| SGB02N120 |  | Infineon Technologies | IGBT Discretes; Package: PG-TO263-3; Switching Frequency: Fast IGBT 10-40 kHz; Package: D2PAK (TO-263); VCE (max): 1,200.0 V; IC(max) @ 25°: 6.2 A; IC(max) @ 100°: 2.8 A | Original | PDF | 439.81KB | 11 | 
| SGB02N120 |  | Infineon Technologies | 2A 1200V TO263AB SMD IGBT | Original | PDF | 392.15KB | 12 | 
| SGB02N120 |  | Infineon Technologies | Fast IGBT in NPT-Technology | Original | PDF | 330.9KB | 13 | 
| SGB02N120 |  | Infineon Technologies | Fast S-IGBT in NPT-Technology | Scan | PDF | 561.29KB | 10 | 
| SGB02N120ATMA1 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 6.2A 62W TO263-3 | Original | PDF | 436.68KB |  | 
| SGB02N120CT |  | Infineon Technologies | IGBT, 2A, 1200V, N-CHANNEL | Original | PDF | 446.27KB |  |