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    SIHFD024 Search Results

    SIHFD024 Functional Equivalents (4)

    The Functional Equivalents tab will give you options that are likely to match the same function of SIHFD024, but it may not fit your design.

    Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    Part Number Manufacturer Composite Price Description
    IRFD024 International Rectifier Check for Price Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    IRFD024 Vishay Siliconix Check for Price Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    IRFD024 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    IRFD024PBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

    SIHFD024 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRFD024

    Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature


    Original     		IRFD024, SiHFD024 2002/95/EC 11-Mar-11 IRFD024 PDF

    IRFD024

    Abstract: ls 2466
    Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature


    Original     		IRFD024, SiHFD024 2002/95/EC 18-Jul-08 IRFD024 ls 2466 PDF

    IRFD024

    Abstract: SiHFD024
    Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Available • For Automatic Insertion 0.10 RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature


    Original     		IRFD024, SiHFD024 18-Jul-08 IRFD024 PDF

    Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature


    Original     		IRFD024, SiHFD024 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRFD024

    Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Available • For Automatic Insertion 0.10 RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature


    Original     		IRFD024, SiHFD024 2002/95/EC 18-Jul-08 IRFD024 PDF

    Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature


    Original     		IRFD024, SiHFD024 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    AN609

    Abstract: IRFD024
    Contextual Info: IRFD024_RC, SiHFD024_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRFD024 SiHFD024 AN609, 5568m 2847m 0564m 3390m 25-Oct-10 AN609 PDF

    SiHFD024

    Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Available • For Automatic Insertion 0.10 RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature


    Original     		IRFD024, SiHFD024 12-Mar-07 PDF

    Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature


    Original     		IRFD024, SiHFD024 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    S10 diode

    Abstract: IRFD024 VISHAY MARKING S10
    Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature


    Original     		IRFD024, SiHFD024 2002/95/EC 11-Mar-11 S10 diode IRFD024 VISHAY MARKING S10 PDF