PHN300
Abstract: PHN470
Contextual Info: Rectifier D iodes ~ S tu d & flat base types Type ^RRM Range I f AV ^ T"caSE ^F(RMS) @Tcase25°C IF @TcasE25°C I2t(2) 10ms ^FSM{1) 10ms ^FSM(2) 10ms VR«60% VR^10V (Note 2) (A) (Note 2) (A2s) (mA) (Note 1) (V) J-RRM V0 @ @ Tj Max. Tj Max. (Note 5) (V) (A) (°C)
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tcase25swxpcn012swxpcn020swxpcn030+7swxpcn040swxpcn055swxpcn075swxphn300swxhhn300phn300phn470
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TO48
Abstract: 28A-600 BTW 600 28A700R 28A800R
Contextual Info: tq 20, 30 and 40 ßs tq 2 0 ,3 0 et 40 fjs Fast turn off SCRs Thyristors rapides Case Type Boîtier Toper 'TSM l°C V RRM *T rms) ,1 Tease (A) (V) (Aeff) / <°C) tp 10 ms min max Vd r m (V) dv/dt •g t (mA) di/dt IA/ms) (V/ms) Tcase25 °C T 0 per m ax T o p e r ro e * T o p e r m a x
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28a-50028a-60028a-70028a-800+4to48btw 60028a700r28a800r
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5H10M-10
Abstract: diode F4c
Contextual Info: Data Sheet ALD30011 10KHz - 3G Hz Laser Driver MlhDIGICS Your GaAs IC Source R»v 1 FEATURES • On chip 180° phase splitter enables singleended input drive • Voltage controlled offset current 3mA to 80mA • Frequency response 10 KHz to 3 GHz • <2:1 Input VSWR 10 KHz to 3 GHz
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ald3001110khztcase-25tcaie-25+25h10m-10diode f4c
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3866S
Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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3866sbf247 equivalentbrochage des circuits integrestriac gk+6transistor bc 564bc547eti small signal fet cataloguebcw 91 transistorsescosescosem
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catalogue des transistors bipolaires de puissance
Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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catalogue des transistors bipolaires de puissancebrochage des circuits integresh3c1-07lb 124 transistor equivalente+6transistor a2222equivalent of transistor bc212 bc 214bfw-11 terminalssescosem transistorequivalente transistor bc 141brochage bcw91
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2N4091
Abstract: 2N4092 4093 N 2N4093 2N 4092 4093 4091 4092 2N 4091 2N4093A
Contextual Info: * 2 N FIELD-EFFECT TRANSISTOR, SILICON. N CHANNEL TRANSISTOR A EFFET DE CHAMP, SILIC IU M . C ANAL N 4 0 9 1 , A * 2 N 4 0 9 2 , A * 2 N 4 0 9 3 , A % Preferred device D is p o s itif recommandé Fast switching Commutation rapide Chopper 30 mA min. 2N 4091, A
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2n40912n40922n4093300/ii+74093 n2n 40924093409140922n 40912n4093a
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