SSM6J414TU Search Results
SSM6J414TU Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| SSM6J414TU |
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SSM6J414 - TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal | Original | 220.51KB | 9 | ||
| SSM6J414TU,LF |
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FETs - Single, Discrete Semiconductor Products, MOSFET P CH 20V 6A UF6 | Original | 9 |
SSM6J414TU Price and Stock
Toshiba America Electronic Components SSM6J414TU,LFMOSFET P CH 20V 6A UF6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SSM6J414TU,LF | Digi-Reel | 4,177 | 1 |
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SSM6J414TU,LF | Reel | 16 Weeks | 3,000 |
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SSM6J414TU,LF | 3,135 |
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Toshiba America Electronic Components SSM6J414TU,LF(BSSM6J414TU,LF(B |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SSM6J414TU,LF(B | 11,200 | 254 |
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SSM6J414TU,LF(B | 8,960 |
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Toshiba America Electronic Components SSM6J414TU,LF(TTrans MOSFET P-CH Si 20V 6A 6-Pin UF T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SSM6J414TU,LF(T | 3,612 | 200 |
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SSM6J414TU,LF(T | Cut Tape | 2,980 | 5 |
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SSM6J414TU,LF(T | Cut Tape | 3,612 | 0 Weeks, 1 Days | 5 |
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SSM6J414TU Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SSM6J414TUContextual Info: SSM6J414TU MOSFETs Silicon P-Channel MOS U-MOS SSM6J414TU 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 54 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 36 mΩ (max) (@VGS = -1.8 V) |
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SSM6J414TU SSM6J414TU | |
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Contextual Info: SSM6J414TU MOSFETs Silicon P-Channel MOS U-MOS SSM6J414TU 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 54 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 36 mΩ (max) (@VGS = -1.8 V) |
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SSM6J414TU | |
SSM6J414TUContextual Info: SSM6J414TU MOSFETs Silicon P-Channel MOS U-MOS SSM6J414TU 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 54 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 36 mΩ (max) (@VGS = -1.8 V) |
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SSM6J414TU SSM6J414TU | |
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Contextual Info: SSM6J414TU MOSFETs Silicon P-Channel MOS U-MOS SSM6J414TU 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 54 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 36 mΩ (max) (@VGS = -1.8 V) |
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SSM6J414TU | |
toshiba laptop charging CIRCUIT diagram
Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
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BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120 | |
TK12A10K3
Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
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