A 103 M TRANSISTOR Search Results

CHDTA115GKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA115GKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA144GKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA144GKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA144TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA144TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA114GKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA114GKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA143TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA143TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA125TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA125TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTB143TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTB143TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 500 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA124GKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA124GKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE .103 2.64 .086 (2.20) .028 (0.70) .020 (0.50)

CHDTB123TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTB123TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 500 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA124TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA124TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTB114TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTB114TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 500 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA115TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA115TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA114TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA114TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

72 vna sot 23

Abstract: 73D2920 73D2910 2920 data flow manual fht 100 remote control code Un84 73D2950/2950T
Contextual Info: SSI 73D2950/2950T c m m s ä m V.29/V.27ter/V.22bis/V.22/V.21 /V.23, Bell 212A/103, MNP2-5, V.42/V.42bis, Low Power FAX/Data Modem Chip Set A TDK G ro u p/C o m p an y Advance Information December 1993 DESCRIPTION FEATURES The SSI 73D2950 modem chip set is capable of both

BFG51

Contextual Info: N AMER PHILIPS/DISCRETE bb53l31 Q017b7i 0 BFG51 H5E D J T - S I ~ I S~ P-N-P 2 GHz WIDEBAND TRANSISTOR •• » P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in CATV and M A TV systems, up to 2 GHz.

schematic diagram of KV J29 MF8

Abstract: protocol contact id sia transistor s131 RXE 045 SI2400 schematic diagram of aoc monitor ptc 75 SF64 microcontroller ISOmodem RPE MuRata
Contextual Info: Si2400 V. 2 2 B I S I S O M O D E M W I T H I N T E G R A T E D G L O B A L DA A Features ! ! ! ! Integrated DAA 2400 bps: V.22bis " Capacitive Isolation " 1200 bps: V.22, V.23, Bell 212A " Parallel Phone Detect " 300 bps: V.21, Bell 103 " Globally Compliant Line Interface

mrcd

Abstract: transistor adaa schematic diagram of aoc monitor ARG64 protocol contact id sia RPE MuRata AN48 s8210 CTR21 Si2400
Contextual Info: Si2400 V. 22 B I S I S O M O D E M W I T H I N T E G R A T E D G L O B A L D A A Features Integrated DAA 2400 bps: V.22bis z Capacitive Isolation z 1200 bps: V.22, V.23, Bell 212A z Parallel Phone Detect z 300 bps: V.21, Bell 103 z Globally Compliant Line Interface

Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. *13 D • QSG433Ô a D G 3 b ì T 7 ~ Ì m ^ S E M IC O N D S / I C S 930 03616J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Monolithic Dual Devices ELECTRICAL CHARACTERISTICS at Tfl = 25°C lo ss

Contextual Info: A L LE GR O M I C R O S Y S T E M S 8 5 1 4 0 1 9 S P R A GU E. INC ^3 D • 0 S 0 M 3 3 Ô 0 0 0 3 S Ö 2 5 ■ AL 6R 93 D 0 3 5 8 2 'b'T-Z.^ZS S E M I C O N D S / ICS JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C

2T301

Abstract: 2SB121 2T302 sw-149 2T304 kc 103 p 2S131 2T303
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

UN5213

Abstract: UNR5210 UNR5211 UNR5212 UNR5213 UNR5214 UNR5215 UNR5216 UNR5217 UNR5218
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR521x Series (UN521x Series) Silicon NPN epitaxial planar type (0.425) Unit: mm For digital circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 M Di ain sc te

Contextual Info: SPRAGUE/S EM IC ON D GROUP 851 4019 SPRAGUE, ^ D • S E M I C O N D S / ICS 93D 03616J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Monolithic Dual Devices ELECTRICAL CHARACTERISTICS at TA = 25°C loss V gS[oH) Igss V BHJGSS Device Type 2N3954

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR521xG Series Silicon NPN epitaxial planar type For digital circuits • Package • Costs can be reduced through downsizing of the equipment and reduction of the number of parts

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR911xG Series Silicon PNP epitaxial planar type For digital circuits • Package • Code SSMini3-F3 • Pin Name 1: Base 2: Emitter 3: Collector M Di ain sc te