A 103 M TRANSISTOR Search Results

GKD transistor

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTC115GKPT SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE MARKING GKD Emitter .103 2.64 .086 (2.20)

CHDTA115GKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA115GKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA144GKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA144GKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA144TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA144TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA114GKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA114GKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA143TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA143TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA125TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA125TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTB143TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTB143TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 500 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA124GKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA124GKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE .103 2.64 .086 (2.20) .028 (0.70) .020 (0.50)

CHDTB123TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTB123TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 500 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA124TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA124TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA124GKPT

Abstract: high gain PNP POWER TRANSISTOR "SOT23"
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA124GKPT SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE .103 2.64 .086 (2.20) .028 (0.70) .020 (0.50)

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTD114GKPT SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 500 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA144GKPT

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA144GKPT SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTB114TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTB114TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 500 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA115TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA115TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA114TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA114TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

72 vna sot 23

Abstract: 73D2920 73D2910 2920 data flow manual fht 100 remote control code Un84 73D2950/2950T
Contextual Info: SSI 73D2950/2950T c m m s ä m V.29/V.27ter/V.22bis/V.22/V.21 /V.23, Bell 212A/103, MNP2-5, V.42/V.42bis, Low Power FAX/Data Modem Chip Set A TDK G ro u p/C o m p an y Advance Information December 1993 DESCRIPTION FEATURES The SSI 73D2950 modem chip set is capable of both

Contextual Info: PhlHps^Semiconductors_ M b b 5 3 H 31 0 0 313 3 H 314 H APX Product specification NPN 7 GHz wideband transistor BFG195 N AUER PHIL IPS/DISCRETE DESCRIPTION bHE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband

CP103

Abstract: 1.3 ts
Contextual Info: 1989963 C E N T R A L S E M I C O N D U C T O R 9 2 D 00341 de| te nanta □ □0 0 3 4 1 4 | ~ CP 103 SILICON NPN DARLINGTON POWER TRANSISTOR PROCESS: TOP SIDE METAL IZATI ON: BACK SIDE METAL IZATION: BASE BONDING PAD: EMITTER BONDING PAD: i ‘.v i r m GLASS PASSIVATED MESA

BFG51

Contextual Info: N AMER PHILIPS/DISCRETE bb53l31 Q017b7i 0 BFG51 H5E D J T - S I ~ I S~ P-N-P 2 GHz WIDEBAND TRANSISTOR •• » P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in CATV and M A TV systems, up to 2 GHz.

schematic diagram of KV J29 MF8

Abstract: protocol contact id sia transistor s131 RXE 045 SI2400 schematic diagram of aoc monitor ptc 75 SF64 microcontroller ISOmodem RPE MuRata
Contextual Info: Si2400 V. 2 2 B I S I S O M O D E M W I T H I N T E G R A T E D G L O B A L DA A Features ! ! ! ! Integrated DAA 2400 bps: V.22bis " Capacitive Isolation " 1200 bps: V.22, V.23, Bell 212A " Parallel Phone Detect " 300 bps: V.21, Bell 103 " Globally Compliant Line Interface

BFG90A

Abstract: BFG51 Q017b BFG90 SOT-103 SOT103 transistor BT 136
Contextual Info: N AMER PHILIPS/DISCRETE 25 E bt.53131 Q Q 1 7 t 7 Î D Q • BFG51 T *- 31- I S~ P-N-P 2 GHz W IDEBAND TRANSISTOR P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in C A T V and M A T V systems, up to 2 GHz.

mrcd

Abstract: transistor adaa schematic diagram of aoc monitor ARG64 protocol contact id sia RPE MuRata AN48 s8210 CTR21 Si2400
Contextual Info: Si2400 V. 22 B I S I S O M O D E M W I T H I N T E G R A T E D G L O B A L D A A Features Integrated DAA 2400 bps: V.22bis z Capacitive Isolation z 1200 bps: V.22, V.23, Bell 212A z Parallel Phone Detect z 300 bps: V.21, Bell 103 z Globally Compliant Line Interface