A 1908 TRANSISTOR Search Results

TRANSISTOR REPLACEMENT ECG

Abstract: ECG Semiconductors transistor 171 DO-40 diode ECG190 ECG1906
Contextual Info: PHILIPS E C G INC ECG Semiconductors 17E ECG 1902, ECG1906, ECG 1908 / 3-Terminal, Positive Fixed V R .200 ' Features • Output current of 100 m A • Internal thermal overload protection • Output transistor safe area protection • Internal short circuit current limit

ANSI/TIA/EIA-644

Abstract: DS90LV032A MAX9124 MAX9125 MAX9125ESE MAX9125EUE MAX9126 MAX9126EUE
Contextual Info: 19-1908; Rev 0; 5/01 KIT ATION EVALU E L B A AVAIL Quad LVDS Line Receivers with Integrated Termination Features ♦ Integrated Termination Eliminates Four External Resistors MAX9126 ♦ Pin Compatible with DS90LV032A ♦ Guaranteed 500Mbps Data Rate ♦ 300ps Pulse Skew (max)

TDA1908A

Abstract: A 1908 transistor a830s BA810S 1908A
Contextual Info: S G S-THOMSON 07E » | 7=12^537 O O là S b â 0 | 7929225 S G S SEMICONDUCTOR CORP F ' ~ TDA1908 LINEAR INTEGRATED CIRCUITS 8W AUDIO A M P LIFIER The T D A 1908 is a monolithic integrated circuit in 12 lead quad In-line plastic package Intended for low

MAX9126

Contextual Info: 19-1908; Rev 0; 5/01 KIT ATION EVALU E L B A AVAIL Quad LVDS Line Receivers with Integrated Termination Features ♦ Integrated Termination Eliminates Four External Resistors MAX9126 ♦ Pin Compatible with DS90LV032A ♦ Guaranteed 500Mbps Data Rate ♦ 300ps Pulse Skew (max)

A 1908 transistor

Abstract: FE55-0005
Contextual Info: L-Band Voltage Controlled Oscillator Features VCC N/C N/C 1 GND N/C GND RF OUT GND N/C The FE55-0005 is ideally suited for use as a stand-alone signal source or as part of a PLL signal source for applications in L-Band. The FE55-0005 includes active transistor

phase shifter

Contextual Info: RO-P-DS-3069 A Preliminary Information MAPCGM0001 1.0-1.9 GHz Phase Shifter MAPCGM0001 Features ♦ ♦ ♦ ♦ ♦ ♦ 1.0 to 1.9 GHz Operation 6 Bit Phase Shifter 360º Coverage, LSB = 5.6º TTL Control Inputs Self-Aligned MSAG MESFET Process 6mm, 28 Lead, FQFP-N Package

Contextual Info: RO-P-DS-3047 B Preliminary Information MAAMGM0002-DIE MAAMGM0002-DIE 1.0 – 18.0 GHz 0.1W Distributed Amplifier Features ♦ ♦ ♦ ♦ 0.1 Watt Saturated Output Power Level 1.0 to 18.0 GHz Operation Select-at-Test Biasing Self-Aligned MSAG MESFET Process

Contextual Info: RO-P-DS-3047 C Preliminary Information MAAMGM0002-DIE MAAMGM0002-DIE 1.0 – 18.0 GHz 0.1W Distributed Amplifier Features ♦ ♦ ♦ ♦ ♦ 0.1 Watt Saturated Output Power Level 1.0 to 18.0 GHz Operation 4 dB Typical Noise Figure Select-at-Test Biasing Self-Aligned MSAG MESFET Process

Contextual Info: RO-P-DS-3005 A Preliminary Information MA03503D 8.0-11.0 GHz Parallel Input Gain/Phase Control MMIC MA03503D Features ♦ ♦ ♦ ♦ ♦ 6-bit Phase Shifter and 5-bit Attenuator Parallel Control Input 50 Ω Input and Output Impedance GaAs MSAG Process

Contextual Info: RO-P-DS-3076 Preliminary Information MAAPGM0040 11.0-15.0 GHz 0.5W Power Amplifier MAAPGM0040 Features ♦ 0.5 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ GaAs MSAG Process APGM0040 YWWLLLL Primary Applications ♦ Point-to-Point Radio

apgm

Abstract: APGM0038
Contextual Info: RO-P-DS-3060 C Preliminary Information MAAPGM0038 MAAPGM0038 8.0-12.0 GHz 1.2W Power Amplifier Features ♦ ♦ ♦ ♦ 1.2 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation Self-Aligned MSAG MESFET Process High Performance Ceramic Bolt Down Package

