A 5D Search Results

FR05CM

Contextual Info: SENSORS SEMICONDUCTIVE MAGNETIC mtiffntn NON-CONTACT POTENTIOMETER LP06M 2F1A A LP06M 3R 1A A LP06M 4R 1A A P a rt N u m b e r LP 06M 2F1A A LP 06M 3R 1A A LP 06M 4R 1A A L P 0 5D 3 G 1 A A M a x im u m R a te d V o lta g e V 6 6 5 E ffe c tiv e E le c tric a l T ra v e l ( * )

277V

Contextual Info: CH I C A G O M I N I A T U R E LAMP E D E3 5DÛ2DMÔ Chicago Miniature Lamp - •■ ■ .- — A N A M E R I C A N M A N I IF A C T II R F R C M L 3 S e rie s 0 D G 1 4 b 3 b40 ■ CML - - In d ic a to r L ig h ts

mf31m1-l5dat

Contextual Info: MITSUBISHI M EM O R Y CARD STATIC R A M CARDS MF365 A L 5 D A T X X MF365A-J1DATXX MF3 12 9 L 5 D A T X X MF3 12 9 J 1 D A T X X MF325 7 L 5 D A T X X MF325 7-J1DATXX MF35 13-L 5D A T X X MF3 5 13 - J 1 D A T X X MF31M1-L5DATXX MF31M1-J1DATXX MF32M1L6DATXX

Contextual Info: PRODUCT Æ lltron CATAL ULTRA FAST RECOVERY RECTIFIERS 400V, 8 A , 50ns 500V, 8 A , 50ns 600V, 8 A , 50ns SDR08400 J A A ,JAB 5DR08500 JAA,JAB SDR08600 JAA,JAB MAXIMUM RATINGS PER DIODE FEATURES OPERATING JUNCTION TEMPERATURE RANGE STORAGE TEMPERATURE RANGE

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2SC5097 TENTATIVE DATA U nit in mm V H F — UHF B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • • Low Noise Figure, High Gain. NF = 1.8dB, |S2le |2 = 9-5dB f = 2GHz +as 2.9 - a 3 M A X IM U M R A TIN G S (Ta = 25°C)

3000 watt audio circuit diagram

Abstract: 1500 watt audio amplifier circuit diagram 4000 watts power amplifier circuit diagram audio amplifier circuit diagram 4000 watt 4-400a eimac Tube 4-400a 4250A 4-250A 500 watts audio amplifier diagram 4000 WATT amplifier diagram
Contextual Info: 5D22 -M e i t e l c SAN C , u l l o u g h BRUNO, RADIAL-BEAM POWER TETRODE i nc • MODULATOR OSCILLATOR AMPLIFIER C A L I F O R N I A The E im ac 4 -2 5 0 A is a c o m p a c t, ru g g e d ly c o n s tru c te d p o w e r te tr o d e h a v in g a m a xim u m p la te

Contextual Info: FEATURES • 600-800 MHz ■ SMA Connectors ■ Low Loss, 3.4 dB Typical ■ Phase Compensated .25 dB .5 dB 4 dB 8 dB 16 dB 32 dB n > F +15V 6ND C1 25dB A A A A A A o C2 o o C4 o o o C3 1dB "O' 5dB “0" “1" C5 4dB ••0" 2dB ••O' C6 edB “0" C7 16dB

54rba

Abstract: BUX 64
Contextual Info: .{xywz{ */{4,~3 *:8BC@:A t OcYW]U_ ]agY[eUgY W]eWh]g0 [bbX cYeZbe`UaWY t OcYW]U_ \][\1cbjYeYX WbagUWgf0 h_geU1_ba[ _]ZY t OheZUWY `bhag]a[ gYW\ab_b[l0 UXiUaWYX WeUZgjbe^ t Ob_]X VUfY XYf][a0 fgUV_Y fgehWgheY 5D?;98< {?<;98B;>=A Phea]a[ _U`c , D_Uf\]a[ _U`c Wbageb_

55RB

Contextual Info: .{xywz */{4,~3 *:8BC@:A t OcYW]U_ ]agY[eUgY W]eWh]g0 [bbX cYeZbe`UaWY t OcYW]U_ \][\1cbjYeYX WbagUWgf0 h_geU1_ba[ _]ZY t OheZUWY `bhag]a[ gYW\ab_b[l0 UXiUaWYX WeUZgjbe^ t Ob_]X VUfY XYf][a0 fgUV_Y fgehWgheY 5D?;98< {?<;98B;>=A Phea]a[ _U`c , D_Uf\]a[ _U`c Wbageb_

Contextual Info: GENERAL PURPOSE TRANSISTOR P -N -P transistor M ark in g P A C K A G E O U T L IN E D E T A IL S CM BT4125 = 5D ‘ A L L D IM E N S IO N S IN m m 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR A B SO L U T E M A X IM U M R A T IN G S Collector-base voltage open emitter

Contextual Info: C H I C AG O M I N I A T U R E LAMP b2E D B 5DÖ2GMfi □ D G 1 3 S 1 b2M * C M L Chicago Miniature Lamp •A N A M E R IC A N M A N I IF A C T IIR F R - - - "

