A 2200- 001 Search Results

AH201

Abstract: JESD22-A114 J-STD-020A LLQ1608 16132
Contextual Info: AH201 The Communications Edge TM Medium Power, High Linearity Amplifier Product Features Product Information Product Description • 50 – 2200 MHz Functional Diagram The AH201 is a 1-Watt driver amplifier that offers excellent dynamic range in a low-cost, 6 x 6 mm 10-pin

MXJ-2201-7

Contextual Info: MXJ-2201-7 SURFACE MOUNT MIXER Features • • • • • Frequency Range: LO & RF 1 – 2200 MHz, IF 10 – 600 MHz L.O. Drive : +7 dBm Industry Standard SMT package Available in Tape-and -Reel Low Cost Description The MXJ-2201-7 is a low-medium drive level, surface mount mixer

BLF6G22-180PN

Contextual Info: BLF6G22-180PN Power LDMOS transistor Rev. 02 — 23 April 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

BLF6G22-45

Abstract: BLF6G22S-45 ROGERS DUROID
Contextual Info: BLF6G22S-45 Power LDMOS transistor Rev. 02 — 17 April 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

C4532X7R1E475M

Abstract: AVX12065C224K BLF6G22LS-130 GRM217BR71H104KA11L RO4350B capacitor 220 uf
Contextual Info: BLF6G22LS-130 Power LDMOS transistor Rev. 01 — 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Contextual Info: QHD-2N-2.1G QUAD HYBRID REV: 001, 06/01/04 TECHNICAL DESCRIPTION FEATURES • 1.8 - 2.5 GHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • SURFACE MOUNT APPLICATIONS • WCDMA BASE STATION RF SUBSYSTEMS • SATCOM The Multi-Mix QHD series provides a 3 dB 90° coupling with low insertion loss, low VSWR, and high

Contextual Info: CSD-30BH-2.5G DIRECTIONAL COUPLER REV: 001, 06/01/04 TECHNICAL DESCRIPTION FEATURES • 2.0 - 3.0 GHz • LOW LOSS • HIGH ISOLATION • EXCELLENT PHASE/AMPLITUDE BALANCE • SURFACE MOUNT APPLICATIONS • WCDMA BASE STATION RF SUBSYSTEMS • SATCOM The Multi-Mix CSD series provides a 30 dB coupling with low insertion loss, low VSWR, and high

AD8202WYC-P7

Contextual Info: FEATURES FUNCTIONAL BLOCK DIAGRAMS NC A1 A2 +VS 7 3 4 6 AD8202 100kΩ G = x10 G = ×2 +IN A1 –IN +IN 8 –IN 1 +IN A2 –IN 5 10kΩ 200kΩ 200kΩ 04981-001 10kΩ 2 APPLICATIONS NC = NO CONNECT INDUCTIVE LOAD CLAMP DIODE 5V OUTPUT +IN BATTERY NC +VS OUT

400MG

Abstract: "pressure sensor" Honeywell Silicon Pressure Sensor
Contextual Info: TruStability Board Mount Pressure Sensors: NSC Series– Uncompensated/Unamplified DESCRIPTION The TruStability NSC Series-Uncompensated/Unamplified is a piezoresistive silicon pressure sensor offering a ratiometric analog output for reading pressure over the specified full scale

butt splices

Contextual Info: ATP - Tooling Kit- 19288-0017 Crimp Tooling Specification Sheet ATP Tooling Kit No. 19288-0017 Engineering No. ATP-A-710 SCOPE Tooling: ATP Tooling Kits used with Molex Air Tape Press: ATP 100 and 300 series or a Molex Mylar Tape Applicator (MTA series). Refer to the appropriate tool instruction manual for installation and operation information.

powerex cd

Abstract: thyristor 2200A prx taa thyristor switch
Contextual Info: b4E D H M E O • 7 2 c14tiSl DGOS'm 32b « P R X FG2200AH-xxD T POWEREX INC Powerex, Inc., Hillia Street, Youngwood, Pennsylvania 15697 412 825-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Man», France(43) 72.75.15 Asymmetric De-Alloy

MXJ-2201-10

Contextual Info: MXJ-2201-10 SURFACE MOUNT MIXER Features • • • • • Frequency Range: LO & RF 50 – 2200 MHz, IF 10 – 600 MHz L.O. Drive : +10 dBm Industry Standard SMT package Available in Tape-and -Reel Low Cost Description The MXJ-2201-10 is medium drive level, surface mount mixer

DD-561

Abstract: MALLORY 150 CAPACITORS capacitor 1000 MF 25v 4700 mf 100v MALLORY CAPACITORS cgs series Mallory Start Capacitors DDM-103 capacitor 200V 820 MF DD330 3300 mf 35v
Contextual Info: 1234567890123456789012345 1234567890123456789012345 1234567890123456789012345 1234567890123456789012345 CAP ACIT ORS CAPACIT ACITORS 1234567890123456789012345 RADIAL PC LEAD ALUMINUM ELECTROLYTIC CAPS 85° C 20% tolerance Volts Capacitance (mF) 10v 330, 470, 1000, 1200, 2200, 3300, 6800 mF

