A M E 26 Search Results

Signetics 2650

Abstract: SIGNETICS 2656
Contextual Info: S ig n e tic s Microprocessors 2656—System Memory Interface C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T h e 2 6 5 6 S y s t e m M e m o r y In te rfa c e S M I is a m a sk p r o g r a m m a b le c irc u it w ith o n -c h ip m e m o r y , I/O , and

SCBH05F

Abstract: SDA267
Contextual Info: SDA 267 *6do<m 10 amp rectifier assembly * AVERAGE OUTPUT CURRENT * P IV 50 TO & 150 NSEC. M A X I M U M R E C O V E R Y •k M A X I M U M THERMAL R ESISTANCE 5°C/WATT JUNCTION TO CASE * H E R M E T I C A L L Y S E A L E D D I O D E CELLS * TURRET TERMINAL

1N4611A

Abstract: IN4778A IN4778 1N3780 1N3781 1N3782 1N3784 1N4611 1N4612 1N4612A
Contextual Info: T E M P E R A T U R E C O M P E N S A T E D Z E N E R R E F E R E N C E D IO D E S N o m in a l M in im u m M a x i m u m M a x im u m M a x im u m 2enér Zenei E f fe c t iv e V o lt a g e V o lt a g e T e m p e r a t u r e T e m p e ratti re l í i S f l ! : V o lt a g e

8L15A

Abstract: NT25-6 sec sl06 SFE 8 528257J C198
Contextual Info: TOSHIBA TC528257 t a r g e t s il ic o n g a t e c m o s 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION T h e T C 5 2 8 2 5 7 is a 2 M bit C M O S m u ltip o rt m e m o ry e q u ip p e d w ith a 2 6 2 ,1 4 4 -w o rd s by ra n d o m a cc e ss m e m o ry R A M p o rt an d a 5 1 2 -w ords by

MBM2256

Abstract: MIL883B 3 DG 1008 me 218l MIL-883 bubble memory
Contextual Info: g MBM2256 MOTOROLA A d v a n c e Inform ation 256 K x 1-BIT MAGNETIC BUBBLE MEMORY DEVICE G E N E R A L D E S C R IP T IO N The M B M 2256 is a 262,144 (218l b it m a gn e tic b u b b le m e m o ry device. A ll re qu ire d m a g n e tic co m p o n e n ts in c lu d in g the p e rm a ­

MBM2256

Contextual Info: MOTOROLA MBM2256 Advance Information G E N E R A L D E S C R IP T IO N 256 K x 1-BIT MAGNETIC BUBBLE MEMORY DEVICE The M B M 2256 is a 262,144 2 ^ 1 b it m a gn e tic b u b b le m e m o ry device. A ll re q u ire d m a g n e tic co m p o n e n ts in clu d in g the p e rm a ­

TC574200D-10

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC574200D-10,-120,-150 4 M E G A B IT 262,144 W O R D X 16 B IT / 524,288 W O R D x 8 BIT C M O S U.V . E R A S A B L E A N D E L E C T R IC A L L Y P R O G R A M M A B L E R E A D O N L Y M E M O R Y DESCRIPTIO N

Contextual Info: DBS Standard Communication Band Amplifiers 21.5-22.5GHz, 23.6-26.5GHz G u a r a n te e d D B S S t a n d a r d C o m m u n ic a tio n A m p lif ie rs w ith o u t T e m p e r a t u r e C o m p e n s a tio n @ +25 C G a in d B N o is e M in . M in . DBS-2122N410

27C010

Abstract: 27C020 27C040 27C080 27C256 27C512 NM27C256 NM27C256N
Contextual Info: NM27C256 262,144-Bit 32K x 8 High Performance CMOS EPROM General Description T h e N M 2 7 C 2 5 6 is o n e m e m b e r o f a high d e n s ity E P R O M F a m ily w h ic h ra n g e in d e n s itie s up to 4 Mb. T h e N M 2 7 C 2 5 6 is a 2 5 6 K E le c tric a lly P ro g ra m m a b le R ead O n ly

rr10-10

Abstract: REMEC Magnum
Contextual Info: MMDS Model MRR1010 31 Channel, 2500 to 2686 MHz DOWNCONVERTER/ANTENNA D e s c r ip t io n R E M E C M a g n u m Õs s e r ie s o f M M D S c o n v e r te r s a n d a n te n n a s h a v e b e e n d e s ig n e d to o p e r a te in in te n s e in te r fe r e n c e e n v ir o n m e n ts . T h e p r e - L N A Þlte r

Contextual Info: TOSHIBA TC528257 t a r g e t s il ic o n g a t e c m o s 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION T h e T C 5 2 8 2 5 7 is a 2 M b it C M O S m u ltip o rt m e m o ry e q u ip p e d w ith a 2 6 2 ,1 4 4 -w o rd s b y ra n d o m access m e m o ry R A M p o rt an d a 5 1 2 -w o rd s b y

DIODE ku 1490

Abstract: ku 1490 spectra Ve 1200 capacitor ase 104
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 D e sig n e d fo r 26 v o lts m icro w a ve la rg e -s ig n a l, c o m m o n em itte r, cla s s A and c la s s A B lin e a r a m p lifie r a p p lic a tio n s in in d u s tria l a n d c o m m e rc ia l F M /A M

