A 55 CDZ Search Results
A 55 CDZ Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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74AC11000N |
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Quadruple 2-Input Positive-NAND Gates 16-PDIP -40 to 85 |
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74AC11004DW |
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Hex Inverters 20-SOIC -40 to 85 |
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74AC11074D |
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Dual Positive-Edge-Triggered D-Type Flip-Flops With Clear and Preset 14-SOIC -40 to 85 |
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74AC11244PWR |
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Octal Buffers/Drivers 24-TSSOP -40 to 85 |
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74AC11257N |
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Quadruple 2-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 20-PDIP -40 to 85 |
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A 55 CDZ Price and Stock
ROHM Semiconductor CDZFHT2RA18BZener Diodes 17.56-18.35V 100mW SOD-923 2mA |
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CDZFHT2RA18B | 10,546 |
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ROHM Semiconductor CDZCFHT2RA6.8BESD Protection Diodes / TVS Diodes Zener Diode 6.8V 100mW Surface Mount |
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CDZCFHT2RA6.8B | 9,185 |
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ROHM Semiconductor CDZFHT2RA15BZener Diodes 14.34-14.98V 100mW SOD-923 5mA |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CDZFHT2RA15B | 8,819 |
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ROHM Semiconductor CDZFHT2RA20BZener Diodes Zener Diode 20V 100mW Surface Mount |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CDZFHT2RA20B | 7,890 |
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ROHM Semiconductor CDZFHT2RA6.8BZener Diodes 6.65-6.93V 100mW SOD-923 5mA |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CDZFHT2RA6.8B | 6,795 |
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A 55 CDZ Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SKM 145GB066D Absolute Maximum Ratings Symbol Conditions IGBT 123H $S * KL M2 C2 $S * J^L M2 C2Za $ ,5& * KLM2@ <'/&55 .- &%785& 59&(8=8&I AQQ 1 J_L D $( * `Q M2 JLQ D YQQ D b KQ 1 $S * JLQ M2 A V5 $( * KL M2 JLQ D $( * `Q M2 JQQ D YQQ D ``Q D KQQ D O PQ NNN R J^L |
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145GB066D 11Typ. | |
ci 4518
Abstract: m54518 DWAA 031345
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NA430 060J057 60453t 0I6m318 60I7m31: ci 4518 m54518 DWAA 031345 | |
Contextual Info: D-Subminiature connectors Socket connector Plug connector Zugentlastung Zugentlastung Kat 1 i U9A Kat 1 i U8A Part numbers S o c k e t c o n n e c to r N o. o f P os. 50 P lu g co n n e c to r tin p la te d s tra in re lie f CDF 50 S CDZ 50 S 162 A 1 1 9 3 9 X |
OCR Scan |
10059X 13489X 13539X 15-polig/way 25-polig/way 37-polig/way 50-polig/way 26-polig/way 44-polig/way | |
CDZ8.2BContextual Info: CDZ8.2B Zener diode CDZ8.2B Applications Constant voltage control Dimensions Unit : mm Land size figure (Unit : mm) 0.16±0.05 0.55 ② VMN2 0.156 0.37±0.03 0.35±0.1 Construction Silicon epitaxial planar 0.45 ① 1.0±0.05 Features 1) 2-pin ultra mini-mold type for high-density |
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R1120A CDZ8.2B | |
CDZ8.2BContextual Info: Zener diode CDZ8.2B Applications Constant voltage control Dimensions Unit : mm Land size figure (Unit : mm) 0.16±0.05 0.55 ② VMN2 0.156 0.37±0.03 0.35±0.1 Construction Silicon epitaxial planar 0.45 ① 1.0±0.05 Features 1) 2-pin ultra mini-mold type for high-density |
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R1120A CDZ8.2B | |
Contextual Info: AEC-Q101 Qualified Zener diode CDZFH8.2B Applications Constant voltage control Land size figure Unit : mm Dimensions (Unit : mm) 0.16±0.05 0.55 ② VMN2 0.156 0.37±0.03 0.35±0.1 Construction Silicon epitaxial planar 0.45 ① 1.0±0.05 Features |
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AEC-Q101 R1120A | |
a 55 cdz
Abstract: CDZ8.2B
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R1120A a 55 cdz CDZ8.2B | |
5 in 1 audio system circuit
Abstract: CDZ5.6B
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CDZ11BContextual Info: CDZ11B Diodes Zener diode CDZ11B zApplications Constant voltage control zDimensions Unit : mm zLand size figure (Unit : mm) 0.16±0.05 0.55 0.45 ② 1.0±0.05 ① 0.9±0.05 0.5 zFeatures 1) 2-pin ultra mini-mold type for high-density mounting (VMN2). 2) High reliability. |
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CDZ11B CDZ11B | |
