A 1908 TRANSISTOR Search Results

A 1908 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini	Datasheet
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet

A 1908 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TRANSISTOR REPLACEMENT ECG Abstract: ECG Semiconductors transistor 171 DO-40 diode ECG190 ECG1906 Contextual Info: PHILIPS E C G INC ECG Semiconductors 17E ECG 1902, ECG1906, ECG 1908 / 3-Terminal, Positive Fixed V R .200 ' Features • Output current of 100 m A • Internal thermal overload protection • Output transistor safe area protection • Internal short circuit current limit	OCR Scan	ecg1902 ecg1906 ecg1908 t--58--11--13 +4transistor replacement ecg ecg semiconductors transistor 171 do-40 diode ecg190	PDF
ANSI/TIA/EIA-644 Abstract: DS90LV032A MAX9124 MAX9125 MAX9125ESE MAX9125EUE MAX9126 MAX9126EUE Contextual Info: 19-1908; Rev 0; 5/01 KIT ATION EVALU E L B A AVAIL Quad LVDS Line Receivers with Integrated Termination Features ♦ Integrated Termination Eliminates Four External Resistors MAX9126 ♦ Pin Compatible with DS90LV032A ♦ Guaranteed 500Mbps Data Rate ♦ 300ps Pulse Skew (max)	Original	max9126 ds90lv032a 500mbps 300ps +8tia/eia-644 max9125eue max9125ese max9126eue max9126ese ansi/tia/eia-644 max9124 max9125	PDF
TDA1908A Abstract: A 1908 transistor a830s BA810S 1908A Contextual Info: S G S-THOMSON 07E » \| 7=12^537 O O là S b â 0 \| 7929225 S G S SEMICONDUCTOR CORP F ' ~ TDA1908 LINEAR INTEGRATED CIRCUITS 8W AUDIO A M P LIFIER The T D A 1908 is a monolithic integrated circuit in 12 lead quad In-line plastic package Intended for low	OCR Scan	tda1908 tda1908a a 1908 transistor a830s +2ba810s 1908a	PDF
MAX9126 Contextual Info: 19-1908; Rev 0; 5/01 KIT ATION EVALU E L B A AVAIL Quad LVDS Line Receivers with Integrated Termination Features ♦ Integrated Termination Eliminates Four External Resistors MAX9126 ♦ Pin Compatible with DS90LV032A ♦ Guaranteed 500Mbps Data Rate ♦ 300ps Pulse Skew (max)	Original	max9126 ds90lv032a 500mbps 300ps +3tia/eia-644 max9125/max9126 250mhz	PDF
A 1908 transistor Abstract: FE55-0005 Contextual Info: L-Band Voltage Controlled Oscillator Features VCC N/C N/C 1 GND N/C GND RF OUT GND N/C The FE55-0005 is ideally suited for use as a stand-alone signal source or as part of a PLL signal source for applications in L-Band. The FE55-0005 includes active transistor	Original	fe55-0005 fqfp-16 as55-0005 a 1908 transistor	PDF
phase shifter Contextual Info: RO-P-DS-3069 A Preliminary Information MAPCGM0001 1.0-1.9 GHz Phase Shifter MAPCGM0001 Features ♦ ♦ ♦ ♦ ♦ ♦ 1.0 to 1.9 GHz Operation 6 Bit Phase Shifter 360º Coverage, LSB = 5.6º TTL Control Inputs Self-Aligned MSAG MESFET Process 6mm, 28 Lead, FQFP-N Package	Original	ro-p-ds-3069 mapcgm0001 mapcgm0001-smb phase shifter	PDF
