SIGC156T120R2CL Search Results

SIGC156T120R2CL Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIGC156T120R2CL		Infineon Technologies	IGBT Chip in NPT-Technology	Original	PDF	71.01KB	4
SIGC156T120R2CL		Infineon Technologies	SIGC156T120R2CL, 1200V, 100A	Original	PDF	69.48KB	4

SIGC156T120R2CL Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SIGC156T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE This chip is used for: • power module	Original	SIGC156T120R2CL BSM100GD120DLC SIGC156T120R2CL Q67041A4663-A003 7181-P,	PDF
BSM100GD120DLC Contextual Info: SIGC156T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE This chip is used for: • power module	Original	SIGC156T120R2CL BSM100GD120DLC Q67041A4663-A003 SIGC156T120R2CL 7181-P,	PDF
BSM100GD120DLC Abstract: SIGC156T120R2CL Contextual Info: Preliminary SIGC156T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE This chip is used for: • power module	Original	SIGC156T120R2CL BSM100GD120DLC SIGC156T120R2CL Q67041A4663-A003 7181-P, BSM100GD120DLC	PDF
BSM100GD120DLC Abstract: SIGC156T120R2CL Contextual Info: Preliminary SIGC156T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE This chip is used for: • power module	Original	SIGC156T120R2CL BSM100GD120DLC SIGC156T120R2CL Q67041sawn A4663-A003 7181-P, BSM100GD120DLC	PDF