Flcl03

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR U n it in mm V H F — UHF B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • Low Noise Figure, H igh G ain. N F = 1.8dB, |S 2lel2 = ?.5dB f = 2GHz M A X IM U M R A TIN G S (Ta = 25°C) CHARACTERISTIC

2SC3260

Abstract: 2-5K1A toshiba
Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R A A A n A A f ì - 2SC3260 U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. 4.6 MAX. NF = 1.7dB, |S2lel2 = 15.0dB f=500M Hz NF = 2dB, |S 2 i e l 2 = 9-5dB(f=1000M Hz)

694K

Abstract: BA 345 BAy9S
Contextual Info: .zwxvy{ */z4,~3 *:8BC@:A t OcYW]U_ ]agY[eUgY W]eWh]g0 [bbX cYeZbe`UaWY t OheZUWY `bhag]a[ gYW\ab_b[l0 UXiUaWYX WeUZgjbe^ t Ob_]X VUfY XYf][a0 fgUV_Y fgehWgheY 5D?;98< z?<;98B;>=A Phea]a[ _U`c , D_Uf\]a[ _U`c Wbageb_ |,z3z|5~3-45-|4 Kbe`]aU_ ib_gU[Y 56RBA

case to106

Abstract: 2n5163 TO-106 5458 MEF3069 MEF103 2N4303 2N3070 245C 2N 5163
Contextual Info: fl-Channel Junction F E T General Purpo/e Tron/i/lor/ r BVg ss Yfs •d s s T Y P E NO. m in . m in ./m a x . m in ./m a x . V GS o ff m a x. ^iss Crss NF @ 1KHz ' gss m ax. m a x. m ax. m a x. 2.5dB 2 .5dB 4 .0 d B 4 .0 d B 1.0dB 1.0dB TYPE. 0 .1 0 n A

H.264 encoder chip

Contextual Info: Techwell GET FULL DATASHEET 5D1 H264 Encoder with 4-Channel A/V Decoder & 12 Channels External VD Inputs for Security Applications TW5864B1 TW5864 is a H.264 encoder solution with integrated 4-channel analog A/V decoders. TW5864 can be used as a low cost single chip

Contextual Info: 689-5D Diodes High-Speed Center-Tapped Doubler I O Max.(A) Output Current15 V(RRM)(V) Rep.Pk.Rev. Voltage500 t(rr) Max.(s) Rev.Rec. Time500n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)10

Contextual Info: 5D400FS Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current5.0 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)15 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)15

a8j1

Contextual Info: 270 - F E T # % « 'k t§ s !S • F I M I 0 1 1 - 8 C * ± a W Ê : SHF ¡Ü Í 1 3 8 .5dBm f = 1 0 . 7 - 1 1 . 7GHz # f i : A f f i^ r a a iS è r a S GaAs FET. A 05«M U , F L M 1 1 m m m m m utfn 1 -8 D S±S ') - T ^ ^ Í S t a f f i c : SHF ttì* 3 8 . 5dBm (10 . 7— 11. 7GHz)

Contextual Info: kEv. JiTE BY A E'JN NO. 31 / ’ 2 / 0 4 CiriAy Lzn R e le a s e d DESCRIPTION B D2 / 18 / 0 4 •CjfflT Lm ADD TEST SPEC. C A w n Lee MODIFY TEST SPEC . 09 / 1 3 / 0 6 Claire Huang ADD GP MARK 1J /1 i / O b D Note : 1. A lte rn a tio n MAX; : - ' ,5dB (Insertion Loss

Contextual Info: UNCONTROLLED DOCUMENT REV. PART NUMBER REV. 0C P -P C T 4 1 1 6 / E-TR B E.C.N. NUMBER AND REVISION COMMENTS DATE SEE PAGE 1. A b s o l u t e m a x im u m r a t in g s T a = 2 5 ~ c \ SYMBOL MAX UNITS FORWARD CURRENT If 5D mA PEAK FORWARD CURRENT 1FM 1 A

NPN 1147

Contextual Info: 2SC5094 SILICQN NPN EPITAXIAL pi-ANAR t y p e t r a n s is t o r U n it in mm V H F - U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A TIO N S. • Low N oise Figure, H igh Gain. N F = 1.8dB, |S 2ieP = 7-5dB f=2G IIz M A X IM U M R ATINGS (Ta = 25°C)

Contextual Info: « B U S LW801 -0 1 5D T SMD Top View Package f t & FEATURES ÄffiS B'ramus/*y4—9 H ig h B r ig h tn e s s S m a ll S M D P a c k a g e ^ jfè APPLICATIONS B "Inìd *ic a ìto T ~ H A"m*u s esm h » rs ent cit □ Illu m in a tio n s mm L ig h tin g PRODUCT SUMMARY

LN11WP24

Abstract: CRGB-5D18 226517 rover colorimeter lens C470 C470-MC18 0mA35mA P393-ND silicon carbide LED
Contextual Info: X W i Multi-Color LED Features: Description: CRGB-5D18 is a unique LED indicator design which combines a red, green and two blue chips in a single 5mm package. This device is able to produce a wide range of colors in the visible spectrum by simply varying the