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    SI1405 Search Results

    SI1405 Datasheets (9)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI1405BDH-T1-E3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 1.6A SOT363 Original PDF 1
    SI1405BDH-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 1.6A SC-70-6 Original PDF 11
    Si1405DL
    		Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF 69.75KB 4
    SI1405DL
    		Vishay Siliconix MOSFETs Original PDF 53.78KB 4
    SI1405DL-DS
    		Vishay Telefunken DS-Spice Model for Si1405DL Original PDF 267.79KB 3
    Si1405DL SPICE Device Model
    		Vishay P-Channel 1.8-V (G-S) MOSFET Original PDF 201.72KB 3
    SI1405DL-T1
    		Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF 69.75KB 4
    SI1405DL-T1-E3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 1.6A SC-70-6 Original PDF 9
    SI1405DL-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 1.6A SC-70-6 Original PDF 9
    SF Impression Pixel

    SI1405 Price and Stock

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    Vishay Intertechnologies SI1405DL-T1-E3

    MOSFET P-CH 8V 1.6A SC70-6
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    Vishay Intertechnologies SI1405BDH-T1-E3

    MOSFET P-CH 8V 1.6A SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI1405BDH-T1-E3 Tape & Reel 3,000
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    Vishay Intertechnologies SI1405DL-T1-GE3

    MOSFET P-CH 8V 1.6A SC70-6
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    Vishay Intertechnologies SI1405BDH-T1-GE3

    MOSFET P-CH 8V 1.6A SC70-6
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    DigiKey SI1405BDH-T1-GE3 Tape & Reel 3,000
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    Vishay Siliconix SI1405DL-T1-E3

    MOSFET, POWER, P-CH, VDSS -8V, RDS(ON) 0.1OHM, ID +/-1.6A, SC-70 (SOT-363),PD 0.568W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SI1405DL-T1-E3 Bulk 3,000
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    SI1405 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si1405DL

    Contextual Info: Si1405DL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.125 at VGS = - 4.5 V ± 1.8 0.160 at VGS = - 2.5 V ± 1.6 0.210 at VGS = - 1.8 V ± 1.4 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1405DL 2002/95/EC OT-363 SC-70 Si1405DL-T1-E3 Si1405DL-T1-GE3 18-Jul-08 PDF

    TB-17

    Contextual Info: New Product Si1405BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A)c 0.112 at VGS = - 4.5 V - 1.6 0.160 at VGS = - 2.5 V - 1.6 0.210 at VGS = - 1.8 V - 1.6 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS


    Original     		Si1405BDH OT-363 SC-70 Si1405BDH-T1-E3 08-Apr-05 TB-17 PDF

    74888

    Contextual Info: SPICE Device Model Si1405BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si1405BDH S-71490Rev. 23-Jul-07 74888 PDF

    sc 0645

    Contextual Info: Si1405BDH Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)c 0.112 at VGS = - 4.5 V - 1.6 0.160 at VGS = - 2.5 V - 1.6 0.210 at VGS = - 1.8 V - 1.6 Qg (Typ.) 3.67 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si1405BDH 2002/95/EC OT-363 SC-70 Si1405BDH-T1-E3 Si1405BDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. sc 0645 PDF

    AN609

    Contextual Info: Si1405BDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si1405BDH AN609 19-Dec-07 PDF

    Si1405DL

    Abstract: 71500 uA 072
    Contextual Info: SPICE Device Model Si1405DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si1405DL 24-Apr-04 71500 uA 072 PDF

    Contextual Info: Si1405BDH Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 ID (A)c RDS(on) (Ω) 0.112 at VGS = - 4.5 V - 1.6 0.160 at VGS = - 2.5 V - 1.6 0.210 at VGS = - 1.8 V - 1.6 Qg (Typ.) 3.67 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si1405BDH 2002/95/EC OT-363 SC-70 Si1405BDH-T1-E3 Si1405BDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    SI1405DL

    Contextual Info: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code


    Original     		Si1405DL OT-363 SC-70 S-99229--Rev. 08-Nov-99 PDF

    Si1405DL

    Abstract: 8 A diode A.4 SOT363 MARKING
    Contextual Info: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code


    Original     		Si1405DL OT-363 SC-70 S-01560--Rev. 17-Jul-00 8 A diode A.4 SOT363 MARKING PDF

