A 2530 Search Results

Contextual Info: SEMiX241DH16s Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 240 Tc = 100 °C 200 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25300 A²s Tj = 130 °C 18000 A²s VRSM 1700 V VRRM 1600 V IT AV ITSM i2t SEMiX 13 sinus 180°

Contextual Info: SEMiX241DH16s Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 240 A Tc = 100 °C 200 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25300 A²s Tj = 130 °C 18000 A²s VRSM 1700 V VRRM 1600 V Chip ID ITSM i2t SEMiX 13 Tj = 130 °C

TDA2530

Abstract: s2v 8-pin IEC134 TDA2522 TDA2530Q
Contextual Info: TDA2530 TD A 2530Q RGB MATRIX PREAMPLIFIER T h e T D A 2 5 3 0 i s an in te g r a te d R G B m a t r ix p r e a m p lif ie r f o r c o lo u r te le v is io n r e c e i v e r s , in c o r p o r a tin g a m a tr ix p r e a m p lif ie r f o r R G B c a th o d e d r iv e o f th e p ic tu r e tu b e w ith

Contextual Info: H HA-2530/2535 HARRIS High Slew Rate, Wideband Inverting Am plifier DESCRIPTION FEATURES H IG H S L E W R A T E H A -2 5 3 0 and H A -2 5 3 5 are amplifiers which deliver F A S T S E T T L IN G T IM E accuracy specification W ID E PO W ER B A N D W ID T H

a2530

Abstract: a 2530 TDA25 la 4287 diagram LG TV circuits TDA2530A
Contextual Info: TDA2530 ^ RGB MATRIX PREAMPLIFIER FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N ER A L D E SC R IP TIO N - The TD A 2530 is a m onolithic RGB m atrix pream plifier fo r c o lo r TV re ceivers. It is c o n stru cte d using the F a irchild P lanar* process. The

HA-2535

Abstract: HA2535 2X10 HA-2530
Contextual Info: 3 HA-2530/2535 HARRIS High Slew Rate,Wideband Inverting Amplifier DESCRIPTION FEA TURES ± 3 2 0 V/jus H IG H S L E W R A T E 550ns F A S T S E T T L IN G T IM E H A -2 5 3 0 and H A -2 5 3 5 are amplifiers which deliver sujj accuracy specification 5MHz W ID E PO W ER B A N D W ID T H

Contextual Info: 2530-N.I PIN CONFIGURATION DESCRIPTION The 2530 is a high speed 4,096-bit Static Read-Only Memory available in a 512x8 organization. This device has TTL compatible inputs and outputs and requires+5V and -12V power supplies. A READ input controls the entry of data from the ROM into output latches.

Contextual Info: HEWLETT-PACKARD/ CMPNTS Ihft blE D HEW LETT PACKARD • 4 4 l47Sfll4 □ □Obliti 23b ■ H P A DUAL HIGH SPEED OPTOCOUPLER HCPL-2530 HCPL-2531 HCPL-4534 SC H E M A TIC ° HCPL-4534 SHIELD L - i c : load and a 5.6 kfi pull-up resistor. CTR of the -2531 is 19%

colour tv kit circuit diagram

Abstract: R1004 TDA2530 transistor r1004 V14 FAIRCHILD TDA2522 TDA2560 RGB MATRIX
Contextual Info: TDA2530 / RGB MATRIX PREAMPLIFIER FAIRCHILD LINEAR INTEGRATED CIRCUITS GE N ER A L D E SC R IP TIO N — The TD A 2530 is a m onolithic RGB m atrix pream plifier fo r c o lo r TV re ceivers. It is co n stru cte d using the Fa irchild P lanar* process. The

Contextual Info: 1 1 * * * 2 5 3 0 S erie s * * * Material : UL 9 4 V - 0 Nylon 6 / 6 C o lo r : White - cn - à - t 3 -1 ] [j] [j] [j] [j] [j] 2 .5 4 TYP.100 A B B B phi 3.40 .034 Dimension Part No. A D Dimension Part No. B A B 2530S020N00 2.540 .100 5.70(.224) 2530S120N00

YX 801 led driver 4 pins

Abstract: HIGHWAY 09a 16 PIN DIAGRAM STRA 226 STK 1000 watt power amp circuit diagram TB 2929 Ho am2911pc TRANSISTOR SUBSTITUTION ampro free transistor equivalent book 2sc TIL Display
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TV THOMPSON 29 DF 170 G

Abstract: STK 1000 watt power amp circuit diagram ERO Electronic F-48 AM9016E am29203 "evaluation board" 29ls18pc free stk ic sram book 27S28 free transistor equivalent book 2sc
Contextual Info: o& a a a a a a a n a a a a a a a a a r c ia a iia a iia a a n n a a a a a a a a a a a a a a a a a n a a a a a a a ii a a a a a a a r a a a a a a a a a a a a a a ii a a a a a a n n a a a a n a a r o iir c a a a ii a a a a a a n m a a a a a a a a n a a a a a

