A 1060 14 EQUIVALENT Search Results

photodioda

Abstract: N10-13 laser rca rca 210 C30895
Contextual Info: 1GE D • I 74fi4b75 D D O D i n A INC/ ELECTRO OPTICS VICil H I Photodiode C30895 DATASHEET Silicon Avalanche Photodiode Optimized for High Responsivity and Very Low Noise at 1060 Nanometers ■ Noise Equivalent Pow er NEP a t 1060 n m — 7.5 x 1 0 14 W /Hz1'2 max.

Contextual Info: E G & G/CANADA/OPTOELEK ID î • 3ü30blü G O O O i n ItC ilElectro 123 M C A N A T-W S i Photodiode C30895 DATA SHEET Optics Silicon Avalanche Photodiode Optimized for High Responsivity and Very Low Noise at 1060 Nanometers ■ Noise Equivalent Power NEP at 1060 nm — 7.5 x 1 0 14 W/Hz1/2 max.

tic 1060

Abstract: rca 923 C30895 5252 F led rca 514 5252 F 5252 S RCA 411
Contextual Info: E G & G/CANADA/OPTOELEK BDBDbl D O O O O i n ID <123 H C A N A T-W-Si Photodiode R G i l Optics C30895 D A TA S H E ET Silicon Avalanche Photodiode Optim ized fo r High Responsivity and V e ry Lo w Noise at 1060 Nanom eters • Noise Equivalent Power NEP a t 1060 nm — 7.5 x 1 0 14 W/Hz1/2 max.

PerkinElmer tr 1700

Abstract: PerkinElmer Avalanche Photodiode
Contextual Info: Features and Benefits PerkinElmer’s new family of APD modules features built in amplifier and thermoelectric cooler. They are ideal for demanding LIDAR and range-finding applications. Ultra low noise equivalent power NEP Introduction The new LLAM series of avalanche

tef 6624

Abstract: SEG382 Hitachi DSA002733 1301H
Contextual Info: HD66763 384-channel Segment Driver with Internal RAM for 256-color Displays Rev.1.0 July, 2001 Description The HD66763, 384-channel segment driver LSI, displays 128RGB-by-176-dot graphics on STN displays in 256 colors. It is for driving STN color LCD displays to a maximum of 128RGB by 176

scr tic 1060

Abstract: tic 1060 BH 1060 TSI 568 HD6432655F REJ09B0331-0500 CMOS HD6432653 HD6472655F BCRH HD6432653
Contextual Info: REJ09B0331-0500 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. H8S/2655 Group 16 Hardware Manual

free transistor equivalent book

Abstract: Nippon capacitors japan transistors book
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

smooth l 7251 3.1

Abstract: gk71 tef 6624 l 7251 wd S-E26 GK 105 Hitachi DSAUTAZ006 SEG270 gk43 c 1060
Contextual Info: —PRELIMINARY— HD66763 384-channel Segment Driver with Internal RAM for 256-color Displays n o ti Preliminary Specification Rev.0.4 January, 2001 a c fi i c e Description Sp The HD66763, 384-channel segment driver LSI, displays 128RGB-by-176-dot graphics on STN

Contextual Info: E G & G/CANADA/OPTOELEK ID D WM il ÆM E l e c t r o Im lf#IO p t i c s 30 3 0 b l D D O D O I B ^ 711 H C A N A Photodiode7^Vhi7 C30919E DATA SH EET Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module

C30919E

Abstract: avalanche photodiode bias photodiode amplifier rise time avalanche photodiode
Contextual Info: JJ^EG sG CANADA LTD. Optoelectronics Division Formerly ItGJl Effective January 1,1991 tro :ics Photodiode C30919E DATA SHEET U Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module

ELLS 110

Abstract: avalanche photodiode bias avalanche photodiode preamplifier voltage C30919E
Contextual Info: E G & G/CANADA/OPTOELEK 1 3D30blD DDDDIB^ 711 « C A N A WM MWk ÆWElectro I i l i # Ph o to d io d e Hhil C30919E DATA SH EET • Optics Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module