    Contextual Info: Si1405DL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.125 at VGS = - 4.5 V ± 1.8 0.160 at VGS = - 2.5 V ± 1.6 0.210 at VGS = - 1.8 V ± 1.4 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1405DL 2002/95/EC OT-363 SC-70 Si1405DL-T1-E3 Si1405DL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Si1405DL

    Contextual Info: SPICE Device Model Si1405DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si1405DL 14-Oct-99 PDF

    71500

    Abstract: Si1405DL
    Contextual Info: SPICE Device Model Si1405DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si1405DL 18-Jul-08 71500 PDF

    74888

    Contextual Info: SPICE Device Model Si1405BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si1405BDH 18-Jul-08 74888 PDF

    Contextual Info: Si1405BDH Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)c 0.112 at VGS = - 4.5 V - 1.6 0.160 at VGS = - 2.5 V - 1.6 0.210 at VGS = - 1.8 V - 1.6 Qg (Typ.) 3.67 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si1405BDH 2002/95/EC OT-363 SC-70 Si1405BDH-T1-E3 Si1405BDH-T1-GE3 18-Jul-08 PDF

    Si1405DL

    Abstract: A4V4
    Contextual Info: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code


    Original     		Si1405DL OT-363 SC-70 A4V4 PDF

    Si1405DL

    Abstract: uA 072 71500
    Contextual Info: SPICE Device Model Si1405DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si1405DL S-50151Rev. 07-Feb-05 uA 072 71500 PDF

    SC70-6

    Abstract: Si1405DL Si1405DL-T1
    Contextual Info: Specification Comparison Vishay Siliconix Si1405BDH vs. Si1405DL Description: Package: Pin Out: P-Channel 1.8-V G-S MOSFET SC70-6 Identical Part Number Replacements Si1405BDH-T1-E3 Replaces Si1405DL-T1-E3 Si1405BDH-T1-E3 Replaces Si1405DL-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		Si1405BDH Si1405DL SC70-6 Si1405BDH-T1-E3 Si1405DL-T1-E3 Si1405DL-T1 SC70-6 PDF

    Contextual Info: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code


    Original     		Si1405DL OT-363 SC-70 08-Apr-05 PDF

    Si1405bdh

    Contextual Info: New Product Si1405BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A)c 0.112 at VGS = - 4.5 V - 1.6 0.160 at VGS = - 2.5 V - 1.6 0.210 at VGS = - 1.8 V - 1.6 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS


    Original     		Si1405BDH OT-363 SC-70 Si1405BDH-T1-E3 18-Jul-08 PDF

    Si1405DL

    Abstract: SOT363
    Contextual Info: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code


    Original     		Si1405DL OT-363 SC-70 18-Jul-08 SOT363 PDF

    4946

    Abstract: 4946 mosfet 4946 mosfet datasheet 1717 AN609 Si1405DL
    Contextual Info: Si1405DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si1405DL AN609 4563m 12-Mar-07 4946 4946 mosfet 4946 mosfet datasheet 1717 PDF

    Contextual Info: Si1405BDH Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)c 0.112 at VGS = - 4.5 V - 1.6 0.160 at VGS = - 2.5 V - 1.6 0.210 at VGS = - 1.8 V - 1.6 Qg (Typ.) 3.67 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si1405BDH 2002/95/EC OT-363 SC-70 Si1405BDH-T1-E3 Si1405BDH-T1-GE3 11-Mar-11 PDF

    marking code 18 6pin

    Contextual Info: Si1405DL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.125 at VGS = - 4.5 V ± 1.8 0.160 at VGS = - 2.5 V ± 1.6 0.210 at VGS = - 1.8 V ± 1.4 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1405DL 2002/95/EC OT-363 SC-70 Si1405DL-T1-E3 Si1405DL-T1-GE3 11-Mar-11 marking code 18 6pin PDF

    Contextual Info: Si1405BDH Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)c 0.112 at VGS = - 4.5 V - 1.6 0.160 at VGS = - 2.5 V - 1.6 0.210 at VGS = - 1.8 V - 1.6 Qg (Typ.) 3.67 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si1405BDH 2002/95/EC OT-363 SC-70 Si1405BDH-T1-E3 Si1405BDH-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF