A 144 TRANSISTOR Search Results

DTA144WL/DTA144WA/DTA144WV

Contextual Info: DTA144WU/DTA144WK/DTA144WS/DTA144WF DTA144WL/DTA144WA/DTA144WV h -7 > V 7. £ /Transistors DTA DTA DTA 144 W U / D T A 144 W K / D T A 144W S 144 W F / D T A 144 W L / D T A 144 W A 144 W V KStrt • y-^/T ransistor Switch t Digital Transistors (Includes Resistors

RA80H1415M1

Contextual Info: < Silicon RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 144- to 148-MHz

M306K7F8LRP

Contextual Info: Rev.1.0 Description Mitsubishi microcomputers M16C / 6K7 Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description The M16C/6K7 144-pin version group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 144-pin plastic molded

Contextual Info: Datasheet R1Q4A4436RBG, R1Q4A4418RBG 144-Mbit DDR II SRAM 2-word Burst R10DS0146EJ0101 Rev.1.01 Nov 18, 2013 Description The R1Q4A4436RBG is a 4,194,304-word by 36-bit and the R1Q4A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

Contextual Info: 156-144 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)150 I(C) Max. (A)15 Absolute Max. Power Diss. (W)115 Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

4n25 optocoupler

Abstract: METAL DETECTOR using microcontroller IN5245B Multivibrator 74HC00 4N25 MSAN-144 MT8841 microcontroller relay interfacing 74HC14 NAND GATE EARTH FAULT detector circuit using OP-AMP
Contextual Info: Application Note MSAN-144 Applications of the MT8841 Calling Number Identification Circuit ISSUE 1 CONTENTS • Introduction • Applications • How it Works • A Three Pin Interface • General Requirements • Data Transmission Methods and Message Formats

Contextual Info: NDP605AEL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)10 I(D) Max. (A)48 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)144 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)-65õ

Contextual Info: SSM3J332R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSVI SSM3J332R ○Power Management Switch Applications +0.08 0.05 M A 144 mΩ (max) (@VGS = -1.8 V) 72.0 mΩ (max) (@VGS = -2.5 V) 50.0 mΩ (max) (@VGS = -4.5 V) 42.0 mΩ (max) (@VGS = -10 V)

Contextual Info: Datasheet R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit QDR II SRAM 4-word Burst R10DS0141EJ0100 Rev.1.00 Jun 01, 2013 Description The R1Q3A4436RBG is a 4,194,304-word by 36-bit and the R1Q3A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

Contextual Info: Datasheet R1Q2A4436RBG, R1Q2A4418RBG 144-Mbit QDR II SRAM 2-word Burst R10DS0140EJ0100 Rev.1.00 Sep 02, 2013 Description The R1Q2A4436RBG is a 4,194,304-word by 36-bit and the R1Q2A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

Contextual Info: NDP605AL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)10 I(D) Max. (A)48 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)144 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)-65õ

Contextual Info: NDP606AEL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)10 I(D) Max. (A)48 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)144 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)-65õ

SSM3J332R

Contextual Info: SSM3J332R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSVI SSM3J332R ○Power Management Switch Applications +0.08 0.05 M A 144 mΩ (max) (@VGS = -1.8 V) 72.0 mΩ (max) (@VGS = -2.5 V) 50.0 mΩ (max) (@VGS = -4.5 V) 42.0 mΩ (max) (@VGS = -10 V)

RELAY-DPDT

Abstract: Multivibrator 74HC00 IN5245B IN4004 diode data sheet DPDT relay 12v fsk to RS-232 converter 4n25 application note 5V 1A DPDT RELAY lcd timing controller IN4004
Contextual Info:  Application Note MSAN-144 Applications of the MT8841 Calling Number Identification Circuit ISSUE 1 CONTENTS • Introduction • Applications • How it Works • A Three Pin Interface • General Requirements • Data Transmission Methods and Message Formats

4n25 optocoupler

Abstract: IN5245B 74hc164 microcontroller relay interfacing Relay QF Philips Electrolytic Capacitor 22uf 250v 4N25 MSAN-144 MT8841 TRTSY-000507
Contextual Info: Application Note MSAN-144 Applications of the MT8841 Calling Number Identification Circuit ISSUE 1 CONTENTS • Introduction • Applications • How it Works • A Three Pin Interface • General Requirements • Data Transmission Methods and Message Formats

IN5245B

Abstract: transistor u8 2w 5V 1A DPDT RELAY relay logic for elevator control circuit 4N25 MSAN-144 MT8841 EARTH FAULT detector circuit using OP-AMP octal optocoupler
Contextual Info: Application Note MSAN-144 Applications of the MT8841 Calling Number Identification Circuit ISSUE 1 CONTENTS • Introduction • Applications • How it Works • A Three Pin Interface • General Requirements • Data Transmission Methods and Message Formats

Contextual Info: NDP606AL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)10 I(D) Max. (A)48 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)144 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)-65õ

IN5245B

Abstract: 4n25 optocoupler Transistor a235 MSAN-144 fsk to RS-232 converter IN524 74HC123 timing Multivibrator 74HC00
Contextual Info:  Application Note MSAN-144 Applications of the MT8841 Calling Number Identification Circuit ISSUE 1 CONTENTS • Introduction • Applications • How it Works • A Three Pin Interface • General Requirements • Data Transmission Methods and Message Formats

74HC14 B1

Abstract: MC1488 hex 4N25 MSAN-144 MT8841 IN5245B 74hc14 GS Transistor a235
Contextual Info:  Application Note MSAN-144 Applications of the MT8841 Calling Number Identification Circuit ISSUE 1 CONTENTS • Introduction • Applications • How it Works • A Three Pin Interface • General Requirements • Data Transmission Methods and Message Formats

Contextual Info: SSM3J332R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSVI SSM3J332R ○Power Management Switch Applications +0.08 0.05 M A 144 mΩ (max) (@VGS = -1.8 V) 72.0 mΩ (max) (@VGS = -2.5 V) 50.0 mΩ (max) (@VGS = -4.5 V) 42.0 mΩ (max) (@VGS = -10 V)

FMC5A

Contextual Info: Transistors Digital Transistor Dual Digital Transistors for Power Management U M C 5 N / F M C 5 A •F e a tu re s ►External dimensions (Units: mm) 1 ) Two digital transistors, DTA143X and D T Z 144 E , in th e sam e size package as the UMT and SMT. U M C 5N

Contextual Info: N AUER PHILIPS/DISCRETE bTE D Philips Components • bbSaiai OQBQEfiD =144 BGY112A/112B/112C Data sheet status Preliminary specification date of issue May 1991 VHF amplifier modules PINNING - SOT288C DESCRIPTION A range of RF power amplifier modules designed for use in

transistor tt 2222

Abstract: D2l10 BLV33F transistor rf vhf G37 IC
Contextual Info: N AHER PHILIPS/DISCRETE bTE D • b b S B 'J a i J □ G 2 Û R ei 7 144 IAPX BLV33F V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear v.h.f. amplifiers fo r television transmitters and transposers.

FZJ 131

Abstract: MSM51C256 MSM51C256-10 MSM51C256-12 MSM51C256-8 MSM51C256RS dynamic ram binary cell
Contextual Info: O K I semiconductor MSM51C256RS/JS • 7= - a .* - A S " * 262, 144 W ORD X 1-BITS DYNAM IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The