V3A / +V5A CPU POWER (+VCC_CORE) SYSTEM POWER (+VCCP / +V1.5S)

ITE8502E-L

Abstract: ITE8502E TPS51610 RTL8111CP IT8502E G5693 tps51125 ITE8502F circuit diagram of usb webcam ISL6251
Contextual Info: 5 4 3 2 1 THIS DRAWING AND SPECIFICATIONS, HEREIN, ARE THE PROPERTY OF INVENTEC CORPORATION AND SHALL NOT BE REPODUCED, COPIED, OR USED IN WHOLE OR IN PART AS THE BASIS FOR THE MANUFACTURE OR SALE OF ITEMS WITHOUT WRITTEN PERMISSION, INVENTEC CORPORATION, 2009 ALL RIGHT RESERVED.

Telcordia SR-332 GB

Contextual Info: OKX T/10 & T/16-D12 Series www.murata-ps.com Adjustable DOSA 10/16-Amp SIP DC/DC Converters PRODUCT OVERVIEW The OKX-T/10 and -T/16 series are miniature SIP non-isolated Point-of-Load POL switch mode DC/DC power converters for embedded applications. The

bms 97

Abstract: 37265
Contextual Info: S IE M E N S BGA427 Si-M M IC-Am plifier in SIEGET 25-Technology Preliminary Data # Cascadable 50 £2-Gain Block # # Unconditionally stable Gain |s21f =18.5 dB at 1.8 G H z appl.1 Gain |s21f =22 dB at 1.8 G H z (appl.2) IP3out = +7 dBm at 1.8 G H z # (V D=3V, lD=9.4m A)

.0549

Abstract: marking A02 a02 Transistor rf mje 1827 transistor 139 BF BGA427 GPS05605 Q62702-G0067 transistor NF j1 marking code marking code 8Ff
Contextual Info: SIEM ENS BG A427 S i-M M IC -A m p lifier in SIEGET 25-Technology Preliminary Data # # # # # # # Cascadable 50 £2-Gain Block Unconditionally stable Gain |s21|2=18.5 dB at 1.8 GHz appl.1 Gain |s21f= 2 2 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz

Contextual Info: RBC-12/17-D48 Series www.murata-ps.com Quarter Brick, Regulated Bus Converters Output V Current (A) Nominal Input (V) 12 17 48 Optimized for distributed power Regulated Intermediate Bus Architectures (RIBA), the RBC DC/DC bus converter series offer regulated

Contextual Info: HPH-12/30-D48 Series www.murata-ps.com Isolated, 12 VOUT, 30A, Half-Brick DC/DC Converters PRODUCT OVERVIEW For applications requiring improved electrical and thermal performance, consider Murata’s new HPH series “Half Brick” DC/DC power converters. These

Contextual Info: PPJA3402 30V N-Channel Enhancement Mode MOSFET Voltage 30 V SOT-23 4.4A Current Unit: inch mm Features  RDS(ON) , VGS@10V, ID@4.4A<48mΩ  RDS(ON) , VGS@4.5V, ID@3.6A<53mΩ  RDS(ON) , VGS@2.5V, ID@2.5A<66mΩ  RDS(ON) , VGS@1.8V, ID@1.5A<92mΩ

mps+0842

Contextual Info: UEI25-120 Series www.murata-ps.com Single Output Isolated 25-Watt DC/DC Converters PRODUCT OVERVIEW Typical unit FEATURES „ Small footprint DC/DC converter, ideal for high current applications „ Industry standard 0.96" x 1.1" x 0.32" open frame package and pinout