A 144 TRANSISTOR Search Results

DTA144WL/DTA144WA/DTA144WV

Contextual Info: DTA144WU/DTA144WK/DTA144WS/DTA144WF DTA144WL/DTA144WA/DTA144WV h -7 > V 7. £ /Transistors DTA DTA DTA 144 W U / D T A 144 W K / D T A 144W S 144 W F / D T A 144 W L / D T A 144 W A 144 W V KStrt • y-^/T ransistor Switch t Digital Transistors (Includes Resistors

Contextual Info: Datasheet R1Q4A4436RBG, R1Q4A4418RBG 144-Mbit DDR II SRAM 2-word Burst R10DS0146EJ0101 Rev.1.01 Nov 18, 2013 Description The R1Q4A4436RBG is a 4,194,304-word by 36-bit and the R1Q4A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

4n25 optocoupler

Abstract: METAL DETECTOR using microcontroller IN5245B Multivibrator 74HC00 4N25 MSAN-144 MT8841 microcontroller relay interfacing 74HC14 NAND GATE EARTH FAULT detector circuit using OP-AMP
Contextual Info: Application Note MSAN-144 Applications of the MT8841 Calling Number Identification Circuit ISSUE 1 CONTENTS • Introduction • Applications • How it Works • A Three Pin Interface • General Requirements • Data Transmission Methods and Message Formats

Contextual Info: Datasheet R1Q3A4436RBG, R1Q3A4418RBG 144-Mbit QDR II SRAM 4-word Burst R10DS0141EJ0100 Rev.1.00 Jun 01, 2013 Description The R1Q3A4436RBG is a 4,194,304-word by 36-bit and the R1Q3A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

Contextual Info: Datasheet R1Q2A4436RBG, R1Q2A4418RBG 144-Mbit QDR II SRAM 2-word Burst R10DS0140EJ0100 Rev.1.00 Sep 02, 2013 Description The R1Q2A4436RBG is a 4,194,304-word by 36-bit and the R1Q2A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

MT8841

Abstract: IN5245B how to interface microcontroller to optocoupler 4N25 MSAN-144 74HC00 B1 capacitor 2u2
Contextual Info: Application Note MSAN-144 Applications of the MT8841 Calling Number Identification Circuit ISSUE 1 CONTENTS • Introduction • Applications • How it Works • A Three Pin Interface • General Requirements • Data Transmission Methods and Message Formats

Contextual Info: N AUER PHILIPS/DISCRETE bTE D Philips Components • bbSaiai OQBQEfiD =144 BGY112A/112B/112C Data sheet status Preliminary specification date of issue May 1991 VHF amplifier modules PINNING - SOT288C DESCRIPTION A range of RF power amplifier modules designed for use in

XC95144

Contextual Info: Lowest Price Per Macrocell In The Density Sweet Spot 13.1 cents $0.140 11.1 cents $0.120 8.7 cents Price Per Macrocell* $0.100 $0.080 $0.060 $0.040 $0.020 $- *100+ Unit List Price Xilinx XC95144 Vendor A 144 Macrocells 128 Macrocells Source: Arrow Electronics Web Page, 4/29/98

mac 7a8 transistor

Contextual Info: a DSP Microcomputer ADSP-2192M ADSP-2192M DUAL CORE DSP FEATURES 320 MIPS ADSP-219x DSP in a 144-Lead LQFP Package with PCI, USB, Sub-ISA, and CardBus Interfaces 3.3 V/5.0 V PCI 2.2 Compliant 33 MHz/32-bit Interface with Bus Mastering over Four DMA Channels with

2192M

Abstract: 8052c 16K24 ADSP2192M ADSP-2192M EP10 0x0456 usb 8052
Contextual Info: a DSP Microcomputer ADSP-2192M ADSP-2192M DUAL CORE DSP FEATURES 320 MIPS ADSP-219x DSP in a 144-Lead LQFP Package with PCI, USB, Sub-ISA, and CardBus Interfaces 3.3 V/5.0 V PCI 2.2 Compliant 33 MHz/32-bit Interface with Bus Mastering over Four DMA Channels with

