SMOS683E Search Results

TMS626162

Contextual Info: TMS626162 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS683E – FEBRUARY 1995 – REVISED APRIL 1997 D D D D D D D D D D D D D D D D Organization . . . 512K x 16 × 2 Banks 3.3-V Power Supply ± 10% Tolerance Two Banks for On-Chip Interleaving

1995 AND sdram AND

Contextual Info: TMS626162 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS683E - FEBRUARY 1995 - REVISED APRIL 1997 Organization . . . 512K x 16 x 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses) DGE PACKAGE

DQ85

Contextual Info: ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM I I I I I I Multichip Module - H eatures 6 Low Power Texas Instruments 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCM User Configureable as "2" Independent 512K X 48 X 2 Banks High-Speed, Low-Noise, Low-Voltage TTL LVTTL

3CK2C

Abstract: Sth-56
Contextual Info: TMS626162 524288-WORD BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY • • • • • • • Organization . . . 512K x 16 x 2 Banks 3.3-V Power Supply ± 10% Tolerance Two Banks for On-Chip Interleaving

Contextual Info: ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM I I I I I I Multichip Module H—H -eatures 6 Low Power Texas Instruments 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCM User Configureable as "2" Independent 512K X 48 X 2 Banks High-Speed, Low-Noise, Low-Voltage TTL LVTTL

diode ba10 equivalents

Abstract: ACT-D1M96S
Contextual Info: ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module Features • ■ ■ ■ ■ ■ ■ ■ 6 Low Power Texas Instruments 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCM User Configureable as "2" Independent 512K X 48 X 2