Ignitron

Abstract: ignitron philips A 1060 14 equivalent 7L120 ,ignitron philips Ignitron 5552 a Ignitron 5552 Scans-0018000 pl5552 PL5552A
Contextual Info: PHILIPS PL 5552 Water cooled IGNITRON IGNITRON à refroidissement par l'eau Wassergekühltes IGNITRON Application: A.C. control; two tubes in inverse parallel connection will control 1200 kVA at 250 600 V and 1060 kVA at 220 V Power rectification; for energy storage of

tic 1060

Contextual Info: G E ELECTRO OPTICS R C il IQ D 3Ö741S4 □□0013e 1 « G E E O PhotodiodeHhbl C30919E DATASHEET Optics Photodlode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module • Responsivity Temperature Compensated to +10% for 1060 nm

RCA 014

Abstract: emitter "1060 nm" C30974E rca linear "photodiode " 011 photodiode Avalanche photodiode avalanche photodiode bias
Contextual Info: E G & G/CANADA/OPTOELEK IO 3D3ühlD DDDD157 737 • CANA ItCilE T - H - Î 7 Si Photodiode C30974E DATA SHEET Optics Rectangular Silicon Avalanche Photodiode Preamplifier Module ■ Responsivity at TA = 25°C 3.7 x 10s V/W at 900 ran — 1.8 x 10s V/W at 1060 mn

C30817E

Abstract: SILICON APD Pre-Amplifier
Contextual Info: DATASHEET Photon Detection C30659 Series 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules Key Features E C -1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.

ST T8 1060

Abstract: ST T4 1060 l0741 L0148 1090mhz ATC100A300JP
Contextual Info: STAC1011-350 LDMOS avionics radar transistor Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 350 W with 15 dB gain over 1030 1090 MHz ■ ST Air Cavity / STAC package Description

L1128

Abstract: L038 1030-1090MHz
Contextual Info: STAC1011-350 RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 350 W with 15 dB gain over 1030 1090 MHz ■

Contextual Info: 3M Wiremount Socket .100” x .100” for .050” Pitch Cable Optional Plastic or Metal Strain Relief 3000 Series • Industry standard IDC socket • Positive locking metal “J” clips provide high cover retention • Mates with 3M headers, plugs and pin strips for quick

TS-0718-F

Abstract: 3443-94
Contextual Info: 3M Wiremount Socket .100” x .100” for .050” Pitch Cable Optional Plastic or Metal Strain Relief 3000 Series • Industry standard IDC socket • Positive locking metal “J” clips provide high cover retention • Mates with 3M headers, plugs and pin strips for quick connect/

C30950E

Abstract: C30950EL C30950 equivalent C30817 30950G RCA Solid State C30950 C30902 C30902E
Contextual Info: ELECTRO OPTICS R C IDE D /1 m Electro O ptics and Devices 3Û741S4 □□OODMM 1 m GEEO _ T ' - H l - io ~ J Solid State Detectors Developmental Types C30950 Series Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic

TO-18CAN

Contextual Info: 8255271 SILONEX S ILO N E X 73C U 0 2 4 6 IN C 73 INC DE | Ô 5 S S 5 7 1 OaaOELlb 1 _ r - *} " S 3 - D 'SÏLONEX NSL-530 PIN PHOTODIODE FEATURES NSL-530 • Low Operating Voltage, V r = 45 V • Anti-Reflection Coated to Enhance Responsivity at 900 nm • Spectral Response Range, 400 to

Rf amplifier with frequency 1150 MHZ 20 db gain

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10150 . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak

376B

Abstract: MRF10150 MRF10500
Contextual Info: Order this document by MRF10150/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10150 . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz

tic 1060

Contextual Info: E G & G/C ANADA/OPTOELEK ID 303Qb]>a DOOGIGI 7^3 « C A N A Photodiode i t e i C30807, C30808, C30809 Optics E ,e c t n o l C30810, C30822, C30831 DATA SHEET V l ’ S " 3 N-Type Silicon p-i-n Photodetectors L-571 C30810 1-568 C30807 C30831 C30808 C30809,