Contextual Info: A DEGSON Product S p e cification DEGSON ELECTRONICS CO., LTD. ' % * • 8 E D G K M A -5 .0 8 E D G K M A -5 .0 8 8 E D G K M A -7 .5 8 E D G K M A -7 .6 2 in the couse of application <C ?<V -fty HOW TO ORDER: i-m p -m n - JL z : a _ 18.10_ . 26.45 i

Contextual Info: P a r t N u m b e r C ro ss R e f e r e n c e Product Number Product Type Page Product Number Product Tvoe 1006 S c r e w T e r m in a l 26 3 2 8 -1 4 4 S o ld e r T e r m in a l 41 1006 N O T A P S c r e w T e r m in a l 26 3 2 8 -1 5 6 S o ld e r T e r m in a l

Contextual Info: O K I se m ico n d u cto r MSM514251RS/ZS_ 262,144 words X 4 bits Multi-port DRAM <Statlc Column M ode> DESCRIPTION T h e O K I M S M 5 1 4 2 5 1 is a h ig h sp e ed 1M b its M u lti- p o rt D y n a m ic R a n d a m A cce ss M e m o r y d e s ig n e d

Contextual Info: c o il ; @ +25°C C U ST O M ER DATA S H E E T RE SISTAN C E 700 OHMS * 10% N O M I N A L V O L T A G E _ 26.5 VDC 13.5 VOC M U S T O P E R A T E . M UST R E L E A S E L 5 - 8 .0 V£<t e n v ir o n m e n t : V IB R A T IO N SHOCK /Q 100 TEMPERATURE CPS

2N2631

Abstract: 2N28 2N2876
Contextual Info: M IL -S -1 9 5 0 0 /3 0 3 N A V Y A M END M ENT 3 26 F e b r u a r y 1 9 7 1 _ SU PERSEDING 1 / AM ENDM ENT 2 14 M a rc h 1966 M ILITA R Y SP E C IF IC A T IO N TRANSISTOR, T Y P E S 2N2631 AND 2N 28” 6 T h is a m e n d m e n t f o r m s a p a r t of M ilita ry S p e c ific a tio n M IL -S -1 9 5 0 0 / 503(NAVY), 22 O c to b e r 1964.

SF229

Abstract: toshiba s105
Contextual Info: TOSHIBA TC528257 t a r g e t s il ic o n g a t e c m o s s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION T h e T C 5 2 8 2 5 7 is a 2M b it C M O S m u ltip o rt m e m o ry eq u ip p e d w ith a 2 6 2 ,1 4 4 -w o rd s b y ra n d o m a ccess m e m o ry R A M p o rt a n d a 5 1 2 -w o rd s by

t3d 66

Abstract: T3D 64 737 s1g t3d 29 T3D 90
Contextual Info: DISC CERAMIC CAPACITORS T U S O N IX S T Y L E N U M B E R M A X I M U M D IA M E T E R D L E A D S P A C IN G (S ) W IR E G A U G E (A W G ) T E M P E R A T U R E C O M P E N S A T IN G E X T E N D E D T E M P E R A T U R E C O M P E N S A T IN G G EN ERAL PU RPO SE

CnPABO

Contextual Info: nporPAMMHbiM MOfíynb fín z monitor O E H A P Y K E H M ä T P A H C n O P T H b I X CPEflCTB M O n P E f l E A E H M Z X A P A K T E P M C T M K f l O P O M H O r O f l B M M E H M Z n O M 3 0 E P A M E H M t ö O T B M f l E O K A M E P b l TMKernel C n p aB O H H o e pyKOBOflCTBO

SX6s

Contextual Info: ' • F IL A M E N T R E P L A C E M E N T LEDs - T e c h n ic a l Info i> ^ T E C H N I C A L INILa m p B a s e St y l e S e r ie s M e t r ic E q u i v a l e n t (m m M a x P o w e r D is s ip a t io n (m W ) Sub-M idget Flange T1, T11ASX3s Sub-M idget Flange T1, T11/« SX3s

Contextual Info: TOSHIBA TC528267 s i l i c o n g a t e CMOS 262,144WORDS x 8BITS MULTIPORT DRAM target DESCRIPTION T h e T C 5 2 8 2 6 7 is a 2 M b it C M O S m u ltip o rt m e m o ry e q u ip p e d w ith a 2 6 2 ,1 4 4 -w o rd s by ra n d o m acc e ss m e m o ry R A M p o rt an d a 5 1 2 -w o rd s b y

J297

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF899 D esig n ed fo r 26 V olt U H F la rg e -s ig n a l, c o m m o n em itte r, C la s s A B lin e a r a m p lifie r a p p lica tio n s in in d u stria l and c o m m e rcia l F M /A M e q u ip m e n t o pe ra tin g

speaker with screen

Abstract: h 48 diode ediswan 10
Contextual Info: PEN. 453 DD D O U B L E D IO D E A M P L IF IE R FOR BEAM A C /D C POWER M A IN S R A TIN G . 45-0 H e a te r V oltag e H e a te r C u rr e n t A m p s . . M a x im u m A n o d e V oltage M a x im u m Screen V oltag e M .u ua! C o nd uctan ce ( m A /V )