HIGH VOLTAGE DIODE 6kv

Abstract: ESJA25-DG ESJA25-04 ESJA25-06 ESJA25-08 ESJA25-10 ESJA25-12 ESJA25-16 ESJA25-20 ESJA25
Contextual Info: COLLMER SEMICONDUCTOR INC 74 DE 1 25307^2 GODQSME S High voltage silicon rectifier diodes 5 m A avg., up to 20 kV E S J A 2 5 -G C 1 2238792 CO LLM FR S F M T r .n N n iir T n R Twr nur r in c iî n r - i Maximum ratings M a x im u m ratings T yp e Repetitive

S-311-P-822

Abstract: 311P822-MC-110-AS-D 311P822-FC-110-AS-D 311P822-FC-110-AG-D 311P822-MC-110-AG-D 311P822-FC-110-BS-D 311P822-FC-110-AS-D4 311P822MC 311P822-MK-05 EIA-364-87
Contextual Info: REVISIONS SYMBOL DESCRIPTION DATE Released Revised per RN A-149 -A APPROVAL 11/13/07 8/22/08 Source Control Drawing SHEET REVISION STATUS SH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 REV A A A A A A A A A A A A A A A A A A A A SH 21 22 23 24 25 26

hermetic packages PCB land

Contextual Info: HCPL-2530, HCPL-2531, HCPL-4534 HCPL-0530, HCPL-0531, HCPL-0534 Dual Channel, High Speed Optocouplers Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product Description Features These dual channel optocouplers contain a pair of light

zigbee receiver block diagram

Abstract: which is the latest chip in zigbee A2530 zigbee uart CC2530 sensor ZIGBEE INTERNAL DIAGRAM
Contextual Info: 2530 System on Chip Series A2530E24CZ1 The A2530E24CZ1 is a high-performance, FCC & IC certified and ETSIcompliant connectorized radio module that incorporates the Texas Instruments CC2530 SOC with a CC2591 Range Extender, all in the industry’s smallest package: 11 x 19 x 2.5 mm. The module comes pre-loaded with

l 0534

Abstract: l2530
Contextual Info: W hnW H E W L E T T m LEM P a c k a r d Dual Channel, High Speed Optocouplers Technical Data HCPL-2530 HCPL-2531 HCPL-4534 HCPL-0530 HCPL-0531 HCPL-0534 Features Applications Description • 15 kV/|is Minimuin Common Mode Transient Immunity at VCM = 1500 V

tRPW10

Abstract: tad 2530 2530N CM3530
Contextual Info: sig n o tiB s HIGH SPEED 512x1 STATIC READ-ONLY MEMORY 2530 SILICON GATE MOS 250Û SERIES DESCRIPTION PIN CONFIGURATION Top View The 2530 is a high speed 4 ,096-bit* Static Read-Only Memory available in a 512x8 organization. This device has T T L compatible inputs and outputs and requires +5V and

Contextual Info: 1 1 * * * 2530 Series * * * Material : UL 9 4 V -0 Nylon 6/6 C o lo r : White Lock j: Ï3 -E 3 -C ] [j] [j] [j] [j] M ncn to ijl- 2 .5 4 TYP. .100 B B r+iu 3.40 .034 Dimension Part No. A D Dimension Part No. 5 A 2530S020000 2.540 .100 5.70(.224) 2530S120000

K4096

Abstract: Motorola 6830 M 2530 motorola KS 2102 intel 2101 INTEL 1404A Signetics 2518 AM9216 9316A 2627 "cross reference"
Contextual Info: S ig n e tic s Memories MOS RAMs AM D A M 2 1 01/9101 A M 2 1 11/9111 A M 2 1 12/9112 A M 2 1 0 2 /9 1 0 2 AM 9060 AM 9216 AM 9208 A M 1402 A M 1403 A M 1404 A M 1405 A M 1506 A M 1507 A M 2806 A M 280 7 AM 2808 AM 2809 AM 2833 MOS M E M O R Y CROSS R E FER EN C E

2N3350

Abstract: T052 2N3680 2S307 TIS23 transistor t05 2N2060 2N2223 2N2223A 2S306
Contextual Info: Silicon Transistors Type Case No. c ^ o *“ 3= 0 Maxim um Ratings at25°C amb. FEATURES 2 C c <u o “ O P N P C h o p p er SP E C IA L Characteristics ' h FE V CB V CE V EB V V V 'c A Min. P .o, w mA V C E SA T ) fT Max. *C Min. mA M c/s 25306 T05 A -6

Diode BAY 46

Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a

AM9216

Abstract: IM7780 AM2111 IM7552 9316A AM9208 signetics 2524 2102 ram fairchild AM9060 Signetics 2518
Contextual Info: S ig n e tic s M em ories M O S RAMs AMD A M 2 1 01/9101 A M 2 1 11/9111 A M 2 1 12/9112 A M 2 1 02/ 9 10 2 AM 9060 AM 9216 AM 9208 AM 1402 A M 1403 A M 140 4 AM 1405 A M 150 6 A M 1507 A M 2806 AM 2807 AM 2808 AM 2809 AM 2833 M O S M EM O R Y C RO SS R E FE R E N C E

2530N

Contextual Info: S ig n e tic s Memories - M O S R O M S 2530 — 4096 Bit High Speed Static MOS ROM 512 x 8 G E N E R A L D E S C R IP T IO N T he 2 5 3 0 has a read input w hich con trols the entry of data from the R O M into o u tp u t latches. Three-state outputs allow O R -ty in g for im plem enting larger memories. T w o mask