YTS39Q6 Search Results
YTS39Q6 Datasheets Context Search
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Contextual Info: TOSHIBA YTS39Q6 Transistor Unit in mm Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -50nA Max. , Ibev = 50nA (Max.) - @ VCE = -30V, VBE = -3V • Excellent DC Current Gain Linearity |
OCR Scan |
YTS39Q6 -50nA -50mA, YTS3904 |