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    SPN2302 Search Results

    SPN2302 Datasheets (4)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SPN2302
    		SYNC Power N-Channel Enhancement Mode MOSFET Original PDF 215.62KB 8
    SPN2302A
    		SYNC Power N-Channel Enhancement Mode MOSFET Original PDF 208.37KB 8
    SPN2302AS23RG
    		SYNC Power N-Channel Enhancement Mode MOSFET Original PDF 208.37KB 8
    SPN2302S23RG
    		SYNC Power N-Channel Enhancement Mode MOSFET Original PDF 215.62KB 8

    SPN2302 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SPN2302

    Abstract: SPN2302S23RG
    Contextual Info: SPN2302 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPN2302 SPN2302 SPN2302S23RG PDF

    SPN2302A

    Abstract: MOSFET SPN2302AS23RGB SPN2302AS23RG
    Contextual Info: SPN2302A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPN2302A SPN2302A MOSFET SPN2302AS23RGB SPN2302AS23RG PDF

    SPN2302

    Abstract: MOSFET SPN2302S23RG sot 26 N-Channel MOSFET
    Contextual Info: SPN2302 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPN2302 SPN2302 MOSFET SPN2302S23RG sot 26 N-Channel MOSFET PDF

    SPN2302AS23RG

    Abstract: SPN2302A
    Contextual Info: SPN2302A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPN2302A SPN2302A SPN2302AS23RG PDF

    SPN2302DS23RG

    Abstract: marking 6A SOT 23 sot-23 MOSFET Marking code 6A mosfet vgs 5v SOT23 marking 31A sot-23
    Contextual Info: SPN2302D N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		SPN2302D SPN2302D SPN2302DS23RG marking 6A SOT 23 sot-23 MOSFET Marking code 6A mosfet vgs 5v SOT23 marking 31A sot-23 PDF

    SPN2302DS23RG

    Contextual Info: SPN2302D N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		SPN2302D SPN2302D SPN2302DS23RG PDF

    SPN2302

    Abstract: SPN2302S23RG
    Contextual Info: SPN2302 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPN2302 SPN2302 SPN2302S23RG PDF