APGM0030

Contextual Info: RO-P-DS-3074 Preliminary Information MAAPGM0030 MAAPGM0030 5.0-9.0 GHz 1W Power Amplifier Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ GaAs MSAG Process APGM0030 YWWLLLL Primary Applications ♦ Multiple Band Point-to-Point Radio

APGM0035S

Abstract: M567 tb
Contextual Info: RO-P-DS 3088 Preliminary Information MAAPGM0035S 2.5-5.5 GHz 1.6 W Power Amplifier Features ♦ ♦ ♦ ♦ MAAPGM0035S 2.5-5.5 GHz GaAs MMIC Amplifier 1.6 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation MSAG MESFET Process High Performance Ceramic Bolt Down Package

Contextual Info: RO-P-DS-3014 A Preliminary Information MAAPGM0027-DIE 2.0-4.0 GHz 1W Power Amplifier MAAPGM0027-DIE Features ♦ ♦ ♦ ♦ 1 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability

Contextual Info: RO-P-DS-3072 A Preliminary Information MAAPGM0041 11.0-15.0 GHz 1.3W Power Amplifier MAAPGM0041 Features ♦ ♦ ♦ ♦ 1.3 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process High Performance Ceramic Bolt Down Package

apgm

Contextual Info: RO-P-DS-3073 A Preliminary Information MAAPGM0019 9.8-13.0 GHz 1.6W Power MAAPGM0019 Features ♦ 1.6 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ GaAs MSAG MESFET Process Primary Applications ♦ 11 GHz Point-to-Point Radio

Contextual Info: RO-P-DS-3072 B Preliminary Information MAAPGM0041 11.5-15.0 GHz 1.0W Power Amplifier MAAPGM0041 Features ♦ ♦ ♦ ♦ 1.3 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process High Performance Ceramic Bolt Down Package

MAAPGM0036

Abstract: APGM0036 CR-15 MAAPG
Contextual Info: RO-P-DS-3075 Preliminary Information MAAPGM0036 1.2-3.2 GHz 1.2W Power Amplifier MAAPGM0036 Features ♦ 1.2 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ Self-Aligned MSAG Process Primary Applications ♦ ♦ ♦ ♦

Contextual Info: Advance Information RO-P-DS-3085 MAAPGM0052-DIE MAAPGM0052-DIE 4.0-18.0 GHz Distributed Power Amplifier Features ♦ ♦ ♦ ♦ 0.5 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability

Contextual Info: RO-P-DS-3077 Preliminary Information MAAPGM0029 3.6-6.5 GHz 1W Power Amplifier MAAPGM0029 Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ GaAs MSAG Process APGM0029 YWWLLLL Primary Applications ♦ Wireless Local Loop

MAAPGM0030-DIE

Contextual Info: RO-P-DS-3021 A Preliminary Information MAAPGM0030-DIE 5.0-9.0 GHz 1W Power Amplifier MAAPGM0030-DIE Features ♦ ♦ ♦ ♦ 1 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability

phase shifter

Contextual Info: RO-P-DS-3081 Preliminary Information MAPCGM0002 3.5-6.0 GHz Phase Shifter MAPCGM0002 Features ♦ ♦ ♦ ♦ ♦ 6 Bit Phase Shifter 360º Coverage, LSB = 5.6º TTL Control Inputs Self-Aligned MSAG MESFET Process 6mm, 28 Lead, FQFP-N Package Description

Contextual Info: Preliminary Datasheet RO-P-DS-3084 MAAMGM0007-DIE 2.0-18.0 GHz Distributed Amp/Gain Block MAAMGM0007-DIE Features ♦ ♦ ♦ ♦ ♦ 0.25 Watt Saturated Output Power Level Single Bias Operation Variable Drain Voltage 4-6V Operation GaAs MSAG Process Proven Manufacturability and Reliability

APGM0022

Abstract: CR-15
Contextual Info: RO-P-DS-3078 A Preliminary Information MAAPGM0022 3.5-6.0 GHz 1.6W Power Amplifier MAAPGM0022 Features ♦ ♦ ♦ ♦ 1.6 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation Self-Aligned MSAG MESFET Process High Performance Ceramic Bolt Down Package