A 103 M TRANSISTOR Search Results

CHDTC115GKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC115GKGP SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE MARKING GKD Emitter .103 2.64 .086 (2.20)

CHDTA143TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA143TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA125TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA125TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTB143TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTB143TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 500 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA124GKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA124GKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE .103 2.64 .086 (2.20) .028 (0.70) .020 (0.50)

ic resistor 103

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA143TKPT SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

GE 047 TRANSISTOR

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC114GKPT SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE .103 2.64 .086 (2.20) .028 (0.70) .020 (0.50)

Contextual Info: [ s O OPTOELECTRONICS I— PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCHES ? D EÌ ? + ►j T£4- : 3 15- r 103 :2 6 NCM 122 2 l 0 1 1 t 28-J 17 A p ertu re Test M ax W id th C o n d itio n s ’ c (ONI (m A b v ceo W id th (V) R a tin g Num ber (m m ) L E D /S en so r

S1F diode

Abstract: EF941 SI2400-FS BYS32
Contextual Info: Si2400 V. 22 B I S I S O M O D E M W I T H I N T E G R A T E D G L O B A L D A A Features Integrated DAA 2400 bps: V.22bis z Capacitive Isolation z 1200 bps: V.22, V.23, Bell 212A z Parallel Phone Detect z 300 bps: V.21, Bell 103 z Globally Compliant Line Interface

2T301

Abstract: 2SB121 2T302 sw-149 2T304 kc 103 p 2S131 2T303
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

UNR5210G

Abstract: UNR5211G UNR5212G UNR5213G UNR5214G UNR5215G UNR5216G UNR5217G UNR5218G UNR5219G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR521xG Series Silicon NPN epitaxial planar type For digital circuits • Package • Costs can be reduced through downsizing of the equipment and reduction of the number of parts

2T301

Abstract: a49a OC26 OC26 transistor 2S131 2SB121 2SB128A 2T302 2T303 2T304
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : • M -EiiO SW H E New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. W e hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

UNR9110G

Abstract: UNR9114G UNR9111G UNR9112G UNR9113G UNR9115G UNR9116G UNR9117G UNR9118G UNR9119G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR911xG Series Silicon PNP epitaxial planar type For digital circuits • Package ■ Features • Code SSMini3-F3 • Pin Name 1: Base 2: Emitter 3: Collector

Contextual Info: ?<¥tEREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KS621K20 Sfngle Darlington Transistor Module 200 Amperes/1000 Volts 100 101 102 C O M M O N E M IT TER O U T PU T C H A R A C T E R IS T IC S (T YPICAL) SATU RATIO N V O L T A G E

SC1741

Abstract: 2SD2172 gy-80 DTA144EF DTC123JF DTA143ZF 2sc2062c DTD143EF DTD114EF DTC144EL
Contextual Info: S -y y y X £ /Transistors h ^ > y ^ ^ S f nnp l C O i'T i975^Â> e h ^ v ^ r o n u g i i a f é L S : u f c ^ , SiÎD0n ^ iC Î, / : - a r ii? ÎÇ l; ÎD ^ | lr o c r ^ ig Î5 f e l U L , Ä S l í J f A í í ' r y O W r t ik • SPT 4 ± 0 .2 2 .0 ± 0 .2

NJ99

Abstract: NJ132 NJ16 TMPF4858A TMPF4859 TMPF4859A TMPF4860A TMPF4861 TMPF4861A TMPF4867
Contextual Info: ^3 SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE. D 13 A 5 Q Q 003 b i o T " | i • flS SEMICONDS / ICS 93D 03610 3> 7 ^-Z.f-Z.S SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh V(BR]GSS Min. (V) TMPF4858A

Contextual Info: MITSUBISHI IGBT MODULES CM75DY-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of two IGBTs in a half-bridge configu­ ration with each transistor having

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR511x Series (UN511x Series) Silicon PNP epitaxial planar type (0.425) Unit: mm For digital circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 M Di ain sc te

Contextual Info: MITSUBISHI TRANSISTOR MODULES 1 j QM50E2Y/E3Y-2H | MEDIUM POWER SWITCHING USE _ INSULATED TYPE i Q M 50E 2Y /E3Y-2H • Ic • VcEX • hFE Collector current. 50A Collector-emitter voltage.1000V

Contextual Info: mWEREX Powerex, inc., 200 Hiliis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KD421K15 Dual Darlington Transistor Module 150 Amperes/1000 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Sym bol K D 4 2 1K 15 Units

Contextual Info: BSS205N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=4.5 V 50 mΩ V GS=2.5 V 85 V DS • N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 2.5 ID A • Avalanche rated • Qualified according to AEC Q101

HLG09474

Contextual Info: BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 3.7 ID A • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv /dt rated

TERMINAL M4

Abstract: KS62121KHB TRANSISTOR L 287 A power transistor motor control kd62 powerex ks62
Contextual Info: m /m a x KS62121KHB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 High-Beta Single Darlington Transistor Module 1000 Amperes/1200 Volts Description: Powerex High-Beta Single Darlington Transistor Modules are designed for switching applica­

free transistor equivalent book

Abstract: transistor npn U8 dec npn U8 free all transistor equivalent book PBSS8110T PBSS9110T transistor ic equivalent book marking A 103 transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Jul 28 2003 Dec 22 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor