A0-A7 ROM Search Results

Contextual Info: 27C010T 1 Megabit 128K x 8-Bit OTP EPROM VPP 1 32 A5 VCC A9 A16 PGM A15 NC A12 A12 A14 A16 A7 A13 I/O0 A6 A8 I/O7 A5 A9 27C010T A4 A3 1024 x 1024 Memory Matrix X-Decoder Input Data Control Y-Gating Y-Decoder A11 OE A2 A10 A1 CE A0 I/O7 I/O0 I/O6 CE OE A0-A4

Contextual Info: 27C010T 1 Megabit 128K x 8-Bit OTP EPROM A5 VPP 1 32 VCC A9 A16 PGM A15 NC A12 A12 A14 A16 A7 A13 I/O0 A6 A8 I/O7 A5 A9 27C010T A4 A3 1024 x 1024 Memory Matrix X-Decoder Input Data Control Y-Gating Y-Decoder A11 OE A2 A10 A1 CE A0 I/O7 I/O0 I/O6 CE OE A0-A4

512 eeprom dip 32-pin

Abstract: Real Time Clock 34-pin DS1646 DS1647 DS1647P DS164XP DS9034PCX
Contextual Info: DS1647/DS1647P PRELIMINARY DS1647/DS1647P Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real time clock, crystal, power– A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND fail control circuit and lithium energy source

DS1646

Abstract: DS1647 DS1647P DS164XP DS9034PCX
Contextual Info: DS1647/DS1647P PRELIMINARY DS1647/DS1647P Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real time clock, crystal, power– A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND fail control circuit and lithium energy source

5962-8606301XA

Abstract: SMJ27C256-25JM 27C256-15 27C256-17 27C256-20 27C256-25 SMJ27C256 SMJ27C256-30JM
Contextual Info: UVEPR OM UVEPROM SMJ27C256 Austin Semiconductor, Inc. 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 32-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-86063

5962-8606301XA

Contextual Info: UVEPROM AS27C256 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • -55C to 125C operation • MILITARY Processing Methods

SMD MARKING CODE A12

Abstract: SMD MARKING CODE A10 SMJ27C512 SMJ27C512-15JM 59628764801XA marking code a8 SMD 5962-8764802XA
Contextual Info: UVEPROM SMJ27C512 AS27C512 Austin Semiconductor, Inc. 512K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) 600-Mils AVAILABLE AS MILITARY SPECIFICATIONS A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-87648

27C256-12

Abstract: 27C256-15 AM27C256
Contextual Info: UVEPROM AS27C256A Austin Semiconductor, Inc. 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • -55C to 125C operation

5962-8606301XA

Abstract: 5962-8606301 5962-8606305XA UVEPROM 5962-8606302XA SMD MARKING CODE A12 General Instrument 27c256 SMJ27C256-25JM code eprom smd smd code a12
Contextual Info: UVEPROM SMJ27C256 AS27C256 Austin Semiconductor, Inc. 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-86063

marking code EA SMD 5 pins

Abstract: parallel to ASI
Contextual Info: UVEPROM AS27C256A Austin Semiconductor, Inc. 256K CMOS UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS z z z VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND -55C to 125C operation

UVEPROM

Abstract: SMJ27C512 marking code EA SMD 5 pins 5962-8764801XA
Contextual Info: UVEPROM SMJ27C512 512K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) 600-Mils AVAILABLE AS MILITARY SPECIFICATIONS A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-87648 • MIL-STD-883 FEATURES •

5962-8606301XA

Abstract: SMJ27C256 27C256-15 27C256-17 27C256-20 27C256-25 SMJ27C256-30JM SMJ27C256-17JM
Contextual Info: UVEPROM SMJ27C256 Austin Semiconductor, Inc. 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 32-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-86063 • MIL-STD-883

Contextual Info: D S 1647/D S1647P PRELIMINARY DALLAS SEMICONDUCTOR DS1647/D S1647P Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • Integrated NV SRAM, real time clock, crystal, powerfail control circuit and lithium energy source

OSC1 1

Contextual Info: 1.2 Internal Block Diagram Port A Port B Port C WDT x 2 channels PC7/A7 PC6/A6 PC5/A5 PC4/A4 PC3/A3 PC2/A2 PC1/A1 PC0/A0 Port 3 ROM mask ROM, flash memory PB7/A15/TIOCB5 PB6/A14/TIOCA5 PB5/A13/TIOCB4 PB4/A12/TIOCA4 PB3 / A11/TIOCD3 PB2/A10/TIOCC3 PB1/A9/TIOCB3

