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    SIS415DNT Search Results

    SIS415DNT Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIS415DNT-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 35A 1212-8 Original PDF 8
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    SIS415DNT Price and Stock

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    Vishay Siliconix SIS415DNT-T1-GE3

    MOSFET P-CH 20V 35A PPAK1212-8
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    DigiKey () SIS415DNT-T1-GE3 Cut Tape 5,478 1
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    SIS415DNT-T1-GE3 Digi-Reel 5,478 1
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    SIS415DNT-T1-GE3 Reel 3,000 3,000
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    Vishay Intertechnologies SIS415DNT-T1-GE3

    P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIS415DNT-T1-GE3)
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    Avnet Americas SIS415DNT-T1-GE3 Reel 19 Weeks 3,000
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    Mouser Electronics SIS415DNT-T1-GE3 3,959
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    Verical () SIS415DNT-T1-GE3 1,528 123
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    SIS415DNT-T1-GE3 1,450 23
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    Arrow Electronics SIS415DNT-T1-GE3 Cut Strips 1,450 19 Weeks 1
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    Newark SIS415DNT-T1-GE3 Reel 3,000
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    Bristol Electronics SIS415DNT-T1-GE3 23,759 7
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    Quest Components () SIS415DNT-T1-GE3 19,007
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    SIS415DNT-T1-GE3 19,007
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    TTI SIS415DNT-T1-GE3 Reel 3,000
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    TME SIS415DNT-T1-GE3 1
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    Chip One Stop SIS415DNT-T1-GE3 Cut Tape 1,528 0 Weeks, 1 Days 5
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    EBV Elektronik SIS415DNT-T1-GE3 20 Weeks 3,000
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    Vishay Intertechnologies SIS415DNT-T1-GE3 (TRENCHFET GEN III)

    Mosfet, P-Ch, 20V, 35A, Powerpak 1212-8S Rohs Compliant: Yes |Vishay SIS415DNT-T1-GE3
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    Newark SIS415DNT-T1-GE3 (TRENCHFET GEN III) Cut Tape 1,677 1
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    SIS415DNT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiS415DNT Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES • TrenchFET Gen III P-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Max. - 20 ID (A) Qg (Typ.) a 0.0040 at VGS = - 10 V - 35 0.0055 at VGS = - 4.5 V - 35a 0.0095 at VGS = - 2.5 V


    Original     		SiS415DNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SPICE Device Model SiS415DNT www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS415DNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF