A 7913 S Search Results

Contextual Info: ? } M e i Advanced Control Components I Rii Inc. ÆAM-7913 Cellular Band Power Amplifier 935-960 MHz mmm FEATURES: • H igh Intercept Point • Excellent Gain vs Tem perature Stability • Superb Efficiency GUARANTEED SPECIFICATIONS: The ACAM 7913 is one in a series of Narrow Band Power

Contextual Info: P e rfo rm a n c e Level N b o f C o n ta c ts PL3 : PL2 : S4 : 50 m a tin g C y c le s 2 5 0 m a tin g C y c le s 0 ,7 6 p m A u or No G as T est 4 day G as T est e q u iva le n t P d N i P a rt N u m b e r P a rt N u m b e r P a rt N u m b e r D im e n s io n s

Contextual Info: PL3 : 50 m ating C ycles No Gas Test Perform ance Level PL2 : 250 m ating C ycles 4 days Gas Test 34 : 0.76pm A u or equivalent PdNi Part Number Part Number Part Number Nb of C ontacts 06 10 14 16 20 24 26 30 34 40 50 60 64 06 10 14 16 20 24 26 30 34 40 50

Contextual Info: 37, 85 *0,9 Max. 10,5 Max. 10,5 W W / M <*1 CO 23, 3 / • 0 2,6_ 2, >4 2 , 5 / x 12 = ( 30, 4 8 Max. 7, 9 42, 16 48, 26 LO OO 1,27 J +a 3,81 - p,- c h - ni □ □ □ □ □ a □ □ □ □i H- m PCB l ayout , component side

Contextual Info: Max. 17,53 10,5 ♦0,9 Max. 10,5 Max. 6,5 ill rights reserved PC B com pon ent side holes Alle Rechte Vorbehalten/ All layout, 09 18 510 7911 3 4,5 09 18 510 6911 2 4,5 34890 D I/02/08 PK Detoil. DI/ 12/99 09 18 510 5911 0,76 im Au 4,5 29753 11/ 03/02 JB Insp.

Contextual Info: Max. 86,11 10,5 ♦ 0,9 Max. 10,5 Max. 6,5 □ 0,64 ; ^ffioXULJXulAJXUliAJXulAJXLLÜjJ II t & & 1 CO LD V -JC— % T Y/// =* CD K 1 2,54 LD a ±0,3 2,54 X 31 = 78,74 Max. C vl 7,9 90 ,4 2 96 ,5 2 PC B layout, co mpo nen t side Ln Min. 0 2,8 CO ill rights reserved

harting eurl F-95972 64 poles

Contextual Info: Max. 81,03 10,5 •0,9 Max. 10,5 Max. 6,5 cr" ÌÌ . [ ] Ir A/vw* ‘ / / □ 0,64 CO n r LO y -jC"- m T y/// p i i bbbbbbbbbbbbbbbbbbbbbbbbbbbb CD ^ 1 2,54 LO O nI a ±0,3 2,54 X Max. 7,9 29 = 73,661 85,34 PCB layout, component side LO CO Í 2,8 Min. X -0-

Contextual Info: 8 *£ g£ •=j ^ & ? V 'y *tr f x m'&'S: u-~Fitti 'y ^ -< >ffl ^ 'V twiÄÄi^ . > *c 'V ’ ^ “7* U' K* : ^ S t A r K U ^ •S-^ jx. ;U :$W , 'V ;U > >y^• U ^ ^ £> 3 V* W- & * ÏÄÖ5J 'V ¿r -Ttr-Y K y-!r'y I« > 'y *ï 2. — -*X-1 791 39-X, X-1 791 40-X

947-75

Contextual Info: Oct. 1997 JS9P08-AS Draft 1 RF PERFORMANCE. SPECIFICATIONS CHARACTERISTICS O utput Powder at ldB Com pression Point Pow er Gain, at ldB Compression Point D rain C urrent Pow er Added Efficiency ( Ta= 2K°C 1 SYMBOL CONDITION MIN. TYP. M AX U N IT PldB 21.5 23.0 — dBm

3.5mm jack

Contextual Info: This drawing and any data contained therein is the property of Gilbert Engineering Co., Inc., and constitutes and contains proprietary and confidential information. Neither receipt nor possession of this drawing confers or transfers any right to duplicate, use, or disclose any information contained herein

TSKS5400-ESZ

Abstract: TEKS5400 TSKS5400
Contextual Info: TSKS5400 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description TSKS5400 is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.