DS1646

Abstract: DS1646P DS164XP DS9034PCX
Contextual Info: DS1646/DS1646P DS1646/DS1646P Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real time clock, crystal, power– NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND fail control circuit and lithium energy source • Clock registers are accessed identical to the static

smd 3y3

Abstract: SMD K22 smd 1a2 RCA 2A3 JB16 smd 2a3 AL300 AVDD300 DVDD300 6 pin mini din lcd
Contextual Info: A B C D E 14.318MHz Opt AVDD300 DVDD300 Y1 10uh(Opt) VDOUT[15:0] 3 U2 2 20 22 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 O1 O2 O3 O4 O5 O6 O7 O8 ROMD0 ROMD1 ROMD2 ROMD3 ROMD4 ROMD5 ROMD6 ROMD7 VDOUT7 VDOUT6 VDOUT5 VDOUT4 VDOUT3 VDOUT2 VDOUT1 VDOUT0

st7011

Abstract: 74HCT245 3x3 matrix Z80S183 10BT SD10 SD12 SD13 SD14 SD15
Contextual Info: A B C D VCC R12 10K INT0 INT1 INT2 R10 10K A0 RAMWR RAMRD IORD IOWR AM0 AM1 AM2 RESET VCC A0 A1 A2 A3 GND A4 A5 A6 A7 GND D0 D1 D2 D3 GND D4 D5 D6 D7 GND IORD IOWR RESET PHI o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o o

TMR01

Abstract: bh8s
Contextual Info: 1.2 Internal Block Diagram Port A PC7 / A7/ PWM1 PC6 / A6/ PWM0 PC5/ A5 PC4/ A4 PC3/ A3 PC2/ A2 PC1/ A1 PC0/ A0 14-bit PWM timer Port 3 8bit timer x 4 channels SCI × 5 channels IrDA × 1channel I2C bus interface (option) TPU Port B WDT × 2 channels RAM

countdown timer code for 8051 with keypad

Abstract: intel 8051 opcode sheet DS2250 DS2250T DS5000 DS5000FP DS5000T DS5000TK PC15 interfacing of magnetic stripe with 8051
Contextual Info: USER’S GUIDE SECTION 19: INSTRUCTION SET DETAILS INSTRUCTION CODE ARIT ITHM METIC OP PERA ATION MNEMONIC HEX BYTE CYCLE EXPLANATION D7 D6 D5 D4 D3 D2 D1 D0 ADD A, Rn 1 1 n2 n1 n0 28–2F 1 1 A = (A) + (Rn) ADD A, direct a7 a6 1 a5 a4 a3 1 a2 a1 1 a0 25

H8S-2398

Contextual Info: 1.2 Block Diagram Port E Peripheral data bus Port B PB7 /A15 PB6 /A14 PB5 /A13 PB4 /A12 PB3 / A11 PB2 /A10 PB1 /A9 PB0 /A8 Port C PC7 /A7 PC6 /A6 PC5 /A5 PC4 /A4 PC3 /A3 PC2 /A2 PC1 /A1 PC0 /A0 Port 3 P35 /SCK1 P34 /SCK0 P33 /RxD1 P32 /RxD0 P31 /TxD1 P30 /TxD0

ebe switches

Abstract: 34-PIN DS1647 DS1647-12
Contextual Info: D S 1647/D S1647LPM P R E L IM IN A R Y DALLAS SEMICONDUCTOR DS1647/DS1647LPM Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • Integrated NV SRAM, real time clock, crystal, power­ fu l control circuit and lithium energy source

ds1642-150

Abstract: DS1642 MK48T02
Contextual Info: DS1642 DS1642 Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Form, fit, and function compatible with the MK48T02 Timekeeping RAM A7 1 24 VCC A6 2 23 A8 A5 3 22 A9 A4 4 21 WE A3 5 20 OE A2 6 19 A10 A1 7 18 CE A0 8 17 DQ7 DQ0 9 16 DQ6 DQ1 10 15 DQ5

XTAL 4.00

Contextual Info: Port A PA7/A23/IRQ7 PA6/A22/IRQ6 PA5/A21/IRQ5 PA4/A20/IRQ4 PA3/A19 PA2/A18 PA1/A17 PA0/A16 Port B PB7/A15 PB6/A14 PB5/A13 PB4/A12 PB3/A11 PB2/A10 PB1/A9 PB0/A8 Port C PC7/A7 PC6/A6 PC5/A5 PC4/A4 PC3/A3 PC2/A2 PC1/A1 PC0/A0 Port 3 DMAC ROM* Flash memory Periheral adree bus

27C256TRP-120

Abstract: 27C256TRP-150 27C256TRP-200
Contextual Info: SPACE ELECTRONICS INC. 256K-BIT 32K X 8-BIT - OTP EPROM SPACE PRODUCTS Vpp 1 27C256TRP 32 Vcc A4 A9 X-Decoder PGM NC A12 NC NC A12 A14 A7 A13 A6 A8 A5 A9 A14 Address I/O0 Input Data Control I/O7 SEi 27C256TRP A4 A3 Y-Decoder OE A1 CE A0 I/O7 I/O0 I/O6 I/O1