SPD025980 |
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Luxo
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Optical Inspection Equipment - Accessories - SP SUCTION LENS 4D |
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Original |
PDF
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SPD026586 |
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Luxo
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Optical Inspection Equipment - Accessories - HANDLE WHITE |
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Original |
PDF
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SPD026587 |
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Luxo
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Optical Inspection Equipment - Accessories - HANDLE LT GRAY |
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Original |
PDF
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SPD026588 |
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Luxo
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Optical Inspection Equipment - Accessories - HANDLE BLACK |
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Original |
PDF
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SPD02N50C3 |
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Infineon Technologies
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Cool MOS Power Transistor |
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Original |
PDF
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SPD02N50C3BTMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY |
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Original |
PDF
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SPD02N60 |
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Siemens
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|
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Original |
PDF
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SPD02N60 |
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Siemens
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SIPMO Power Transistor |
|
Original |
PDF
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SPD02N60 |
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Toshiba
|
Power MOSFETs Cross Reference Guide |
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Original |
PDF
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SPD02N60C3 |
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Infineon Technologies
|
CoolMOS Power MOSFET, 600V, DPAK, RDSon=3.00 ?, 1.8A |
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Original |
PDF
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SPD02N60C3 |
|
Infineon Technologies
|
Cool MOS Power Transistor |
|
Original |
PDF
|
SPD02N60C3 |
|
Infineon Technologies
|
Cool MOS Power Transistor |
|
Original |
PDF
|
SPD02N60C3BTMA1 |
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Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 1.8A DPAK |
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Original |
PDF
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SPD02N60S5 |
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Infineon Technologies
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N-Channel MOSFETs (>500V - 900V); Package: PG-TO252-3; VDS (max): 600.0 V; Package: DPAK (TO-252); RDS(ON) @ TJ=25°C VGS=10: 3,000.0 mOhm; ID(max) @ TC=25°C: 1.8 A; IDpuls (max): 3.2 A; |
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Original |
PDF
|
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SPD02N60S5 |
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Infineon Technologies
|
Cool MOS Power Transistor |
|
Original |
PDF
|
SPD02N60S5 |
|
Infineon Technologies
|
Cool MOS Power Transistor |
|
Original |
PDF
|
SPD02N60S5 |
|
Toshiba
|
Power MOSFETs Cross Reference Guide |
|
Original |
PDF
|
SPD02N60S5BTMA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 1.8A TO-252 |
|
Original |
PDF
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SPD02N80C3 |
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Infineon Technologies
|
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... |
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Original |
PDF
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SPD02N80C3 |
|
Infineon Technologies
|
N-Channel MOSFETs (>500V - 900V); Package: PG-TO252-3; VDS (max): 800.0 V; Package: DPAK (TO-252); RDS(ON) @ TJ=25°C VGS=10: 2,700.0 mOhm; ID(max) @ TC=25°C: 2.0 A; IDpuls (max): 6.0 A; |
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Original |
PDF
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