Contextual Info: ESD Protection Diode CDZC6.8B zDimensions(Unit : mm ) zApplications ESD Protection zLand size figure Unit : mm zFeatures 1)Ultra small mold type. (VMN2) 2)High reliability 3)Ultra low Capacitance zConstruction Silicon epitaxial planar zStructure zTaping specifications(Unit : mm ) |
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R0039A | |
Contextual Info: CDZC6.8B Diodes ESD Protection diode CDZC6.8B zApplications ESD Protection zLand size figure zDimensions Unit : mm 0.55 0.45 0.16±0.05 zFeatures 1) Ultra small mold type. (VMN2) 2) High reliability 2) Ultra low Capacitance 1.0±0.05 0.9±0.05 0.45 0.5 0.6±0.05 |
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rohm cdz
Abstract: CDZ11B
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CDZ11BContextual Info: CDZ11B Diodes Zener diode CDZ11B Applications Constant voltage control Dimensions Unit : mm 糫 Land size figure (Unit : mm) 緫綌緱縠虒緫綌緫縕 緫綌縕縕 緫綌縑縕 緱綌緫虒緫綌緫縕 緫綌繮虒緫綌緫縕 緫綌縕 Features 1) 2-pin ultra mini-mold type for high-density |
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CDZ11B CDZ11B | |
Contextual Info: CDZFH11B Diodes AEC-Q101 Qualified Zener diode CDZFH11B zLand size figure Unit : mm zDimensions (Unit : mm) 㩷 zApplications Constant voltage control 㪇㪅㪈㪍㫧㪇㪅㪇㪌 㪇㪅㪌㪌 㪇㪅㪋㪌 㽳 㪈㪅㪇㫧㪇㪅㪇㪌 㽲 㪇㪅㪐㫧㪇㪅㪇㪌 |
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CDZFH11B AEC-Q101 | |
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CDZ11BContextual Info: CDZ11B Diodes Zener diode CDZ11B zApplications Constant voltage control zDimensions Unit : mm 㩷 zLand size figure (Unit : mm) 㪇㪅㪈㪍㫧㪇㪅㪇㪌 㪇㪅㪌㪌 㪇㪅㪋㪌 㽳 㪈㪅㪇㫧㪇㪅㪇㪌 㽲 㪇㪅㪐㫧㪇㪅㪇㪌 㪇㪅㪌 zFeatures |
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CDZ11B CDZ11B | |
Contextual Info: CDZ3.6B Diodes Zener diode CDZ3.6B Applications Constant voltage control Dimensions Unit : mm 糫 Land size figure (Unit : mm) 緫綌緱縠虒緫綌緫縕 緫綌縕縕 緫綌縑縕 緱綌緫虒緫綌緫縕 緫綌繮虒緫綌緫縕 緫綌縕 Features 1) 2-pin ultra mini-mold type for high-density |
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CDZ11B
Abstract: CDZ8.2B
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CDZ11B CDZ11B CDZ8.2B | |
Contextual Info: I S66WVE1M16BLL 3.0V Core Async/Page PSRAM Overview The IS66WVE1M16BLL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and |
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S66WVE1M16BLL IS66WVE1M16BLL 16Mbit IS66WVE1M16BLL-55BLI 48-ball IS66WVE1M16BLL-70BLI 1Mx16 48-pin | |
block diagram of schottky diode
Abstract: EDZ TE61 27B H 48 zener diode 2a 200v schottky diode DC DC converter 5v to 400V 10W zener diode Bidirectional Zener Diode Glass 15v Schottky rectifier 3A EDZ te61 15B 200v 3A schottky
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RR264M-400 RB491D A/20V) RSX101M-30 A/30V) 47P4871E block diagram of schottky diode EDZ TE61 27B H 48 zener diode 2a 200v schottky diode DC DC converter 5v to 400V 10W zener diode Bidirectional Zener Diode Glass 15v Schottky rectifier 3A EDZ te61 15B 200v 3A schottky | |
Contextual Info: Preliminary‡ 8Mb: 3.0V Core Async/Page PSRAM Memory 512K x16 Features 3.0V Core Async/Page PSRAM Memory MT45V512KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 55ns and 70ns • VCC, VCCQ voltages – 2.7–3.6V VCC |
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MT45V512KW16PEGA 16-word 48-Ball 09005aef82f4db5b 09005aef82fe568d | |
Contextual Info: Preliminary‡ 4Mb: 3.0V Core Async/Page PSRAM Memory 256 x16 Features 3.0V Core Async/Page PSRAM Memory MT45V256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 55ns and 70ns • VCC, VCCQ voltages – 2.7–3.6V VCC |
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MT45V256KW16PEGA 16-word 48-Ball D3900 09005aef832450a3 09005aef82fe568d | |
tbw 70.18
Abstract: MT45V256KW16PEGA
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MT45V256KW16PEGA 16-word 48-Ball 09005aef832450a3/Source: 09005aef82f264aa tbw 70.18 MT45V256KW16PEGA | |
Contextual Info: Preliminary‡ 4Mb: 3.0V Core Async/Page PSRAM Memory 256 x 16 Features 3.0V Core Async/Page PSRAM Memory MT45V256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 55ns and 70ns • VCC, VCCQ voltages – 2.7–3.6V VCC |
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MT45V256KW16PEGA 16-word 48-Ball 09005aef832450a3/Source: 09005aef82fe568d | |
MT45V512KW16PEGA-55WTContextual Info: 8Mb: 3.0V Core Async/Page PSRAM Memory 512K x 16 Features 3.0V Core Async/Page PSRAM Memory MT45V512KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 55ns and 70ns • VCC, VCCQ voltages – 2.7–3.6V VCC – 2.7–3.6V VCCQ |
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MT45V512KW16PEGA 16-word 48-Ball 09005aef82f264f6/Source: 09005aef82f264aa MT45V512KW16PEGA-55WT |