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TA4205FC
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Toshiba
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Use for Voltage Controlled Oscillator(VCO). |
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MMSTA42
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Shenzhen Heketai Electronics Co Ltd
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NPN bipolar transistor in SOT-323 package with 300 V collector-base and collector-emitter voltage, 200 mA continuous collector current, low collector-emitter saturation voltage, and high breakdown voltage. |
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MMSTA42
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JCET Group
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NPN transistor in SOT-323 package with 300 V collector-base and collector-emitter voltage ratings, 0.2 A continuous collector current, high breakdown voltage, low saturation voltage, and DC current gain (hFE) up to 200. |
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MMBTA42
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SLKOR
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MMBTA42
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Shikues Semiconductor
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SOT-23 NPN transistor, high breakdown voltage, low collector-emitter saturation, complementary to MMBTA92. |
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MMBTA42
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AK Semiconductor
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MMBTA42 is an NPN transistor in SOT-23 package with 300 V collector-emitter voltage, 500 mA continuous collector current, and high DC current gain, suitable for general-purpose switching applications. |
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MMBTA42(RANGE:100-200)
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JCET Group
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MMBTA42 NPN transistor in SOT-23 package featuring 300 V collector-base and collector-emitter breakdown voltage, low collector-emitter saturation voltage of 0.2 V at 20 mA base current, DC current gain up to 200, and transition frequency of 50 MHz. |
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PZTA42
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Shikues Semiconductor
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NPN Silicon Planar Epitaxial Transistor, SOT-223, VCEO 300V, VCBO 300V, IC 500mA, Po 2W, Tj -55 to +150°C. |
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VBTA4250N
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VBsemi Electronics Co Ltd
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Dual P-Channel -20 V TrenchFET MOSFET with 0.65 ohm RDS(on) at VGS = -4.5 V, available in SC-75-6 package, designed for load switching and battery operated systems. |
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PZTA42
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JCET Group
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NPN transistor in SOT-223 package with 300 V collector-base and collector-emitter breakdown voltage, 1 W power dissipation, 0.2 A continuous collector current, and DC current gain up to 40 at 30 mA. |
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AD-PZTA42
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JCET Group
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NPN transistor in SOT-223 package with 300 V collector-base and collector-emitter voltage, 0.2 A continuous collector current, 1 W power dissipation, and AEC-Q101 qualified for high reliability applications. |
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MMBTA42
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Microdiode Semiconductor
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Plastic-Encapsulate Transistor, SOT-23, NPN, low collector-emitter saturation voltage, complementary to MMBTA92. |
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MMBTA42
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Shenzhen Heketai Electronics Co Ltd
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NPN bipolar transistor in SOT-23 package with 300 V collector-base and collector-emitter voltage, 300 mA continuous collector current, low collector-emitter saturation voltage, and DC current gain ranging from 60 to 200. |
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MMSTA42
