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    STP9NB65 Search Results

    STP9NB65 Functional Equivalents (5)

    The Functional Equivalents tab will give you options that are likely to match the same function of STP9NB65, but it may not fit your design.

    Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    Part Number Manufacturer Composite Price Description
    FQP10N60C_NL Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    AP09N70P-A Advanced Power Electronics Corp Check for Price Power Field-Effect Transistor, 9A I(D), 650V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    AP09N70P-A-HF Advanced Power Electronics Corp Check for Price Power Field-Effect Transistor, 9A I(D), 650V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    SSP10N60AJ69Z Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    AP09N70R Advanced Power Electronics Corp Check for Price Power Field-Effect Transistor, 9A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

    STP9NB65 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: s = 7 SGS-THOMSON ^7# Kl gKLiM(s iO(gS STP9NB65 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE STP9NB 65 V dss RDS(on) Id 650 V < 0 .7 5 Q 9A . TYPICAL R DS(on) = 0.62 Q m EXTREMELY HIGH dv/dt CAPABILITY . . . . 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


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    STP9NB65 PDF