CQX48A

Abstract: BPW78 CQX48 CQX48B
Contextual Info: CQX48 GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case. The diode is case compatible to the BPW78 phototransistor, allowing the user to assemble his own optical

F465A

Abstract: 5G14 CDMA450 ceramic filter 465 NR5004-AS03 27-dBm
Contextual Info: SAW Bandpass Filter F465A Features z RF bandpass filter for CDMA450 A-band Rx. Part z Usable bandwidth 5MHz 462.5MHz ~ 467.5 MHz z High attenuation z No matching 50Ω single-ended operation z Ceramic Surface Mounted Device Package ( 3.8 mm x 3.8 mm ) z

09 73 196 6801

Abstract: 7907
Contextual Info: Technical characteristics Number of contacts 16-96 Contact spacing mm 2.54 Working current 2 A max. 1 A with insulation displacement 40 A max. type M Clearance ≥ 1.2 mm Creepage ≥ 1.2 mm Current carrying capacity The current carrying capacity is limited by maximum temperature of

TEKS5400

Abstract: TEKT5400S TSKS5400S
Contextual Info: TSKS5400S Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSKS5400S is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides high radiant intensity in a low profile package.

Contextual Info: TSKS5400 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • Peak wavelength: λp = 950 nm • High reliability • High radiant power

Contextual Info: TSKS5400 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • Peak wavelength: λp = 950 nm • High reliability • High radiant power

lm 7914

Abstract: kostal
Contextual Info: Tem ic TSKS5412X01 S e m i c o n d u c t o r s GaAs Infrared Emitting Diode in Side View Package Description TSKS5412 is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides an improved radiant intensity in

Contextual Info: DOMESTIC REPS HAWAII MINNESOTA OHIO ALABAMA Centaur North, Inc. D.A. Case Associates, Inc. Midwest Marketing Associates 2 8 9 0 Zanker Road, Ste. 203 San Jo se, CA 9 5 1 3 4 4 0 8 8 9 4 -0 1 8 2 4 6 2 0 W 77th Street Suite # 2 5 0 M inneapolis, M N 5 5 435

D-P5DW

Abstract: 10 35L W1 double acting cylinder 10 35L CAP CDQ2B63 D-J79W ya10 THREAD ROD 11-CQ2 CQ2B16-PS
Contextual Info: Compact Cylinder: Standard Type Double Acting, Single Rod Series CQ2 ø12, ø16, ø20, ø25, ø32, ø40, ø50, ø63, ø80, ø100 How to Order Without auto switch With auto switch CQ2 B 20 30 D CDQ2 B 20 30 D J79W S Built-in magnet Ȝ Ȝ Mounting style Ȝ B Through-hole Standard F Rod side flange style

B12 GDM

Abstract: s3v03 pj950 RM3203 s3v 03 c5121 00 toshiba hdd schematic diagram 12b gdm TOSHIBA CRT TV SCHEMATIC DIAGRAM PZ47913-274B-01
Contextual Info: 5 TO3655— 2E T O S H I B A C O N F I D E N T I A L SCHEMATIC PRODUCT UNIT NAME DIAGRAMS MlBSlQ CR VP EMDSY 1 NAME UNIT NG. PWA NAME PWA NO. PWB NAME PWB NO. PAGE SH. REV PAGE FUNCTION 1 OO 1 COVER SHEET O1 2 002 COVER & Rev. 3 003 BLOCK DIAGRAM 4 004 5 100

Contextual Info: Features • Core • • • • • • • – ARM Cortex®-M3 revision 2.0 running at up to 48 MHz – Thumb®-2 instruction – 24-bit SysTick Counter – Nested Vector Interrupt Controller Pin-to-pin compatible with SAM7S legacy products 48- and 64-pin versions and