A 798 TRANSISTOR Search Results

Contextual Info: ACPM-5813 3x3 mm Power Amplifier Module LTE Band 13/14 777 – 798 MHz Product Brief Description The ACPM-5813 is a fully matched 10-pin surface mount module developed for LTE Band 13 and Band 14, operating in the 777 – 798 MHz bandwidth. The ACPM-5813 meets

Contextual Info: ACPM-5013 3 x 3 mm Power Amplifier Module LTE Band13/14 777-798 MHz Data Sheet Description Features The ACPM-5013 is a fully matched 10-pin surface mount module developed for LTE Band 13 and Band 14, operating in the 777-798 MHz bandwidth. The ACPM-5013 meets

121PW111

Abstract: IL-310-T41S-VF Transistor D 799 NL8060BC31-17 121LHS15 NL8060BC31 DF9-41P-1V BHR-03VS-1 DF9-41S-1V SM03
Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL8060BC31-17 31 cm 12.1 inches , 800 x 600 pixels, 262,144 colors High luminance, wide viewing angle, reversible scan direction DESCRIPTION The NL8060BC31-17 is a TFT (thin film transistor) active-matrix color liquid crystal display (LCD) module

121PW111

Abstract: HSYNC, VSYNC, DE, input, output Transistor D 798 121LHS15 invertor lcd IL-310-T41S-VF Transistor D 799 12.1-inch lcd Color TFT LCD Module EN0510 BHR-03VS-1
Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL8060BC31-17 31 cm 12.1 inches , 800 x 600 pixels, 262144 colors High luminance, Wide viewing angle, Reversible scan direction DESCRIPTION NL8060BC31-17 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) module comprising

Transistor D 798

Abstract: 104PWBR1 NEC 104PWbr1 Transistor D 799 104LHS31 nec inverter NEC lcd backlight inverter lcd backlight nec inverter 7 pin diagram 104PW DF9-41P-1V
Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL8060BC26-17 26 cm 10.4 inches , 800 x 600 pixels, 262,144 colors high luminance, wide viewing angle DESCRIPTION The NL8060BC26-17 is a TFT (thin film transistor) active-matrix color liquid crystal display (LCD) module comprising an amorphous silicon TFT attached to each signal electrode, a driving circuit, and a backlight.

NL8060BC31-02

Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL8060BC31-02 31 cm 12.1 type , 800 x 600 pixels, 262144 colors, incorporated one lamp/edge-light type backlight DESCRIPTION NL8060BC31-02 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) module comprising

Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL8060BC31-09 31 cm 12.1 type , 800 x 600 pixels, 262144 colors, incorporated one lamp/edge-light type backlight DESCRIPTION NL8060BC31-09 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) module comprising

NL8060AC26-11

Abstract: NL6448AC33-18 DF9-41P-1V DF9-41S-1V ttl 41 pin hirose
Contextual Info: TFT COLOR LCD MODULE NL8060AC26-11 26 cm 10.4 type , 800 x 600 pixels, 262144 colors, incorporated two lamps/edge-light type backlight DESCRIPTION NL8060AC26-11 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) module comprising

Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL8060AC26-11 26 cm 10.4 type , 800 x 600 pixels, 262144 colors, incorporated two lamps/edge-light type backlight D E S C R IP T IO N N L 8 0 6 0 A C 2 6 -1 1 is a T F T (thin film transistor) active matrix color liquid crystal display (LCD) module comprising

104BLM

Abstract: NL8060BC26-13 DF9B-41P-1V ED-2522
Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL8060BC26-13 26 cm 10.4 type , 800 x 600 pixels, 262144 colors, incorporated one lamp/edge-light type backlight DESCRIPTION NL8060BC26-13 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) module comprising

