A 2160 Search Results

POWER AMP. PAL 007 B

Abstract: TAA550 PAL 007 E TCA 3089 TDA audio amplifier circuits TCA 3189 tda audio amplifier amplifier 2.1 system with tda TDA HI-FI TDA audio power amplifier
Contextual Info: LINEAR INTEGRATED CIRCUITS c o n ti n u e d TYPE D E S C R IP T IO N PACKAGE TV circuits T A A 5 5 0 /T B A 2 7 1 T D A 440 T D A 1170 T D A 1170S/SH T D A 1180 T D A 1190Z T D A 1251 TD A 1270 TD A 1470 TD A 1670* T D A 2140 T D A 2150 TD A 2160 T D A 2190

MEK350-02DA

Contextual Info: □ IXYS MEK350-02DA Preliminary Data Fast Recovery Epitaxial Diode FRED Module ^R S M ^R R M Type 200 V 200 V MEK350-02DA Symbol U ' favm U rm UsM 503 356 1800 A A A TVJ = 45° C 2400 2640 2160 2380 A A A A t t t t TVJ = 45° C = = = = t t t t TVj = 150°C

Contextual Info: SEMIKRON SKiiP 292 GD 170 - 372 WT Absolute Maximum Ratings Symbol |Conditions1 V a lu e s Units 1700 1200 250 500 - 5 5 . . . + 150 4000 230 500 2160 23,4 V V A A °C V A A A kA2S 18 30 75 - 2 5 . . . + 85 V V kV/|xs °C IGBT & Inverse Diode V ces V c c 101

SKiiP 613 GB

Contextual Info: s e MIKRO n SKiiP 202 GD 120 - 300 WT Absolute Maximum Ratings Symbol | Conditions Values Units 1200 900 200 400 - 55 . . . + 150 3000 5 200 400 2160 23,4 V V A A °C V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/|±s 1> IGBT & Inve rse Diode V ces V is o |4)

Contextual Info: Û13bb71 0 D0 L S3 Û _ 4 24 SKiiP 362 GDL 060 - 453 WT 12 Absolute Maximum Ratings Symbol | Conditions Values Units 600 400 300 600 - 4 0 . + 150 2500 300 600 2160 23,4 V V A A °C V A A A kA2s 18 30 75 V V kV/ is °C 1) IGBT & Inve rse Diode V ces Operating DC link voltage

semikron skiip 342 GDL

Abstract: semikron skiip 342
Contextual Info: s e MIKROn SKiiP 342 GPL 120 - 411 CTV E/A A b s o lu te M a x im u m R a tin g s S ym bol | C o n d itio n s 11 V a lu e s U nite 1200 900 300 - 40 . + 150 3000 5) 300 600 2160 23,4 V IGBT & Inverse Diode V ces V c c 9) lc T |3) Visd 41 If Ifm Ifsm A (Diode)

semikron skiip 342

Abstract: skiip gH 120
Contextual Info: se MIKRD n SKIIP 342 GH 120 - 211 CTV Absolute Maximum Ratings Symbol | C onditions 11 V a lu e s Untts 1200 900 300 - 4 0 . . + 150 3 0 0 0 61 300 600 2160 23,4 V V A °C V A A A kA2s IG BT & Inverse Diode V ces V c c 9» lc T i 3> V 1soi 4 If If m If s m

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information T 2160 N C HK G ø3,5+0,1 deepth = 2+0,2 on both sides A A HK A 4,8 x 0,8 DIN 46 244 A 2,8 x 0,8 DIN 46 244 G 8,5 max VWK Nov. 1996 T 2160 N Elektrische Eigenschaften Höchstzulässige Werte

Contextual Info: Conditions 1> V iso , 4 AC, 1min Operating —I /> Q Symbol —I o Ü SKiiP 292 GH 170 - 273 CTV Absolute Maximum Ratings / SKiiPPACK Values stor. tem perature Units 4000 V -25.+85 °C 1700 1200 250 -40.+150 250 500 2160 23 V V A °C A A A kAs2 18 30

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information T 2160 N C HK G ø3,5+0,1 deepth = 2+0,2 on both sides A A HK A 4,8 x 0,8 DIN 46 244 A 2,8 x 0,8 DIN 46 244 G 8,5 max VWK Nov. 1996 T 2160 N Elektrische Eigenschaften Höchstzulässige Werte

