SPB07N60C3 |
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Infineon Technologies
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N-Channel MOSFETs (>500V - 900V); Package: PG-TO263-3; VDS (max): 600.0 V; Package: D2PAK (TO-263); RDS(ON) @ TJ=25°C VGS=10: 600.0 mOhm; ID(max) @ TC=25°C: 7.3 A; IDpuls (max): 21.9 A; |
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SPB07N60C3 |
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Infineon Technologies
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Cool MOS Power Transistor |
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Original |
PDF
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SPB07N60C3 |
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Infineon Technologies
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Cool MOS Power Transistor |
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Original |
PDF
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SPB07N60C3 |
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Infineon Technologies
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Cool MOS Power Transistor |
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Original |
PDF
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SPB07N60C3ATMA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 7.3A D2PAK |
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SPB07N60C3 SMD |
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Infineon Technologies
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CoolMOS Power MOSFET, 600V, D2PAK, RDSon=0.60 ?, 7.3A |
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