A 798 transistor

Abstract: SOT89 MARKING CODE B1 MARKING G3 Transistor 2W marking
Contextual Info: KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W Marking 7 9 P Y 8 W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings

f2116te20v

Abstract: F2116BG20V Diode KD 514 H8S/2116 f2116te 7152 PS2 keyboard PROTOCOL Synchro REJ09B0255-0100 ka bs 89
Contextual Info: REJ09B0255-0100 16 H8S/2116Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2116 Rev.1.00 Revision Date: Mar. 02, 2006 R4F2116 Rev. 1.00 Mar. 02, 2006 Page ii of xl Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SD1508 DARLINGTON POWER INDUSTRIAL APPLICATIONS Unit in mm TO-126 (similar) COMPLETE MOLD PACKAGE (IS TYPE). 8.3 M A X . This IS type transistor series is new product formed by thinly and uniformly coating the flange with molding

Contextual Info: DTA123YU/DTA123YK/DTA123YS/DTA123YF DTA123YL/DTA123YA/DTA123YV / T ransistors D TA 123Y U /D TA 123Y K /D TA 123 YS D TA 123Y F/D TA 123Y L/D TA 123 YA DTA123YV 7 ^/Transistor Switch Digital Transistors Includes Resistors • ^ W ^ T H ill/D im en sio n s (Unit: mm)

k 319

Abstract: Q62702-F272 A 798 transistor transistor H 802 BFS55
Contextual Info: BFS55 NPN Transistor for RF applications up to the GHz range BFS 55 is a NPN silicon RF transistor in a case 18 A 4 DIN 41 876 TO -72 . The terminals are electrically insulated from the case. The transistor is especially designed for use in RF applications up into the GHz range, e.g.,antenna amplifiers and radar

rhythm

Abstract: key16 HT3015A
Contextual Info: HT3015A 15 Latin Rhythm Generator Features • • • Operating Voltage: 2.4V~5.0V Directly drive an external transistor Low stand-by current • • • 15 rhythms triggered by 16 keys 3Hz LED flash output 24 pin dual-in-line package • Sound effect generators

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D • bbS3T31 QDEfilbE 37fl 2N 5086 2N 5 087 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P small-signal transistors in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary types are 2N5088/2N5089.

GL+7837

Contextual Info: Gl BDE T> • 7*12*1237 QQBD'ib'i 1 H M vi>K¿.3 BFW 16A BFW 17A S C S - T H O M S O N lu í * ® s G S-THOMSON CATV-MATV AMPLIFIERS DESCRIPTION The BFW 16A and BFW 17A are multi-emitter sili­ con planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation

transistor BD 522

Abstract: bd800 bd802 TRANSISTOR BD 168 BD798 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800
Contextual Info: MOTORCLA SC XSTRS/R 12E F D I b3fcj72SM MOTOROLA Qüfl MTST " M | BD796 BD798 SEMICONDUCTOR TECHNICAL DATA BÒ800 BD8Û2 PLASTIC HIGH POWER SILICON PNP TRANSISTOR 8 AMPERE POWER TRANSISTOR . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.

j521

Contextual Info: 3135GN-170M Rev 2 3135GN – 170M 170 Watts - 60 Volts, 300 s, 10% 3100 - 3500 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 3135GN-170M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 170 Watts of pulsed RF

BFY90

Abstract: 73180 Tfk 880 BFy 90 transistor
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis in den GHz-Bereich Applications: General up to the GHz range Besondere Merkmale: Features: • Leistungsverstärkung 8 dB 800 MHz • Power gain 8 dB (800 MHz)

2731GN

Contextual Info: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF

2735GN-100

Abstract: transistor 3,5Ghz, power 100w s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ power transistor gan s-band
Contextual Info: 2735GN-100 Rev 1 2735GN – 100M 100 Watts - 60 Volts, 300 s, 10% 2700 - 3500 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2735GN-100 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 100 Watts of pulsed RF

transistor J11

Abstract: s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ 2735GN-35M transistor B 974 power transistor gan s-band d 2037 transistor
Contextual Info: 2735GN-35M Rev 1 2735GN – 35M 35 Watts - 60 Volts, 300 s, 10% 2700 - 3500 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2735GN-35M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 35 Watts of pulsed RF