PSR 368e-7

Abstract: MELCHER SWITCHING REGULATOR Melcher M 1000 PSS249 melcher k 4000 converter MELCHER PSL 248
Contextual Info: Switching Regulators 19" Switching Regulators 19" 5.1 4 Rugged Environment Output [A] 8 12 16 20 25 5.2 4 8 Output [A] 12 16 20 25 Product Family Case Page PSL L04 5-2 PSS S01 5 - 13 PSK K01 5 - 25 3 5 Output [V DC] 12 15 24 36 48 5 Input [V DC] 10 40 60 80 144

transistor power rating 5w

Abstract: 2SC2118
Contextual Info: 2 s c 2118 CON NPN EPITAXIAL PLANAR TRANSISTOR O 144~ 1 « * æ * * œ Recommended f o r Low V oltage ü ( 1 0~ 1 4V ) . ft x m m INDUSTRIAL APPLICATIONS 1 4 4 ~ 175MHz Band P o w e r A m p l i f i e r A p plica tion s Un i t : mm ¿9.39 MAX ° ttìÎ) 5 W ( M i n •) , i K 't t i m m

144111P

Abstract: MC144110-MC144111 144110P
Contextual Info: MOTOROLA O rd e r th is d o c u m e n t by M C 14 411 0/D SEMICONDUCTOR TECHNICAL DATA D igital-to-A nalog Converters w ith Serial In terface M C 144110 M C 144 111 CMOS LSI T he M C 144110 and MC144111 are lo w -c o s t 6 - b it D/A con verters with serial

Contextual Info: M ITSUBISHI R F POW ER MODULE M 57737 1 4 4 — 1 4 8 M H z , 2 5 W , FM FOR M O B ILE RAD IO A P P LIC A TIO N DESCRIPTION M 57737 O U TLIN E DRAWING is a thick film D irn t'i.s .o n s m RF power module specifically designed for 144 ~ 14 8 M H z, 25W FM mobile radios.

Contextual Info: DIGITRON SEMICONDUCTORS 2N489-2N494, A, B NPN SILICON UNIJUNCTION TRANSISTOR Silicon unijunction transistors are three-terminal device having a stable “N” type negative resistance characteristic over a wide temperature range. FEATURES • • • • •

2SC1600

Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
Contextual Info: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is

Contextual Info: DIGITRON SEMICONDUCTORS 3N209-3N210 N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS MAXIMUM RATINGS Rating Symbol Value Unit Drain – source voltage VDS 25 Vdc Drain gate voltage VDG1 VDG2 30 Vdc Gate current IG1R IG1F IG2R IG2F -10 10 -10 10 mAdc Drain current – continuous

UJT 2N4871

Contextual Info: DIGITRON SEMICONDUCTORS 2N4870-2N4871 PN UNIJUNCTION TRANSISTORS MAXIMUM RATINGS Rating RMS power dissipation 1 RMS emitter current Peak pulse emitter current (2) Symbol Value Unit PD 300 mW Ie 50 mA ie 1.5 Amp Emitter reverse voltage VB2E 30 Volts Interbase voltage †

Contextual Info: DIGITRON SEMICONDUCTORS MPU6027-MPU6028 PROGRAMMABLE UNIJUNCTION TRANSISTORS Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Contextual Info: DIGITRON SEMICONDUCTORS MPU131-MPU133 PROGRAMMABLE UNIJUNCTION TRANSISTORS Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

PD57002

Abstract: PD57002S AN1294 0137 0904 907 TRANSISTOR smd
Contextual Info: PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V • NEW RF PLASTIC PACKAGE

9S12XHZ512

Abstract: 9S12XHZ256 9s12xhz256 144 9S12XHZ384 cluster stepper motor MC9S12XHZ512 CPU12X S12XHZ512 32x4 9S12XHZ
Contextual Info: Fact Sheet 9S12XHZ Family Single chip solution for instrument cluster Overview The MC9S12XHZ512 MCU is the industry's first instrumentation cluster MCU featuring an integrated thin-film transistor TFT display drive capability. The S12XHZ family is complemented by the

f0602

Abstract: CS101 "Single-Port RAM"
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20210-2E Semicustom CMOS Standard Cell CS101 Series • DESCRIPTION CS101 series, a 90 nm standard cell product, is a CMOS ASIC that satisfies user’s demands for lower power consumption and higher speed. The leakage current of the transistors is the minimum level in the industry. Three

Contextual Info: DIGITRON SEMICONDUCTORS MFE211 – MFE212 N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSX 20 Vdc Drain Gate Voltage VDG1 VDG2 35 35 Vdc Gate Current IG1 IG2 ±10