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    STMicroelectronics

    STMicroelectronics STW5NB100

    N-CHANNEL 1000V-4OHM-4.3A-TO-247 POWERMESH MOSFET Power Field-Effect Transistor, 4.3A I(D), 1000V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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    ComSIT USA STW5NB100 323
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    W5NB100 Datasheets Context Search

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    W5NB100

    Abstract: STW5NB100 ISS 355
    Contextual Info: W5NB100  N - CHANNEL 1000V - 4Ω - 4.3A - TO-247 PowerMESH MOSFET PRELIMINARY DATA TYPE ST W5NB100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V < 4.4 Ω 4.3 A TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		STW5NB100 O-247 W5NB100 W5NB100 STW5NB100 ISS 355 PDF