Contextual Info: I&Q SUB-HARMONIC MODULATORS 8 p in RF OUTPUT FREQUENCY - R elay H eader NOMINAL CARRIER POWER CONVERSION LOSS dB (MHz) (dBm) 8 1 0 -8 3 0 825 - 875 869 - 894 935 - 970 4 0 5 -4 1 5 4 1 2 -4 3 8 434 - 447 467 - 485 1000-1070 1200-1280 1400-1500 1500-1650

BLF2043F

Abstract: BP317 enamelled copper wire
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2043F UHF power LDMOS transistor Preliminary specification 2000 Oct 19 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2043F PINNING - SOT467C FEATURES • High power gain PIN DESCRIPTION

47pF 50V NPO

Contextual Info: 1733 Reader's Spreadspg189-328:1570 Reader's Spreadspg189-328 1/27/09 4:58 PM Page 46 NPO, X5R, X7R, Y5V ceramic chip capacitors EU features • • • • High Q factor Low T.C.C. Available in high capacitance values up to 100 µF Products with lead-free terminations meet

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Registered Hex ECL/TTL Translator M C 10H 605 M C 100H 605 The MC10/100H605 is a 6 -b it, registered, dual supply ECL to TTL translator. The device features differential ECL inputs for both data and clock. The TTL outputs feature balanced 24mA sink/source capabilities for

C771

Abstract: C771L C771LA C771LB C771LC C771LD C771LE C771LM C771LS C-771
Contextual Info: INVERTER THYRISTO R C771 77mm / 2800V / 100us Type C771 reverse blocking thyristor is suitable for inverter applications.The silicon junction is manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate structure. It is supplied in an industry accepted disc-type package, ready to mount using commercially available

95n4f

Abstract: 95n4f3 STD95N4F3
Contextual Info: STB95N4F3, STD95N4F3 STP95N4F3 N-channel 40 V, 5.0 mΩ, 80 A STripFET III Power MOSFET in D²PAK, DPAK, TO-220 Features Order codes VDSS RDS on max. Pw ID TAB TAB STB95N4F3 STD95N4F3 40 V STP95N4F3 < 5.8 m Ω 80 A TAB 110 W < 6.2 mΩ 3 1 • Standard threshold drive

Varistor y5s

Abstract: TLF12UA B 102 capacitor Radial Capacitor Y5S tlf25 BB 50-70 capacitor Y5S TLF12UB TLF12U
Contextual Info: • LEADED EMC COMPONENTS FER R ITE BEADS AXIAL AND RADIAL LEAD Impedance £2 min Part Number F B A 0 3 B B B -0 0 35 F B A 0 4 O H H -0 0 45-90 Dimensions ln./ mm W ,b D L max D C Resistance Rated Current (A) max (Q ) max 0.01 7.0 .098±.008 (2.5±0.2) .177±.0012

EMK105B

Abstract: k107 K063 K0630 J682D K105B
Contextual Info: "It Class 2 STANDARD MULTILAYER CERAMIC CAPACITORS CLASS2 :HIGH DIELECTRIC CONSTANT TYPE) B OPERATING TEMP. B/BJ —25—+85°C X7R - 5 5 - + 125°C X5R - 5 5 - + 85°C F —25— h85”C Y5V - 3 0 - + 85°C < 2 - Im p ro ve H ig h e r M ountin g Densities.

CW 7805

Abstract: CW 7805 regulator ERA-H-30275-4-1-2304 LM7805 7805 datasheet DD 127 D TRANSISTOR free download voltage regulator 7805 data sheet LM 7805 DATA SHEET uA 7805 365 pF variable capacitor
Contextual Info: PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description Features The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and

SPT315

Abstract: 1117a SPT315DB SPT315DD SPT315DK
Contextual Info: SPT315 100mm THYRIST OR THYRISTO 2500V / 4700A Type SPT315 thyristor is optimized especially for pulse power and static transfer switch applications for which lowest on-state voltage is achieved. The silicon junction design utilizes a second generation pilot gate and a unique orientation of emitter shorts which promote the lateral expansion of conducting

lo1b

Abstract: lo1a thermal simulation of IC package MAX3781 MAX3781UCM Dual 4-1 MUX
Contextual Info: 19-1697; Rev 1; 8/00 2.75Gbps Dual Mux/Buffer Operating from a single +3.3V supply, this device accepts CML or AC-coupled PECL inputs and provides CML outputs. The outputs can be AC-coupled for compatibility with PECL inputs if needed. The MAX3781 is packaged in a compact 48-pin 7x7mm TQFP exposedpaddle package and typically consumes 1.2W power.