A 1441 Search Results

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Abstract: TBA1441 TBA440 TBA1440 tba1440g la 78140 demodulateur SCHEMA NT7740 TBA440P
Contextual Info: THOMSON-EFCIS . tbai44og TBA1441 Integrated Circuits V ID EO IF AMPLIFIERS A M P L IF IC A T EU R S FI V ID EO VID EO IF AMPLIFIERS A M P L IF IC A T EU R S FI V ID EO The integrated circuits TB A 14 4 0 G and TB A 1441 perform the same functions and are interchangeable. The following advantages can be provided :

Contextual Info: HM51441OB/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi H M 51441 OB/BL is a CMOS dynamic R A M o rg a n iz e d 1,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1441 OB/BL h as re a liz e d h ig h e r d en sity , h ig h e r p e rfo rm a n c e and v a rio u s fu n c tio n s by

86092645113755000E1

Abstract: 5159.035.32.12.93.11 RPI43G20R5G00 PI43G2RTA10P1
Contextual Info: DIN 41612 Index of catalogue numbers References 3013.M.10.C1 5011.C4 5011.E5.8.Y3.13.A 5011.E5.8.Y3.23.A 5011.E6.8.Y3.13.A 5011.E6.8.Y3.23.A 5011.F1.8.V1.13.B/H 5011.F1.8.V1.23.B/H 5011.F2.8.V1.12 5011.F2.8.V1.22 5011.P 5042.MP.1441.N0.14 5042.MP.1441.N0.24

ba1440

Abstract: BA1441 TBA1440 BA1440/BA1441
Contextual Info: t f - T * tfffl I C / I C s for Audio Applications ROHM‘CO LTD B A 1 4 4 0 B A 1 4 4 1 4QE BA 1440/A 1441 D • 7 f l 2 f l 1 cn F M / A M - I F :> 7sx A + F M DOG MSS 3 4 B R H M T ; i / ^ 7 ° 1/^ F M / A M - IF S y s te m -h F M S te re o M u ltip lexer T -77*o5-o7

Contextual Info: R EV > DCO 144148 COIL: 25°C 170 OHMS ± RESISTANCE C US T O ME R D A T A S H E E T 10% 18.0 VDC NOMINAL VOLTAGE BLUE BE AD- |_ “ 7 9 . 7 VDC MUST O P E R A T E B1 1.15 VDC MUST R E L E A S E SHOCK _ 5 0 . \ jA3 B 3 ^ \ X 2 C ^ ^ 9 B2 ENVIRONMENT:

audio amplifier pcb layout

Abstract: AN-1441 CR43 LM4951 LM4962 MBR0520 TLA09ZZA 10w audio amplifier
Contextual Info: National Semiconductor Application Note 1441 Nisha Patel April 2006 Introduction 15Vpp typ BTL, per channel, to a 2µF+30Ω load with less than 1% THD+N from a 3.2VDC power supply. The LM4962 features a low power consumption shutdown mode, an internal thermal shutdown protection mechanism, over current

Contextual Info: . 335 SQ. MAX. . 385 M A X . 017!; §8? D I A . L_ 10 P I N S ,370 SQ. REV. A DCO COIL: MAX. 144146 @ 25 C RESISTANCE NOMINAL CUSTOMER 100 OHMS _ OPERATE MUST RELEASE 3.5 VDC ENVIRONMENT: VIBRATION SHOCK TERMINAL 10 Hz _ 3 0 _ TO 9 *• -55 TEMPERATURE

Contextual Info: . 335 SQ. MAX. . 385 M A X . 017!; §8? D I A . L_ 10 P I N S ,370 SQ. REV. A DCO COIL: MAX. 144146 @ 25 C RESISTANCE NOMINAL CUSTOMER 850 OHMS _ 12 VOLTAGE MUST OPERATE MUST RELEASE 9 .0 VDC VIBRATION TERMINAL 10 Hz _ 3 0 _ TO 9 *• -55 TEMPERATURE

Contextual Info: 1441-0607 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60ö V(BR)CBO (V)70 I(C) Max. (A)150 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1441-1010 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)150 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1441-1210 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)150 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1441-0807 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80ö V(BR)CBO (V)90 I(C) Max. (A)150 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1441-1207 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)150 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1441-0610 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60ö V(BR)CBO (V)70 I(C) Max. (A)150 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1441-1205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)150 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

DIC22

Contextual Info: _ CYM1441 SEMICONDUCTOR 256K x 8 Static RAM Module F eatures F unctional D escription • T h e C Y M 1441 is a very h ig h p e rfo rm a n c e 2 -m e g ab it s ta tic R A M m o d u le o rg a n iz e d as 256K w ords by 8 bits. T h e m o d u le is c o n ­

E4041

Contextual Info: _ CYM1441 ^ SEMICONDUCTOR 256K x 8 Static RAM Module Features Functional Description • T h e CYM 1441 is a very high perform ance 2-m egabit static R A M m odule organized as 256K words by 8 bits. T h e m odule is con­ structed using eight 256K x 1 static R A M s

Contextual Info: 1441-0410 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40ö V(BR)CBO (V)50 I(C) Max. (A)150 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1441-0405 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40ö V(BR)CBO (V)50 I(C) Max. (A)150 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

MC14419

Abstract: binary encoder 1R2E MC14408
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 14419 2-of-8 Keypad-to-Binary Tone Encoder CMOS The MC14419 is designed for phone and dialer system applications, but finds many applications as a keypad-to-blnary encoder. The device contains a 2-of-8 to binary encoder, a strobe generator, and an illegal state detector. The encoder has

Contextual Info: 1441-1007 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)150 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1441-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)150 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1441-0605 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60ö V(BR)CBO (V)70 I(C) Max. (A)150 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1441-0810 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80ö V(BR)CBO (V)90 I(C) Max. (A)150 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)