Contextual Info: RO-P-DS-3047 B Preliminary Information MAAMGM0002-DIE MAAMGM0002-DIE 1.0 – 18.0 GHz 0.1W Distributed Amplifier Features ♦ ♦ ♦ ♦ 0.1 Watt Saturated Output Power Level 1.0 to 18.0 GHz Operation Select-at-Test Biasing Self-Aligned MSAG MESFET Process	Original	ro-p-ds-3047 maamgm0002-die	PDF
Contextual Info: RO-P-DS-3047 C Preliminary Information MAAMGM0002-DIE MAAMGM0002-DIE 1.0 – 18.0 GHz 0.1W Distributed Amplifier Features ♦ ♦ ♦ ♦ ♦ 0.1 Watt Saturated Output Power Level 1.0 to 18.0 GHz Operation 4 dB Typical Noise Figure Select-at-Test Biasing Self-Aligned MSAG MESFET Process	Original	ro-p-ds-3047 maamgm0002-die	PDF
Contextual Info: RO-P-DS-3005 A Preliminary Information MA03503D 8.0-11.0 GHz Parallel Input Gain/Phase Control MMIC MA03503D Features ♦ ♦ ♦ ♦ ♦ 6-bit Phase Shifter and 5-bit Attenuator Parallel Control Input 50 Ω Input and Output Impedance GaAs MSAG Process	Original	ro-p-ds-3005 ma03503d	PDF
Contextual Info: RO-P-DS-3076 Preliminary Information MAAPGM0040 11.0-15.0 GHz 0.5W Power Amplifier MAAPGM0040 Features ♦ 0.5 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ GaAs MSAG Process APGM0040 YWWLLLL Primary Applications ♦ Point-to-Point Radio	Original	ro-p-ds-3076 maapgm0040 apgm0040 100pf	PDF
apgm Abstract: APGM0038 Contextual Info: RO-P-DS-3060 C Preliminary Information MAAPGM0038 MAAPGM0038 8.0-12.0 GHz 1.2W Power Amplifier Features ♦ ♦ ♦ ♦ 1.2 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation Self-Aligned MSAG MESFET Process High Performance Ceramic Bolt Down Package	Original	ro-p-ds-3060 maapgm0038 apgm0038 100pf +1apgm	PDF
APGM0030 Contextual Info: RO-P-DS-3074 Preliminary Information MAAPGM0030 MAAPGM0030 5.0-9.0 GHz 1W Power Amplifier Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ GaAs MSAG Process APGM0030 YWWLLLL Primary Applications ♦ Multiple Band Point-to-Point Radio	Original	ro-p-ds-3074 maapgm0030 apgm0030 100pf	PDF
APGM0035S Abstract: M567 tb Contextual Info: RO-P-DS 3088 Preliminary Information MAAPGM0035S 2.5-5.5 GHz 1.6 W Power Amplifier Features ♦ ♦ ♦ ♦ MAAPGM0035S 2.5-5.5 GHz GaAs MMIC Amplifier 1.6 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation MSAG MESFET Process High Performance Ceramic Bolt Down Package	Original	maapgm0035s apgm035s apgm0035s m567 tb	PDF
Contextual Info: RO-P-DS-3014 A Preliminary Information MAAPGM0027-DIE 2.0-4.0 GHz 1W Power Amplifier MAAPGM0027-DIE Features ♦ ♦ ♦ ♦ 1 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability	Original	ro-p-ds-3014 maapgm0027-die 10reform	PDF

Contextual Info: RO-P-DS-3072 A Preliminary Information MAAPGM0041 11.0-15.0 GHz 1.3W Power Amplifier MAAPGM0041 Features ♦ ♦ ♦ ♦ 1.3 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process High Performance Ceramic Bolt Down Package	Original	ro-p-ds-3072 maapgm0041 apgm0041 100pf	PDF
apgm Contextual Info: RO-P-DS-3073 A Preliminary Information MAAPGM0019 9.8-13.0 GHz 1.6W Power MAAPGM0019 Features ♦ 1.6 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ GaAs MSAG MESFET Process Primary Applications ♦ 11 GHz Point-to-Point Radio	Original	ro-p-ds-3073 maapgm0019 apgm0019 apgm	PDF
Contextual Info: RO-P-DS-3072 B Preliminary Information MAAPGM0041 11.5-15.0 GHz 1.0W Power Amplifier MAAPGM0041 Features ♦ ♦ ♦ ♦ 1.3 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process High Performance Ceramic Bolt Down Package	Original	ro-p-ds-3072 maapgm0041 apgm0041 100pf	PDF
MAAPGM0036 Abstract: APGM0036 CR-15 MAAPG Contextual Info: RO-P-DS-3075 Preliminary Information MAAPGM0036 1.2-3.2 GHz 1.2W Power Amplifier MAAPGM0036 Features ♦ 1.2 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ Self-Aligned MSAG Process Primary Applications ♦ ♦ ♦ ♦	Original	ro-p-ds-3075 maapgm0036 apgm0036 100pf +2cr-15 maapg	PDF
Contextual Info: Advance Information RO-P-DS-3085 MAAPGM0052-DIE MAAPGM0052-DIE 4.0-18.0 GHz Distributed Power Amplifier Features ♦ ♦ ♦ ♦ 0.5 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability	Original	ro-p-ds-3085 maapgm0052-die	PDF
Contextual Info: RO-P-DS-3077 Preliminary Information MAAPGM0029 3.6-6.5 GHz 1W Power Amplifier MAAPGM0029 Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ GaAs MSAG Process APGM0029 YWWLLLL Primary Applications ♦ Wireless Local Loop	Original	ro-p-ds-3077 maapgm0029 apgm0029 100pf	PDF
MAAPGM0030-DIE Contextual Info: RO-P-DS-3021 A Preliminary Information MAAPGM0030-DIE 5.0-9.0 GHz 1W Power Amplifier MAAPGM0030-DIE Features ♦ ♦ ♦ ♦ 1 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability	Original	ro-p-ds-3021 maapgm0030-die	PDF
phase shifter Contextual Info: RO-P-DS-3081 Preliminary Information MAPCGM0002 3.5-6.0 GHz Phase Shifter MAPCGM0002 Features ♦ ♦ ♦ ♦ ♦ 6 Bit Phase Shifter 360º Coverage, LSB = 5.6º TTL Control Inputs Self-Aligned MSAG MESFET Process 6mm, 28 Lead, FQFP-N Package Description	Original	ro-p-ds-3081 mapcgm0002 mapcgm0002-smb phase shifter	PDF
Contextual Info: Preliminary Datasheet RO-P-DS-3084 MAAMGM0007-DIE 2.0-18.0 GHz Distributed Amp/Gain Block MAAMGM0007-DIE Features ♦ ♦ ♦ ♦ ♦ 0.25 Watt Saturated Output Power Level Single Bias Operation Variable Drain Voltage 4-6V Operation GaAs MSAG Process Proven Manufacturability and Reliability	Original	ro-p-ds-3084 maamgm0007-die	PDF
APGM0022 Abstract: CR-15 Contextual Info: RO-P-DS-3078 A Preliminary Information MAAPGM0022 3.5-6.0 GHz 1.6W Power Amplifier MAAPGM0022 Features ♦ ♦ ♦ ♦ 1.6 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation Self-Aligned MSAG MESFET Process High Performance Ceramic Bolt Down Package	Original	ro-p-ds-3078 maapgm0022 apgm0022 100pf +1cr-15	PDF

A 1908 TRANSISTOR Search Results

A 1908 TRANSISTOR Result Highlights (5)

A 1908 TRANSISTOR Datasheets Context Search

TRANSISTOR REPLACEMENT ECG

ANSI/TIA/EIA-644

TDA1908A

MAX9126

A 1908 transistor

phase shifter

apgm

APGM0030

APGM0035S

apgm

MAAPGM0036

MAAPGM0030-DIE

phase shifter

APGM0022