Contextual Info: C o n d itio n s 1> Viso, 4 AC, 1min Operating / stor. tem perature /— >I Q Sym bol 0—I SKiiP 3-phase bridge Absolute Maximum Ratings SKiiPPACK Values Units 4000 V -25.+85 °C 1700 1200 V V 250 -40.+150 250 500 2160 23 A °C A A A kAs2 IGBT and Freewheeling Diode

diode 476 k

Contextual Info: SEMIKRON SKilP 292 GPL 170 - 476 CTV Absolute Maximum Ratings Symbol Values |Conditions1' Units IG B T & Inverse Diode VcES Vcc 9; lc T|3> Visot 4'' If Ifm Ifsm f t Diode V V A °c V A A A kA2s 1700 1200 250 40 . + 150 3500 250 500 2160 23,4 Operating D C link voltage

Contextual Info: Data Sheet 60 MHz Analog Oscilloscope with Probes Model 2160A B&K Precision's model 2160A is a high performance oscilloscope with many features at a low cost. The model 2160A includes a built in component tester, which is an excellent tool for in circuit troubleshooting. This oscilloscope is built by and backed by B&K Precision, a company that has been

TCD1200D

Abstract: TCD1200 TCD-12
Contextual Info: TCD1200D TENTATIVE The TCD1200D is a high sensitive and low dark current 2160 elements image sensor. The sensor can be used for facsimile, imagescanner and OCR, The device contains a row of 2160 photodiodes, which provide a 8 lines/mm (200 DPI) resolution

Contextual Info: C o n d itio n s 1> vV ¡sol 4> AC, 1 min —I Operating Q Sym bol —I o o SKiiP 3-phase bridge Absolute Maximum Ratings / SKiiPPACK Values Units 3000 V -25.+85 °C 1200 900 300 -40.+150 300 600 2160 23 V V A °C A A A kAs2 18 30 20 75 V V kHz kV/us stor. tem perature

ars-2160

Abstract: ARS-2320 68pin SCSI connector ARS 68 sata hard drive a 2160 2160
Contextual Info: Quick Installation Guide of ARS-2160/ARS-2320 Section 1 Introduction 1.1 Overview ARS-2160/ARS-2320 is a SCSI-to-SATA II bridge. Through its connection to a SCSI host 68-pin connector the bridge can turn a 2.5'' hard drive into one with LVD SCSI efficiency. Thus, you can

ARS-2160H

Abstract: ARS-2320H 2160H sata hard drive SCA-2 sata connector datasheet HARD DRIVE ARS-2320 SCA2 scsi to sata
Contextual Info: Quick Installation Guide of ARS-2160H/ARS-2320H Section 1 Introduction 1.1 Overview ARS-2160H/ARS-2320H is a SCSI-to-SATA II bridge. Through its connection to a SCSI host SCA2 80-pin connector the bridge can turn a 2.5'' hard drive into one with LVD SCSI efficiency. Thus,

5sya2020

Abstract: A125 B125 C125
Contextual Info: VDRM VDSM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = = 5600 6500 1370 2160 21.9x103 1.18 0.632 V V A A A V mΩ Phase Control Thyristor 5STP 12K6500 Doc. No. 5SYA1069-01 May 04 • Patented free-floating silicon technology • Low on-state and switching losses

abb s 212

Abstract: C 2335-0
Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 1370 A 2160 A 21900 A 1.18 V 0.632 mΩ Ω Phase Control Thyristor 5STP 12K6500 Doc. No. 5SYA1069-01 June 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 1370 A = 2160 A = 21.9x103 A = 1.18 V = 0.632 m Phase Control Thyristor 5STP 12K6500 Doc. No. 5SYA1069-03 June 12 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = = = = = = 6500 V 1370 A 2160 A 31•103 A 1.18 V 0.632 mW Phase Control Thyristor 5STP 12K6500 Doc. No. 5SYA1069-05 Nov. 13 · Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 1370 A = 2160 A = 21.9x103 A = 1.18 V = 0.632 m Phase Control Thyristor 5STP 12K6500 Doc. No. 5SYA1069-03 Jan.11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 1370 A = 2160 A = 31.5•103 A = 1.18 V = 0.632 m Phase Control Thyristor 5STP 12K6500 Doc. No. 5SYA1069-06 Mar. 14 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = = = = = = 6500 V 1370 A 2160 A 33•103 A 1.18 V 0.632 m Phase Control Thyristor 5STP 12K6500 Doc. No. 5SYA1069-04 Aug. 13 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications