A 3150 Search Results

1606A

Abstract: T-1270A U-1606A T2800A T-2000B T-2210B u 1606a T-1270C T-3800A T2500A
Contextual Info: Soft Ferrites Filtering Application Fig. B Fig. A Fig. C Id Od Id Od g c d f c d h a c b b d c d h a h h b g ha Fig. E Fig. D i g a b Toroids See Fig. P/N A A A A A A A A A A A A A T-0400A T-0630A T-1000A T-1400A T-1600A T-2000B T-2500A T-2800A T-3150A T-3600A

e8020

Abstract: 9316A t100b e2811 e2506b E2506 ET3411 TR2210A E3509 ei33-13
Contextual Info: Soft Ferrites Filtering Application Fig. B Fig. A Fig. C Id Od Id Od g c d f c d h a c b b d c d h a h h b g ha Fig. E Fig. D i g a b Toroids See Fig. P/N A A A A A A A A A A A A A T-0400A T-0630A T-1000A T-1400A T-1600A T-2000B T-2500A T-2800A T-3150A T-3600A

Contextual Info: , PROGRAMMABLE CHOPPERSTABILIZED, HALL-EFFECT SWITCH The A 3150JL T and A 3150JU A program m able sw itches provide tooth/valley recognition in large gear-tooth sensing applications. E ach sensor consists o f a single elem ent, chopper-stabilized H all-effect IC

Contextual Info: TABLE 1 STYLE "A" "B" BODY GROUND PLANE TERMINAL MATED HEIGHT WITH QSH-01-DP -01 .1680[4.267] .1600[4.064] QTH-30-01-D-XX T-1G1-01-X T-1S39-01-X .1969[5.001] -02 .2861[7.267] .2781[7.064] QTH-30-02-D-XX T-1G1-02-X T-1S59-02-X .3150[8.001] E S A M TE C 5 2 0 P A R K E A S T B L V D , N E W A L B A N Y , IN 4 7 1 5 0

Contextual Info: TABLE 1 STYLE "A" "B" BODY GROUND PLANE TERMINAL MATED HEIGHT WITH QSH-01-DP -01 .1680[4.267] .1600[4.064] QTH-30-01-D-XX T-1G1-01-X T-1S39-01-X .1969[5.001] -02 .2861[7.267] .2781[7.064] QTH-30-02-D-XX T-1G1-02-X T-1S59-02-X .3150[8.001] F S A M TE C 5 2 0 P A R K E A S T B L V D , N E W A L B A N Y , IN 4 7 1 5 0

rm 6203 diagram

Contextual Info: M M O T O R O L A Military 54LS161A 4 -B it U p /D o w n C o u n ter (w ith A synchronous C lear) ELECTRICALLY TESTED PER: MIL-M-38510/31504 T h e 'L S 1 6 1 A is a h ig h -s p e e d 4 - b it s y n c h r o n o u s c o u n te r. It is e d g e trig g e r e d , s y n c h r o n o u s ly p r e s e tta b le , a n d c a s c a d a b le M S ) b u ild in g

13150FTB

Abstract: i261
Contextual Info: g M O T O R O L A Product Preview N arrow band FM Coilless D e te c to r IF Subsystem The M C 1 3150 is a narrow band FM IF su bsystem targeted at cellu la r and o th e r a na lo g a pp licatio n s. E xce lle n t high fre q u e n cy p e rfo rm a n c e is

PIR 308

Abstract: B703 UAA 3000 ilpi 031 tl 3278 15S4 dieci DIL 0m DFOC uaa 1300
Contextual Info: E X C E L lX EXCEL T O ' 3150 0 101 3252 6200 32B1 C lt f t a f F m * T e c h n o lo g y International Corp. « En sta L C .Q M M f r m e rt a i i m * ic $ M M * a u tte tta N M tfH fl. 1 500 * 0 0 » «S*D 0600 4 c h a ra d a , d w l O IL 3.500 H 1.150 i

Contextual Info: DSI110-08F Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3150¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: DSI110-16F Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.6k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3150¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: DSI110-04F Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3150¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

echelon 3120

Contextual Info: Power Line Development Support Kit PL DSK 2.3 Get a fast start designing LONWORKS power line devices A must-buy to get started with designs based on PL 3120® / 3150® / 3170 Smart Transceivers, the PL DSK includes a variety of resources to reduce your

Contextual Info: DS110-12F Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3150¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: DS110-04F Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3150¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: DS110-16F Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.6k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3150¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: DS110-08F Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3150¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: DS110-14F Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3150¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: DSI110-14F Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3150¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

PL3120

Abstract: V0 3150 optocoupler PL3150 PL-3120 atd2a SMPS A43 UCL-200 Xi 6000 Series UPS ups art 600 hp 3150
Contextual Info: Tljjm H EW LE TT » mLHM P A C K A R D 0.5 Amp Output Current IGBT Gate Drive Optocoupler Technical Data HCPL-3150 Single Channel HCPL-315J (Dual Channel) Features • 0.5 A Minimum Peak Output Current • 15 kV/|is Minimum Common Mode Rejection (CMR) at

Contextual Info: 3150 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current34 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage500 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage.60í @I(FM) (A) (Test Condition)34 @Temp. (øC) (Test Condition)25’

5STP20N8500

Abstract: 20N8500 20N850 GTO thyristor ABB 50281 abb phase control thyristors AA115 C115 Thyristor
Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 35x103 A = 1.25 V = 0.48 m Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-02 Jan. 11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

abb phase control thyristors

Abstract: 5STP20N8500
Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 35x103 A = 1.25 V = 0.48 m Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-02 Jan. 11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 52x103 A = 1.25 V = 0.48 mW Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-03 Jan. 13 • Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 8000 V = 2000 A = 3150 A = 47.5•103 A = 1.25 V = 0.48 mW Phase Control Thyristor 5STP 20N8500 Doc. No. 5SYA1072-04 Dec. 13 · Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications