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    SI3417DV Search Results

    SI3417DV Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI3417DV-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 8A TSOP-6 Original PDF 11
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    SI3417DV Price and Stock

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    Vishay Siliconix SI3417DV-T1-GE3

    MOSFET P-CH 30V 8A 6TSOP
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    DigiKey () SI3417DV-T1-GE3 Cut Tape 12,181 1
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    SI3417DV-T1-GE3 Digi-Reel 12,181 1
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    SI3417DV-T1-GE3 Reel 12,000 3,000
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    New Advantage Corporation SI3417DV-T1-GE3 6,000 1
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    Vishay Intertechnologies SI3417DV-T1-GE3

    Power MOSFET, P Channel, 30 V, 8 A, 0.021 ohm, TSOP, Surface Mount - Tape and Reel (Alt: SI3417DV-T1-GE3)
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    Avnet Americas SI3417DV-T1-GE3 Reel 6,000 32 Weeks 3,000
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    Mouser Electronics SI3417DV-T1-GE3 20,635
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    Newark () SI3417DV-T1-GE3 Cut Tape 6,023 5
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    SI3417DV-T1-GE3 Reel 6,000
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    TTI SI3417DV-T1-GE3 Reel 6,000 3,000
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    TME SI3417DV-T1-GE3 1
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    Avnet Asia SI3417DV-T1-GE3 17 Weeks 6,000
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    Chip Stock SI3417DV-T1-GE3 33,580
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    EBV Elektronik SI3417DV-T1-GE3 33 Weeks 3,000
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    Maritex SI3417DV-T1-GE3 12,000 1
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    Others SI3417DV

    AVAILABLE EU
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    ComSIT USA SI3417DV 6,750
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    Vishay Huntington SI3417DV-T1-GE3

    MOSFET P-CH 30V 8A TSOP-6
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    Win Source Electronics SI3417DV-T1-GE3 30,080
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    SI3417DV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si3417DV Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)d,e 0.0252 at VGS = - 10 V -8 0.0360 at VGS = - 4.5 V -8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		Si3417DV Si3417DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SPICE Device Model Si3417DV www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		Si3417DV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF