SEMIX604GAL12E4S Search Results
SEMIX604GAL12E4S Price and Stock
| SEMIKRON SEMIX604GAL12E4SIgbt Module, Single, 1.2Kv, 916A; Continuous Collector Current:916A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX604GAL12E4S | |||||||||||
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| SEMIKRON SEMIX604GAL12E4S 27890154Module: IGBT; diode/transistor; boost chopper,thermistor; screw | |||||||||||
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SEMIX604GAL12E4S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| SEMiX604GAL12E4S
Abstract: C529A SEMIX604GA 
 | Original | SEMiX604GAL12E4s E63532 SEMiX604GAL12E4S C529A SEMIX604GA | |
| Contextual Info: SEMiX604GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMiX 4s Trench IGBT Modules SEMiX604GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V | Original | SEMiX604GAL12E4s E63532 | |
| Contextual Info: SEMiX604GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMiX 4s Trench IGBT Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C | Original | SEMiX604GAL12E4s E63532 |