TC58BYG0S3HBAI4 Search Results
TC58BYG0S3HBAI4 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TC58BYG0S3HBAI4 | Toshiba Memory America | Integrated Circuits (ICs) - Memory - 1GB SLC NAND BGA 24NM I TEMP (EE | Original | 2.21MB |
TC58BYG0S3HBAI4 Price and Stock
KIOXIA
KIOXIA TC58BYG0S3HBAI4IC FLASH 1GBIT PARALLEL 63TFBGA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TC58BYG0S3HBAI4 | Tray | 17 | 1 |
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TC58BYG0S3HBAI4 | Tray | 14 Weeks | 210 |
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TC58BYG0S3HBAI4 | 57 |
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TC58BYG0S3HBAI4 | 24 Weeks | 5,000 |
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TC58BYG0S3HBAI4 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TC58BYG0S3HBAI4Contextual Info: TC58BYG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BYG0S3HBAI4 is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. |
Original |
TC58BYG0S3HBAI4 TC58BYG0S3HBAI4 1024blocks. 2112-byte 2112-bytes 2012-10-01C |